公开(公告)号：US4556816A

公开(公告)日：1985-12-03

申请号：US510910

申请日：1983-07-05

申请人： Yoshinori Imamura ,  Saburo Ataka ,  Yukio Takasaki ,  Yasuo Tanaka ,  Tadaaki Hirai ,  Eiichi Maruyama

发明人： Yoshinori Imamura ,  Saburo Ataka ,  Yukio Takasaki ,  Yasuo Tanaka ,  Tadaaki Hirai ,  Eiichi Maruyama

IPC分类号： H01J29/45 ,  H01L31/0248 ,  H01L31/09 ,  H04N5/30 ,  H04N5/335 ,  H04N5/361 ,  H04N5/369 ,  H01J31/00 ,  H01J31/26

CPC分类号： H01L31/095 ,  H01J29/456 ,  H01J9/233

摘要： Disclosed is a photoelectric device having at least a signal electrode, and an amorphous photoconductor layer whose principal constituent is silicon and which contains hydrogen as an indispensable constituent element, the amorphous photoconductor layer being disposed in adjacency to the signal electrode, characterized by comprising a thin layer interposed between the signal electrode and the amorphous photoconductor layer, the thin layer being made of an inorganic material whose principal constituent is at least one compound selected from the group consisting of oxides of at least one element selected from the group that consists of Si, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La, Be, Sc and Co, nitrides of at least one element selected from the group that consists of Ga, Si, Mg, Te, Hf, Zr, Nb and B, and halides of at least one element selected from the group that consists of Na, Mg, Li, Ba, Ca and K.

摘要翻译： 公开了至少具有信号电极的光电器件和主要成分为硅并且含有氢作为不可或缺的构成元件的非晶质感光体层，非晶体感光体层与信号电极相邻设置，其特征在于，包括薄的 层，其被设置在信号电极和非晶体感光体层之间，薄层由主要成分为选自由Si组成的组中的至少一种元素的氧化物组成的组中的至少一种化合物的无机材料制成， Ti，Al，Mg，Ba，Ta，Bi，V，Ni，Th，Fe，La，Be，Sc和Co，选自由Ga，Si，Mg，Te，Hf组成的组中的至少一种元素的氮化物 ，Zr，Nb和B以及选自由Na，Mg，Li，Ba，Ca和K组成的组中的至少一种元素的卤化物。

公开(公告)号：US4249106A

公开(公告)日：1981-02-03

申请号：US92021

申请日：1979-11-07

申请人： Eiichi Maruyama ,  Saburo Ataka ,  Kiyohisa Inao ,  Yoshinori Imamura ,  Toshihisa Tsukada ,  Yukio Takasaki ,  Tadaaki Hirai

发明人： Eiichi Maruyama ,  Saburo Ataka ,  Kiyohisa Inao ,  Yoshinori Imamura ,  Toshihisa Tsukada ,  Yukio Takasaki ,  Tadaaki Hirai

IPC分类号： H01J9/233 ,  H01J29/39 ,  H01J29/45

CPC分类号： H01J29/39 ,  H01J29/45 ,  H01J9/233

摘要： A radiation sensitive screen comprising a crystalline silicon substrate which is located on a side of incidence of radiation, and an amorphous silicon film which contains hydrogen and which is located on the opposite side of the substrate to the side of the incidence of the radiation. The radiation sensitive screen of this invention can be manufactured by a simple method, and can achieve a high resolution. It is useful for the target of an image pickup tube, the electron bombardment target of an X-ray fluorescence multiplier tube, etc.

摘要翻译： 一种辐射敏感屏幕，其包括位于辐射入射侧的晶体硅衬底和包含氢的位于辐射入射侧的衬底相对侧上的非晶硅膜。 本发明的辐射敏感屏可以通过简单的方法制造，并且可以实现高分辨率。 对于图像拾取管的目标，X射线荧光倍增管的电子轰击靶等等是有用的

公开(公告)号：US4255686A

公开(公告)日：1981-03-10

申请号：US39580

申请日：1979-05-16

申请人： Eiichi Maruyama ,  Yoshinori Imamura ,  Saburo Ataka ,  Kiyohisa Inao ,  Yukio Takasaki ,  Toshihisa Tsukada ,  Tadaaki Hirai

发明人： Eiichi Maruyama ,  Yoshinori Imamura ,  Saburo Ataka ,  Kiyohisa Inao ,  Yukio Takasaki ,  Toshihisa Tsukada ,  Tadaaki Hirai

IPC分类号： H01J29/45 ,  H01L31/0248 ,  H01J31/38

CPC分类号： H01J29/45

摘要： In a photosensor having at least a light-transmitting conductive layer which is arranged on the side of light incidence, and a photoconductive layer in which charges are stored in correspondence with the light incidence; a photosensor characterized in that at least a region of said photoconductive layer for storing the charges is made of an amorphous material which contains hydrogen and silicon as indispensable constituent elements thereof, in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 10 atomic % and at most 50 atomic %, and whose resistivity is not lower than 10.sup.10 .OMEGA..multidot.cm.

