公开(公告)号：US5821622A

公开(公告)日：1998-10-13

申请号：US633346

申请日：1996-04-17

申请人： Yoshiko Tsuji ,  Mitsushi Ikeda ,  Hisao Toeda ,  Yoshifumi Ogawa ,  Toshiyuki Oka

发明人： Yoshiko Tsuji ,  Mitsushi Ikeda ,  Hisao Toeda ,  Yoshifumi Ogawa ,  Toshiyuki Oka

IPC分类号： G02F1/136 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L29/4908 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/458 ,  G02F2001/136295 ,  H01L2924/0002

摘要： The present invention provides a liquid crystal display device including a plurality of address wiring lines formed of an Mo--W alloy, a plurality of data wiring lines intersecting the address wiring lines, with insulating films interposed at intersection portions of the data wiring lines and the address wiring lines, display regions having pixel electrodes arranged respectively for the intersection portions, and a plurality of switching elements provided adjacent to the intersection portions and having control electrodes connected electrically to the address wiring lines, first main electrodes connected electrically to the data wiring liens, and second main electrodes connected electrically to the pixel electrodes.

摘要翻译： 本发明提供一种液晶显示装置，包括由Mo-W合金形成的多条地址布线，与地址布线相交的多条数据布线，绝缘膜夹在数据布线和 地址布线，具有分别为交叉部分布置的像素电极的显示区域以及与该交点相邻设置的多个开关元件，并具有与地址布线电连接的控制电极，与数据布线留置片电连接的第一主电极 和与像素电极电连接的第二主电极。

公开(公告)号：US5738948A

公开(公告)日：1998-04-14

申请号：US536608

申请日：1995-09-29

申请人： Mitsushi Ikeda ,  Yoshiko Tsuji ,  Yujiro Hara ,  Masaki Atsuta ,  Yoshifumi Ogawa ,  Toshiyuki Oka ,  Momoko Takemura

发明人： Mitsushi Ikeda ,  Yoshiko Tsuji ,  Yujiro Hara ,  Masaki Atsuta ,  Yoshifumi Ogawa ,  Toshiyuki Oka ,  Momoko Takemura

IPC分类号： G02F1/1362 ,  G02F1/1343 ,  C22C27/04

CPC分类号： G02F1/136286 ,  Y10T428/12826 ,  Y10T428/1284

摘要： The present invention discloses an electrode wiring material including at least one main element selected from the group consisting of Mo and W and an additional element selected from the group consisting of Kr and Xe in an amount of 0.0003 atomic % to 3 atomic %. The present invention further discloses an electrode wiring substrate including an electrode wiring formed on a glass substrate, wherein the electrode wiring is formed of at least one metal selected from the group consisting of Mo and W and the lattice constant of the electrode wiring material is almost equal to the lattice constant of the electrode wiring material in a bulk state.

摘要翻译： 本发明公开了一种电极配线材料，其包含选自Mo和W中的至少一种主要元素和选自Kr3和Xe的另外的元素，其量为0.0003原子％至3原子％。 本发明还公开了一种电极布线基板，其包括在玻璃基板上形成的电极布线，其中，所述电极布线由选自Mo和W中的至少一种金属形成，并且所述电极布线材料的晶格常数几乎为 等于电极布线材料在大部分状态下的晶格常数。

公开(公告)号：US5600461A

公开(公告)日：1997-02-04

申请号：US490538

申请日：1995-06-14

申请人： Tomomasa Ueda ,  Masahiko Akiyama ,  Atsushi Sugahara ,  Makoto Shibusawa ,  Mitsushi Ikeda ,  Yoshiko Tsuji ,  Hisao Toeda

发明人： Tomomasa Ueda ,  Masahiko Akiyama ,  Atsushi Sugahara ,  Makoto Shibusawa ,  Mitsushi Ikeda ,  Yoshiko Tsuji ,  Hisao Toeda

IPC分类号： G02F1/1335 ,  G02F1/1362 ,  G02F1/1343

CPC分类号： G02F1/136213 ,  G02F1/133512 ,  G02F1/136204 ,  G02F2001/136218

摘要： An active matrix type liquid crystal display device having an array substrate for allowing parasitic capacitances formed between a pixel electrode and scan and signal lines disposed in the vicinity thereof to be remarkably decreased. An active matrix type liquid crystal display device is disclosed, which comprises a plurality of scan lines, a plurality of signal lines intersected with the plurality of scan lines, the plurality of scan lines being insulated from the plurality of signal lines, a thin film transistor element having a gate portion and a drain portion and disposed at each intersection of the plurality of scan lines and the plurality of signal lines, the gate portion being connected to a scan line at the intersection, the drain portion being connected to a signal line at the intersection, an array substrate formed in the intersection and having a pixel electrode, the pixel electrode being electrically connected to the source portion of the thin film transistor element, an opposite substrate having an opposite electrode opposed to the array substrate, a liquid crystal layer disposed between the array substrate and the opposite substrate, and a shield electrode disposed on the array substrate, the shield electrode being overlaid through an insulation layer with at least part of the pixel electrode and with at least part of at least either the scan line or signal line.

