Surface acoustic wave filter
    2.
    发明授权
    Surface acoustic wave filter 有权
    表面声波滤波器

    公开(公告)号:US06781483B2

    公开(公告)日:2004-08-24

    申请号:US10022096

    申请日:2001-12-13

    IPC分类号: H03H964

    CPC分类号: H03H9/6473 H03H9/6436

    摘要: In the surface acoustic wave filter, a longitudinally-coupled double-mode resonator filter formed by arranging a plurality of inter-digital transducers for exciting and receiving a surface acoustic wave adjacent each other in the direction of propagation of the surface acoustic wave is connected in series to a resonator having one or a plurality of inter-digital transducers for exciting and receiving a surface acoustic wave. A cutoff frequency on the high-frequency side of the pass band of the longitudinally-coupled double-mode resonator filter and the antiresonant frequency of the resonator are substantially equal. In the surface acoustic wave filter, the sharpness in the vicinity of the cutoff frequency on the high-frequency side of the pass band is high, sufficient attenuation can be obtained, and the input and output impedance matching state is good.

    摘要翻译: 在表面声波滤波器中,连接有多个用于激励和接收声表面波传播方向上彼此相邻的表面声波的数字互感器形成的纵向耦合双模谐振滤波器, 串联到具有用于激发和接收表面声波的一个或多个数字间换能器的谐振器。 纵向耦合双模谐振滤波器的通带的高频侧的截止频率和谐振器的反谐振频率基本相等。 在声表面波滤波器中,通带的高频侧的截止频率附近的锐度高,可以获得足够的衰减,输入和输出阻抗匹配状态良好。

    Longitudinal coupled multiple mode surface acoustic wave filter
    4.
    发明授权
    Longitudinal coupled multiple mode surface acoustic wave filter 有权
    纵向耦合多模式声表面波滤波器

    公开(公告)号:US06828879B2

    公开(公告)日:2004-12-07

    申请号:US10073895

    申请日:2002-02-14

    IPC分类号: H03H964

    摘要: The present invention provides an unbalanced input and balanced output type SAW filter capable of obtaining stop-band attenuation approximately equivalent to that of an unbalanced input and unbalanced output type SAW filter. IDTs (12) (13) are respectively disposed on each side of a middle IDT (11). A comb electrode (11c) of the middle IDT (11) is connected with an input terminal (In) and other comb electrode (11b) is grounded. A comb electrode (12c) of the IDT (12) and a comb electrode (13b) of the IDT (13) are respectively connected with output terminals (Out 1) and (Out 2), and other comb electrode (12b) of the IDT (12) and other comb electrode (13c) of the IDT (13) are connected to each other and grounded. Electrode fingers (11a), (12a), (13a) of the middle IDT (11) and the side IDT (12), (13) are so arranged that adjacent electrode fingers of the middle IDT and the IDT on one side make a connection between terminals and the other adjacent electrode fingers of the middle IDT and the IDT on other side make a connection between a terminal and a ground.

    摘要翻译: 本发明提供一种不平衡输入和平衡输出型SAW滤波器,其能够获得大致相当于不平衡输入和不平衡输出型SAW滤波器的阻带衰减。 IDT(12)(13)分别设置在中间IDT(11)的每一侧。 中间IDT(11)的梳状电极(11c)与输入端子(In)连接,其他梳状电极(11b)接地。 IDT(12)的梳状电极(12c)和IDT(13)的梳状电极(13b)分别与输出端子(Out 1)和(Out 2)以及其他梳状电极(12b)连接 IDT(13)的IDT(12)和其他梳状电极(13c)彼此连接并接地。 中间IDT(11)和侧IDT(12),(13)的电极指(11a),(12a),(13a)被布置成使得中间IDT和IDT的相邻电极指一侧形成 端子与中间IDT的其他相邻电极指和另一侧的IDT之间的连接在端子和地之间形成连接。

    Substrate coated with transparent conductive film and manufacturing method thereof
    5.
    发明授权
    Substrate coated with transparent conductive film and manufacturing method thereof 失效
    涂有透明导电膜的基板及其制造方法

    公开(公告)号:US06703130B2

    公开(公告)日:2004-03-09

    申请号:US10234198

    申请日:2002-09-05

    IPC分类号: B32B1500

    摘要: A substrate coated with a transparent conductive film is manufactured by: disposing a substrate 3 and a target 5 constituted of alloy of In and Sn in a film deposition chamber 1; leading an Ar gas ion beam into the film deposition chamber 1, to cause collision of the ion beam with the target 5, sputtering-emission of constitutive atoms of the target 5, and supply of the emitted atoms to the substrate 3; and leading oxide gas including oxygen radicals as a main element thereof from an ECR radical source 6 into the film deposition chamber 1, to deposit an ITO film 9 on the substrate 3. In this manufacturing method, a film is deposited on a film or substrate including an organic material without damaging the organic material. The deposited film has low resistivity, high transmission and preferable flatness.

    摘要翻译: 通过以下步骤制造涂覆有透明导电膜的基板:将由基板3和由In和Sn的合金构成的靶5设置在成膜室1中; 将Ar气体离子束引导到成膜室1中,引起离子束与靶5的碰撞,靶5的组成原子的溅射发射,以及将发射的原子供给到基板3; 将包含氧自由基作为主要成分的氧化物气体从ECR自由基源6引入成膜室1中,在基板3上沉积ITO膜9.在该制造方法中,将膜沉积在膜或基板上 包括有机材料,而不损坏有机材料。 沉积膜具有低电阻率,高透射率和优选的平坦度。

    Process for producing a superconducting transistor
    9.
    发明授权
    Process for producing a superconducting transistor 失效
    用于制造超导晶体管的工艺

    公开(公告)号:US5219834A

    公开(公告)日:1993-06-15

    申请号:US527075

    申请日:1990-05-21

    IPC分类号: H01L39/22 H01L39/24

    摘要: The present invention provides a process for producing a superconducting transistor on a surface of an insulating substrate. A pre-superconducting thin film contains a material that can be changed into a superconductor during subsequent processing but which is initially a non-superconductor. A thin film containing the material required by the pre-superconducting thin film is deposited in a preferred pattern on the pre-superconducting thin film. The assembly thus formed is heat treated to permit the material from the thin film to enter the pre-superconducting thin film, thereby forming superconducting regions in the pre-superconducting thin film in the preferred pattern. The superconducting regions form electrodes of the transistor.

    摘要翻译: 本发明提供了在绝缘基板的表面上制造超导晶体管的方法。 预超导薄膜含有在随后的加工过程中可以变成超导体的材料,但是最初是非超导体。 将包含预超导薄膜所需材料的薄膜以优选的图案沉积在预超导薄膜上。 这样形成的组件被热处理以允许来自薄膜的材料进入预超导薄膜,从而在优选图案中的超导薄膜中形成超导区域。 超导区域形成晶体管的电极。