摘要翻译： 在具有布置在光入射侧的至少一个透光导电层的光电传感器中，以及与光入射相对应地存储电荷的光电导层; 一种光电传感器，其特征在于，用于存储电荷的所述光电导层的至少一个区域由含有氢和硅作为其不可缺少的构成元素的非晶材料制成，其中硅占至少50原子％，氢相当于 至少10原子％且至多50原子％，并且其电阻率不低于1010欧米加×厘米2。

公开(公告)号：US4380557A

公开(公告)日：1983-04-19

申请号：US287554

申请日：1981-07-28

申请人： Sachio Ishioka ,  Yasuharu Shimomoto ,  Yoshinori Imamura ,  Saburo Ataka ,  Yasuo Tanaka ,  Hirokazu Matsubara ,  Yukio Takasaki ,  Eiichi Maruyama

发明人： Sachio Ishioka ,  Yasuharu Shimomoto ,  Yoshinori Imamura ,  Saburo Ataka ,  Yasuo Tanaka ,  Hirokazu Matsubara ,  Yukio Takasaki ,  Eiichi Maruyama

IPC分类号： G03G5/08 ,  B05D3/02 ,  B05D3/04 ,  H01J9/233 ,  H01L21/205 ,  H01L31/04 ,  H01L31/08 ,  H01L31/10

CPC分类号： H01J9/233

摘要： In preparing an image pickup device by using hydrogen-containing amorphous silicon for a photoconductive layer, a hydrogen-containing amorphous silicon layer is first formed and is then heat-treated at 100.degree. to 300.degree. C. The image pickup characteristics of the amorphous silicon layer are highly improved by this heat treatment. For example, the lag and dark current are reduced and the signal current-target voltage characteristic is improved. Especially excellent improving effects can be obtained when amorphous silicon characterized in that (1) the hydrogen content is 5 to 30 atomic %, (2) the optical forbidden band gap is 1.30 to 1.95 eV and (3) in the infrared absorption spectrum, the component of a wave number of 2000 cm.sup.-1 is observed larger than the component of a wave number of 2100 cm.sup.-1 is subjected to the above-mentioned heat treatment. The adhesion to the substrate is enhanced, and good image pickup characteristics can be obtained.

摘要翻译： 在通过使用含氢非晶硅作为光电导层制备图像拾取装置时，首先形成含氢非晶硅层，然后在100℃至300℃下进行热处理。非晶硅的图像拾取特性 通过这种热处理高度改善了层。 例如，滞后和暗电流降低，信号电流 - 目标电压特性提高。 当非晶硅的特征在于：（1）氢含量为5〜30原子％，（2）光学禁带宽为1.30〜1.95eV，（3）在红外吸收光谱中，特别优异的改善效果为 观察到比2100cm -1的波数的分量更大的波数为2000cm -1的分量进行上述热处理。 增强了与基板的粘附性，并且可以获得良好的图像拾取特性。

公开(公告)号：US4405879A

公开(公告)日：1983-09-20

申请号：US246588

申请日：1981-03-23

申请人： Saburo Ataka ,  Yoshinori Imamura ,  Yasuo Tanaka ,  Hirokazu Matsubara ,  Eiichi Maruyama

发明人： Saburo Ataka ,  Yoshinori Imamura ,  Yasuo Tanaka ,  Hirokazu Matsubara ,  Eiichi Maruyama

IPC分类号： H01J9/233 ,  H01J29/45 ,  B05D1/36 ,  H01J31/38

CPC分类号： H01J29/456 ,  H01J9/233

摘要： There is disclosed a photoelectric conversion device comprising a transparent substrate; a transparent conductive film formed on said substrate; a photoconductive layer formed of hydrogenated amorphous silicon as an indispensable component and deposited on said transparent conductive film; and a chalcogen glass film formed on said photoconductive layer, wherein said chalcogen glass film includes at least a chalcogen glass layer formed in an atmosphere of inert gas kept at 1.5.times.10.sup.-2 to 1.5.times.10.sup.-1 Torr. As chalcogen glass is preferably used Sb.sub.2 S.sub.3, As.sub.2 S.sub.3, As.sub.2 Se.sub.3 or Sb.sub.2 Se.sub.3. The chalcogen glass film may be a composite film consisting of plural component layers. This invention is very useful to reduce dark current in an image pickup tube and to prevent image inversion in the image pickup tube.