摘要翻译： 具有用于允许在像素电极和扫描之间形成的寄生电容的阵列基板的有源矩阵型液晶显示装置显着地减少。 公开了一种有源矩阵型液晶显示装置，其包括多条扫描线，与多条扫描线相交的多条信号线，多条扫描线与多条信号线绝缘，薄膜晶体管 元件，其具有栅极部分和漏极部分，并且设置在所述多条扫描线和所述多条信号线的每个交叉点处，所述栅极部分在交叉点处连接到扫描线，所述漏极部分连接到信号线 所述交点是形成在所述交点中并具有像素电极的阵列基板，所述像素电极电连接到所述薄膜晶体管元件的源极部分，具有与所述阵列基板相对的相对电极的相对基板，液晶层 设置在阵列基板和相对基板之间，以及设置在阵列基板上的屏蔽电极，屏蔽体e 导电层通过具有至少一部分像素电极的绝缘层和至少部分扫描线或信号线的至少一部分覆盖。

公开(公告)号：US5459596A

公开(公告)日：1995-10-17

申请号：US38989

申请日：1993-03-29

申请人： Tomomasa Ueda ,  Masahiko Akiyama ,  Atsushi Sugahara ,  Makoto Shibusawa ,  Mitsushi Ikeda ,  Yoshiko Tsuji ,  Hisao Toeda

发明人： Tomomasa Ueda ,  Masahiko Akiyama ,  Atsushi Sugahara ,  Makoto Shibusawa ,  Mitsushi Ikeda ,  Yoshiko Tsuji ,  Hisao Toeda

IPC分类号： G02F1/1335 ,  G02F1/1362 ,  G02F1/1343

CPC分类号： G02F1/136213 ,  G02F1/133512 ,  G02F1/136204 ,  G02F2001/136218

摘要： An active matrix type liquid crystal display device having a plurality of scan lines, a plurality of signal lines intersected with the plurality of scan lines, the plurality of scan lines being insulated from the plurality of signal lines, a thin film transistor element having a gate portion and a drain portion and disposed at each intersection of the plurality of scan lines and the plurality of signal lines, the gate portion being connected to a scan line at the intersection, the drain portion being connected to a signal line at the intersection, an array substrate formed in the intersection and having a pixel electrode, the pixel electrode being electrically connected to the source portion of the thin film transistor element, an opposite substrate having an opposite electrode opposed to the array substrate, a liquid crystal layer disposed between the array substrate and the opposite substrate, and a shield electrode disposed on the array substrate, the shield electrode being overlaid through an insulation layer with at least part of the pixel electrode and with at least part of at least either the scan line or signal line.

摘要翻译： 一种有源矩阵型液晶显示装置，具有多条扫描线，与多条扫描线相交的多条信号线，多条扫描线与多条信号线绝缘，具有栅极的薄膜晶体管元件 部分和漏极部分，并且设置在多个扫描线和多条信号线的每个交叉点处，栅极部分在交叉点处连接到扫描线，漏极部分连接到交叉点处的信号线， 阵列基板，形成在交叉点并具有像素电极，像素电极电连接到薄膜晶体管元件的源极部分，具有与阵列基板相对的相对电极的相对基板，配置在阵列之间的液晶层 基板和相对基板，以及设置在阵列基板上的屏蔽电极，覆盖屏蔽电极 通过具有至少一部分像素电极并且至少部分扫描线或信号线的至少一部分的绝缘层。

公开(公告)号：US06200694B1

公开(公告)日：2001-03-13

申请号：US09203678

申请日：1998-12-01

申请人： Yasuo Kohsaka ,  Yoshiharu Fukasawa ,  Yoshiko Tsuji ,  Mitsushi Ikeda ,  Michio Sato ,  Toshihiro Maki

发明人： Yasuo Kohsaka ,  Yoshiharu Fukasawa ,  Yoshiko Tsuji ,  Mitsushi Ikeda ,  Michio Sato ,  Toshihiro Maki

IPC分类号： H01L2978

CPC分类号： H01L28/60 ,  B22F1/0003 ,  C22C27/04 ,  C23C14/3414 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L21/76838 ,  H01L23/53257 ,  H01L2924/0002 ,  Y10T428/12014 ,  Y10T428/12826 ,  Y10T428/1284 ,  Y10T428/2951 ,  H01L2924/00

摘要： A Mo—W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo—W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo—W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo—W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo—W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo—W wiring thin film to be produced with high repeatability.

