摘要:
A thin film multi-layer wiring substrate comprising a plurality of wiring layers, each adjacent pair of wiring layers being separated by an insulating layer, wherein at least one of the wiring layers includes wiring formed by an inner conductor member and a conductor layer surrounding the periphery thereof through an insulating material.
摘要:
A semiconductor substrate is secured by suction to a rear face of a supporting face of a substrate supporting table. In this event, the thickness of the semiconductor substrate is made fixed by planarization on the rear face, and the rear face is forcibly brought into a state free from undulation by the suction to the supporting face, so that the rear face becomes a reference face for planarization of a front face. In this state, a tool is used to cut surface layers of Au projections and a resist mask on the front face, thereby planarizing the Au projections and the resist mask so that their surfaces become continuously flat. This can planarize the surfaces of fine bumps formed on the substrate at a low cost and a high speed in place of CMP.
摘要:
The present invention realizes a semiconductor device of high reliability which allows metal terminals which have a uniform height, are flat and smooth to be formed under low load and at low costs and to be mounted with low damage. The electrodes 5 and the insulating film 6 are both formed of materials having the property that they are solid and do not exhibit the adhesiveness at room temperature and exhibit the adhesiveness at a temperature not lower than a first temperature and cure at a temperature not lower than a second temperature higher than the first temperature. The surfaces of the electrodes 5 and the insulating film 6 of a semiconductor chip 1a are planarized in continuously flat with a hard cutting tool, as of diamond or others.
摘要:
The present invention realizes a semiconductor device of high reliability which allows metal terminals which have a uniform height, are flat and smooth to be formed under low load and at low costs and to be mounted with low damage. The electrodes 5 and the insulating film 6 are both formed of materials having the property that they are solid and do not exhibit the adhesiveness at room temperature and exhibit the adhesiveness at a temperature not lower than a first temperature and cure at a temperature not lower than a second temperature higher than the first temperature. The surfaces of the electrodes 5 and the insulating film 6 of a semiconductor chip 1a are planarized in continuously flat with a hard cutting tool, as of diamond or others.
摘要:
The present invention realizes a semiconductor device of high reliability which allows metal terminals which have a uniform height, are flat and smooth to be formed under low load and at low costs and to be mounted with low damage. The electrodes 5 and the insulating film 6 are both formed of materials having the property that they are solid and do not exhibit the adhesiveness at room temperature and exhibit the adhesiveness at a temperature not lower than a first temperature and cure at a temperature not lower than a second temperature higher than the first temperature. The surfaces of the electrodes 5 and the insulating film 6 of a semiconductor chip 1a are planarized in continuously flat with a hard cutting tool, as of diamond or others.
摘要:
The present invention realizes a semiconductor device of high reliability which allows metal terminals which have a uniform height, are flat and smooth to be formed under low load and at low costs and to be mounted with low damage. The electrodes 5 and the insulating film 6 are both formed of materials having the property that they are solid and do not exhibit the adhesiveness at room temperature and exhibit the adhesiveness at a temperature not lower than a first temperature and cure at a temperature not lower than a second temperature higher than the first temperature. The surfaces of the electrodes 5 and the insulating film 6 of a semiconductor chip 1a are planarized in continuously flat with a hard cutting tool, as of diamond or others.
摘要:
A manufacturing method of a circuit board includes the steps of: forming projecting electrodes on a substrate; forming a photosensitive resin film on the substrate so as to cover the projecting electrodes; exposing a substantially entire surface of the photosensitive film; and melting the surface of the photosensitive film so as to expose the projecting electrodes.
摘要:
A method of manufacturing an electronic component includes forming a resin layer over an underlying layer, pressing a conductor plate including a pattern formed on one major surface thereof against the resin layer, and embedding the pattern in the resin layer, and performing polishing, Chemical Mechanical Polishing, or cutting by the use of a diamond bit on another major surface of the conductor plate until the resin layer appears, and leaving the pattern in the resin layer as a conductor pattern.
摘要:
The interposer comprises a base 8 formed of a plurality of resin layers 68, 20, 32, 48; thin-film capacitors 18a, 18b buried between a first resin layer 68 of said plurality of resin layers and a second resin layer 20 of said plurality of resin layers, which include first capacitor electrodes 12a, 12b, second capacitor electrodes 16 opposed to the first capacitor electrode 12a, 12b and the second capacitor electrode 16, and a capacitor dielectric film 14 of a relative dielectric constant of 200 or above formed between the first capacitor electrode 12a, 12b and the second capacitor electrode 16; a first through-electrode 77a formed through the base 8 and electrically connected to the first capacitor electrode 12a, 12b; and a second through-electrode 77b formed through the base 8 and electrically connected to the second capacitor electrode 16.
摘要:
The present invention realizes a semiconductor device of high reliability which allows metal terminals which have a uniform height, are flat and smooth to be formed under low load and at low costs and to be mounted with low damage. The electrodes 5 and the insulating film 6 are both formed of materials having the property that they are solid and do not exhibit the adhesiveness at room temperature and exhibit the adhesiveness at a temperature not lower than a first temperature and cure at a temperature not lower than a second temperature higher than the first temperature. The surfaces of the electrodes 5 and the insulating film 6 of a semiconductor chip 1a are planarized in continuously flat with a hard cutting tool, as of diamond or others.