摘要翻译： 公开了一种包括透明基板的光电转换装置; 形成在所述基板上的透明导电膜; 由氢化非晶硅作为不可缺少的成分形成并沉积在所述透明导电膜上的光电导层; 以及形成在所述光电导层上的硫属玻璃膜，其中所述硫属玻璃膜至少包含在保持在1.5×10 -2至1.5×10 -1乇的惰性气体气氛中形成的至少一种硫族化合物玻璃层。 作为硫属玻璃，优选使用Sb2S3，As2S3，As2Se3或Sb2Se3。 硫属玻璃膜可以是由多个成分层构成的复合膜。 本发明对于降低图像拾取管中的暗电流并且防止图像拾取管中的图像反转非常有用。

公开(公告)号：US4419604A

公开(公告)日：1983-12-06

申请号：US257611

申请日：1981-04-24

申请人： Sachio Ishioka ,  Yoshinori Imamura ,  Yasuharu Shimomoto ,  Saburo Ataka ,  Yasuo Tanaka ,  Eiichi Maruyama

发明人： Sachio Ishioka ,  Yoshinori Imamura ,  Yasuharu Shimomoto ,  Saburo Ataka ,  Yasuo Tanaka ,  Eiichi Maruyama

IPC分类号： H01J29/45 ,  H01L21/205 ,  H01L27/146 ,  H01L31/0248 ,  H01L31/09 ,  H04N5/30 ,  H04N5/335 ,  H04N5/361 ,  H04N5/369 ,  H04N5/374

CPC分类号： H01L31/095 ,  H01J29/456 ,  H01J9/233 ,  H01L27/14665

摘要： Disclosed is a light sensitive screen including at least a light-transmitting conductive film and a photoconductive layer, the light-transmitting conductive film being arranged on a side of incidence of light, characterized in that the photoconductive layer is constructed of a single layer or a plurality of layers of one or more photoconductive substances, at least one of such photoconductive substance layers being formed of an amorphous silicon material which contains at least 5 atomic-% to 30 atomic-% of hydrogen, whose optical forbidden band gap is 1.65 eV to 2.25 eV and whose peak component in an infrared absorption spectrum at a wave number of 2,100 cm.sup.-1 is greater than that at a wave number of 2,000 cm.sup.-1. Various characteristics of an imaging device provided with the light sensitive screen, such as dark current, lag and after image characteristics, are improved.

摘要翻译： 公开了一种至少包括透光导电膜和光电导层的感光屏，所述透光导电膜布置在光入射侧，其特征在于，所述光电导层由单层或 多层一层或多层感光物质，至少一层这样的光电导物质层由含有至少5原子％至30原子％氢的非晶硅材料形成，其光学禁带宽为1.65eV至 2.25eV，其波数为2100cm -1的红外吸收光谱中的峰分量大于2000cm -1的波数时的峰分量。 提供了诸如暗电流，滞后和后图像特性的光敏屏幕的成像装置的各种特性得到改善。

公开(公告)号：US4360821A

公开(公告)日：1982-11-23

申请号：US66230

申请日：1979-08-13

申请人： Toshihisa Tsukada ,  Eiichi Maruyama ,  Toru Baji ,  Saburo Ataka ,  Yoshinori Imamura ,  Akira Sasano ,  Masaharu Kubo ,  Norio Koike ,  Shusaku Nagahara

发明人： Toshihisa Tsukada ,  Eiichi Maruyama ,  Toru Baji ,  Saburo Ataka ,  Yoshinori Imamura ,  Akira Sasano ,  Masaharu Kubo ,  Norio Koike ,  Shusaku Nagahara

IPC分类号： H01L27/146 ,  H01L27/14

CPC分类号： H01L27/14665

摘要： In a solid-state imaging device having a plurality of photosensitive portions and a semiconductor substrate which includes at least scanning means for scanning the photosensitive portions, the photosensitive portions including a layer of a photosensitive material overlying the semiconductor substrate and a transparent electrically conductive film overlying the photosensitive material layer; a solid-state imaging device characterized in that the photosensitive material is an amorphous material whose indispensable constituent is silicon and which contains hydrogen. The hydrogen content of the photosensitive material is preferably 5 atomic-% to 30 atomic-%, especially 10 atomic-% to 25 atomic-%.