摘要翻译： 公开了用于形成布线的Mo-W材料，其一体地观察到包含20-95％的钨，余量为钼和不可避免的杂质的原子百分数。 用于配线的Mo-W材料是通过粉末冶金技术或冶炼技术将Mo材料和W材料混合并整合得到的产品，或通过将所述材料以所述百分比组成计算的量排列得到的产品 以上。 含有20〜95％范围内的W的Mo-W材料表现出低电阻，同时在蚀刻剂的可加工性和耐受性方面优异。 将由该百分比组成的Mo-W合金形成的布线薄膜用作液晶显示装置的地址布线等。 用于形成配线的Mo-W靶由原子百分数20〜95％的钨和余量的钼和不可避免的杂质构成，能够以高重复性制造Mo-W布线薄膜。

公开(公告)号：US07153589B1

公开(公告)日：2006-12-26

申请号：US09165743

申请日：1998-10-06

申请人： Yasuo Kohsaka ,  Yoshiharu Fukasawa ,  Yoshiko Tsuji ,  Mitsushi Ikeda ,  Michio Sato ,  Toshihiro Maki

发明人： Yasuo Kohsaka ,  Yoshiharu Fukasawa ,  Yoshiko Tsuji ,  Mitsushi Ikeda ,  Michio Sato ,  Toshihiro Maki

IPC分类号： B12F3/00

CPC分类号： H01L28/60 ,  B22F1/0003 ,  C22C27/04 ,  H01L21/76838 ,  H01L23/53257 ,  H01L2924/0002 ,  Y10T428/12014 ,  Y10T428/2951 ,  H01L2924/00

摘要： A Mo—W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo—W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo—W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo—W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo—W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo—W wiring thin film to be produced with high repeatability.

摘要翻译： 公开了用于形成布线的Mo-W材料，其一体地观察到包含20-95％的钨，余量为钼和不可避免的杂质的原子百分数。 用于配线的Mo-W材料是通过粉末冶金技术或冶炼技术将Mo材料和W材料混合并整合得到的产品，或通过将所述材料以所述百分比组成计算的量排列得到的产品 以上。 含有20〜95％范围内的W的Mo-W材料表现出低电阻，同时在蚀刻剂的可加工性和耐受性方面优异。 将由该百分比组成的Mo-W合金形成的布线薄膜用作液晶显示装置的地址布线等。 用于形成配线的Mo-W靶由原子百分数20〜95％的钨和余量的钼和不可避免的杂质构成，能够以高重复性制造Mo-W布线薄膜。

公开(公告)号：US5706064A

公开(公告)日：1998-01-06

申请号：US623712

申请日：1996-03-29

申请人： Yoko Fukunaga ,  Yoshiko Tsuji ,  Mitsushi Ikeda ,  Masaru Nikaido ,  Shoichi Kurauchi

发明人： Yoko Fukunaga ,  Yoshiko Tsuji ,  Mitsushi Ikeda ,  Masaru Nikaido ,  Shoichi Kurauchi

IPC分类号： G02F1/1335 ,  G02F1/1362 ,  G02F1/136 ,  G02F1/1333

CPC分类号： G02F1/136286 ,  G02F1/133512 ,  G02F1/133516

摘要： The present invention includes a substrate for a display device and a liquid crystal display device using the same having a functional layer at least partially made of an organic-inorganic hybrid glass. The present invention includes a method of manufacturing a substrate for a display device having the steps of forming a switching element on a substrate, forming a polysilane layer on the substrate, irradiating ultraviolet light to the polysilane layer, to form a latent image for a pattern, dipping the substrate into a dipping solution so that a material of the dipping solution soaks into the exposed portion, vitrificating the exposed portion by heating. According to the method, a pattern having different regions in characteristics (insulating, conductive, and coloring) can be formed easily by changing in composition of the dipping solution.

摘要翻译： 本发明包括用于显示装置的基板和使用该基板的液晶显示装置，该液晶显示装置具有至少部分由有机 - 无机混合玻璃制成的功能层。 本发明涉及一种制造显示装置用基板的方法，其特征在于，具有在基板上形成开关元件的步骤，在基板上形成聚硅烷层，向聚硅烷层照射紫外光，形成图案的潜像 将基材浸渍到浸渍溶液中，使得浸渍溶液的材料浸入暴露部分中，通过加热使暴露部分玻璃化。 根据该方法，通过改变浸渍溶液的组成，可以容易地形成具有不同特性区域（绝缘，导电和着色）的图案。