摘要翻译： 在具有多个感光部分的固态成像装置和至少包括用于扫描感光部分的扫描装置的半导体衬底上，感光部分包括覆盖在半导体衬底上的感光材料层和覆盖着透明导电膜的透明导电膜 感光材料层; 一种固态成像装置，其特征在于感光材料是不可缺少的成分是硅并且含有氢的无定形材料。 感光材料的氢含量优选为5原子％至30原子％，特别是10原子％至25原子％。

公开(公告)号：US4806757A

公开(公告)日：1989-02-21

申请号：US924735

申请日：1986-10-30

申请人： Tsuyoshi Kano ,  Tetsuhiko Takahashi ,  Kenichi Okajima ,  Kenji Umetani ,  Saburo Ataka ,  Hisatake Yokouchi ,  Ryuichi Suzuki

发明人： Tsuyoshi Kano ,  Tetsuhiko Takahashi ,  Kenichi Okajima ,  Kenji Umetani ,  Saburo Ataka ,  Hisatake Yokouchi ,  Ryuichi Suzuki

IPC分类号： C09K11/61 ,  G01T1/29 ,  G21K4/00 ,  G02B26/10

CPC分类号： C09K11/616 ,  G01T1/2012 ,  G01T1/2014 ,  G21K4/00

摘要： When the laser-stimulable phosphor plate of an information reading apparatus for radiation image is constituted of CsI as the base and 0.0003 to 0.03% in atomic ratio of Na, the output signal of the information reading apparatus can be increased and the decay time thereof can be shortened. When output signals are produced by detecting fluorescence emitted from a fluoroscopic plate disposed in confrontation with the laser-stimulable phosphor plate, there is provided an information reading apparatus for radiation image having an improved S/N ratio and a high efficiency of taking in laser-stimulated luminescence. Further, instead of Na or together with Na, there may be added at least one element selected from the group consisting of Li, K, Rb, Cu, Au, Be, Mg, Ca, Sr, Ba, Zn, Cd, Hg, B, Al, Ga, In, Tl, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Si, Ti, Zr, Ge, Sn, Pb, As, Sb, and Bi. In this case, the total content of these elements is set to be 0.00001 to 1% in atomic ratio.

摘要翻译： 当用于放射线图像的信息读取装置的激光可刺激的磷光体板以CsI为基准，以Na原子比为0.0003〜0.03％时，信息读取装置的输出信号可以增加，其衰减时间可以 缩短。 当通过检测由与激光可激发的荧光体板对置设置的荧光检查板发出的荧光而产生输出信号时，提供了一种具有改善的S / N比和具有高激光吸收能力的高效率的放射线图像的信息读取装置， 刺激发光。 此外，代替Na或与Na一起，可以添加至少一种选自Li，K，Rb，Cu，Au，Be，Mg，Ca，Sr，Ba，Zn，Cd，Hg， B，Al，Ga，In，Tl，Sc，Y，La，Ce，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Si，Ti，Zr，Ge， Sn，Pb，As，Sb和Bi。 在这种情况下，这些元素的总含量以原子比设定为0.00001〜1％。

公开(公告)号：US4195230A

公开(公告)日：1980-03-25

申请号：US891033

申请日：1978-03-28

申请人： Saburo Ataka ,  Kiyohisa Inao ,  Kanetosi Tada ,  Yoshinori Okamura ,  Isamu Kimura

发明人： Saburo Ataka ,  Kiyohisa Inao ,  Kanetosi Tada ,  Yoshinori Okamura ,  Isamu Kimura

IPC分类号： H01J29/38 ,  G01J1/58

CPC分类号： H01J29/385

摘要： An input screen of an X-ray fluoromultiplier tube, that is, an X-ray image intensifier tube, wherein an evaporated aluminum film is interposed between a substrate and a fluorescent substance (cesium iodide) film is disclosed.The input screen according to this invention does not undergo the "charge-up" attributed to the exfoliation or cracks of the cesium iodide film, and can therefore present a picture of extraordinarily high quality.

摘要翻译： 公开了一种X射线荧光倍增管的输入屏幕，即X射线图像增强管，其中蒸发的铝膜插入在基板和荧光物质（碘化铯）膜之间。 根据本发明的输入屏幕不会经历归因于碘化铯膜的剥离或裂纹的“充电”，因此可以呈现出非常高的质量的图像。