公开(公告)号：US5913100A

公开(公告)日：1999-06-15

申请号：US663251

申请日：1996-09-06

申请人： Yasuo Kohsaka ,  Yoshiharu Fukasawa ,  Yoshiko Tsuji ,  Mitsushi Ikeda ,  Michio Sato ,  Toshihiro Maki

发明人： Yasuo Kohsaka ,  Yoshiharu Fukasawa ,  Yoshiko Tsuji ,  Mitsushi Ikeda ,  Michio Sato ,  Toshihiro Maki

IPC分类号： B22F1/00 ,  C22C27/04 ,  C23C14/34 ,  G02F1/1362 ,  H01L21/02 ,  H01L21/768 ,  H01L23/532 ,  B22F3/00

CPC分类号： H01L28/60 ,  B22F1/0003 ,  C22C27/04 ,  C23C14/3414 ,  G02F1/136286 ,  H01L21/76838 ,  H01L23/53257 ,  G02F2001/136295 ,  H01L2924/0002 ,  Y10T428/12014 ,  Y10T428/12826 ,  Y10T428/1284 ,  Y10T428/2951

摘要： A Mo-W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo-W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo-W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo-W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo-W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo-W wiring thin film to be produced with high repeatability.

摘要翻译： PCT No.PCT / JP94 / 02095 Sec。 371日期1996年9月6日 102（e）1996年9月6日PCT PCT 1994年12月14日PCT公布。 公开号WO95 / 16797 日期：1995年6月22日公开了用于形成配线的Mo-W材料，其整体观察包含20至95％的钨，余量为钼和不可避免的杂质的原子百分数。 用于配线的Mo-W材料是通过粉末冶金技术或冶炼技术将Mo材料和W材料混合并整合得到的产品，或通过将所述材料以所述百分比组成计算的量排列得到的产品 以上。 含有20〜95％范围内的W的Mo-W材料表现出低电阻，同时在蚀刻剂的可加工性和耐受性方面优异。 将由该百分比组成的Mo-W合金形成的布线薄膜用作液晶显示装置的地址布线等。 用于形成配线的Mo-W靶由原子百分数20〜95％的钨和余量的钼和不可避免的杂质构成，能够以高重复性制造Mo-W布线薄膜。

公开(公告)号：US07115878B2

公开(公告)日：2006-10-03

申请号：US10728901

申请日：2003-12-08

申请人： Mitsushi Ikeda ,  Toshiyuki Oka ,  Mutsuki Yamazaki ,  Masaki Atsuta ,  Akira Kinno

发明人： Mitsushi Ikeda ,  Toshiyuki Oka ,  Mutsuki Yamazaki ,  Masaki Atsuta ,  Akira Kinno

IPC分类号： G01T1/24

CPC分类号： G21K4/00 ,  H01L27/14659

摘要： A flat panel X-ray detector which includes an X-ray-charge conversion film converting incident X-rays into electric charges, and a pair of electrodes disposed in contact with both surfaces of the X-ray-charge conversion film The X-ray-charge conversion film has a laminate structure including a plurality of metal halide films differing in band gap from one another and laminated along direction of c-axis of hexagonal crystal structure, and halogen atoms contained in the plurality of metal halide films are of the same kind among them.

摘要翻译： 一种平板X射线检测器，其包括将入射的X射线转换为电荷的X射线电荷转换膜和与X射线电荷转换膜的两个表面接触的一对电极.X射线 充电转换膜具有层叠结构，其包括彼此不同的带隙并且沿六方晶体结构的c轴方向层叠的多个金属卤化物膜，并且多个金属卤化物膜中包含的卤素原子相同 在他们中间。

公开(公告)号：US20070181816A1

公开(公告)日：2007-08-09

申请号：US11669299

申请日：2007-01-31

申请人： Mitsushi Ikeda ,  Toshiyuki Oka

发明人： Mitsushi Ikeda ,  Toshiyuki Oka

IPC分类号： G01T1/24 ,  H01L27/14 ,  H01L25/00 ,  G01J5/20 ,  H01L27/146

CPC分类号： H01L27/14676 ,  H01L27/14603 ,  H01L27/1462 ,  H01L27/14669 ,  H01L31/02161

摘要： An anisotropic conductive film includes: an insulating material; and a plurality of conductive particles dispersed in the insulating material, the conductive particles provided in a plurality of lines in a first direction along the thickness of the insulating material, the conductive particles in the lines disposed electrically connectable to each other, and the conductive particles in different lines disposed apart from each other in a second direction perpendicular to the first direction.

摘要翻译： 各向异性导电膜包括：绝缘材料; 以及分散在所述绝缘材料中的多个导电粒子，所述导电粒子沿着所述绝缘材料的厚度沿着第一方向设置在多条线上，所述导体粒子彼此电连接地设置，所述导电粒子 在垂直于第一方向的第二方向上彼此分离的不同的线。