公开(公告)号：US07352002B2

公开(公告)日：2008-04-01

申请号：US11403938

申请日：2006-04-14

申请人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

发明人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

IPC分类号： H01L29/04

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.

摘要翻译： 制造薄膜半导体器件衬底的方法包括在基底层上形成非单晶半导体薄膜的步骤和用能量束照射非单晶半导体薄膜以提高结晶度的退火步骤 构成非单晶半导体薄膜的非单晶半导体。 退火步骤包括同时用多个能量束照射非单晶半导体薄膜，以形成多个单位区域，每个单位区域包括至少一个被能量束照射的照射区域和至少一个不照射的非照射区域 用能量束照射。

公开(公告)号：US20050161676A1

公开(公告)日：2005-07-28

申请号：US11062560

申请日：2005-02-23

申请人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Yoshitaka Yamamoto ,  Hideo Koseki

发明人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Yoshitaka Yamamoto ,  Hideo Koseki

IPC分类号： H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786 ,  H01L31/113

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78675

摘要： A method for producing a thin film semiconductor device is described. In the method, a thin film layer of non-single-crystalline semiconductor, which is deposited on a base layer of glass, is processed to an island-shaped thin film layer at the time prior to the layer irradiation step. The laser irradiation to the thin film layer of non-single-crystalline semiconductor is carried out after forming an insulation film layer and a gate electrode over the island-shaped thin film layer, by using the gate electrode as the irradiation mask, whereby the center area of the island-shaped thin film layer masked by the gate electrode is crystallized, and simultaneously, the both side areas thereof which is not masked by the gate electrode are annealed. Next, a source electrode and a drain electrode is formed in the annealed areas. The implantation of impurity ion may be carried out either before or after the laser irradiation. By the above order of steps, it becomes possible to obtain a thin film semiconductor device which has small numbers of crystals and less variance of grain size of crystals for each unit of electric circuit, compared with a device produced by the conventional process. Further, the process makes it possible to be even the boundary surface between the crystallized layer and the insulation layer in a device.

摘要翻译： 对薄膜半导体器件的制造方法进行说明。 在该方法中，沉积在玻璃基底层上的非单晶半导体薄膜层在层照射步骤之前被处理成岛形薄膜层。 通过使用栅电极作为照射掩模，在岛状薄膜层上形成绝缘膜层和栅电极之后，对非单晶半导体的薄膜层进行激光照射，由此中心 由栅电极掩蔽的岛状薄膜层的区域被结晶化，同时，未被栅极电极掩蔽的两侧区域退火。 接下来，在退火区域中形成源电极和漏电极。 杂质离子的注入可以在激光照射之前或之后进行。 通过上述步骤，与通过常规方法制造的器件相比，可以获得每个电路单元具有少量晶体和较小晶体粒径变化的薄膜半导体器件。 此外，该方法使得可以在器件中甚至结晶层和绝缘层之间的边界面。

公开(公告)号：US20060040436A1

公开(公告)日：2006-02-23

申请号：US11203962

申请日：2005-08-16

申请人： Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Yoshinobu Kimura

发明人： Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Yoshinobu Kimura

IPC分类号： H01L21/84

CPC分类号： H01L21/02686 ,  H01L21/2026 ,  H01L29/66772

摘要： A method for forming a crystallized semiconductor layer includes preparing a non-single-crystal semiconductor layer in which at least one crystal seed is formed, and irradiating with an energy ray the non-single-crystal semiconductor layer having the crystal seed formed therein to allow a crystal to laterally grow from the crystal seed in the non-single-crystal semiconductor layer, irradiation of the energy ray is carried out by positioning to at least a part of the crystal seed an area having a minimum intensity value of the energy ray, the energy ray having a confirmation that an area having a maximum intensity value of the energy ray is continuously reduced to the area having the minimum intensity value in an irradiated surface.

摘要翻译： 一种形成结晶化半导体层的方法包括制备其中形成至少一个晶种的非单晶半导体层，并且用能量线照射其中形成晶种的非单晶半导体层以允许 在非单晶半导体层中从晶种横向生长的晶体，通过将至少一部分晶种定位到晶种的至少一部分，进行能量射线的最小强度值的区域的照射， 能量射线确认具有能量射线的最大强度值的区域连续地减少到照射表面中具有最小强度值的区域。

公开(公告)号：US20050014315A1

公开(公告)日：2005-01-20

申请号：US10857941

申请日：2004-06-02

申请人： Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Yoshinobu Kimura

发明人： Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Yoshinobu Kimura

IPC分类号： G02F1/1345 ,  B23K26/00 ,  G02F1/1368 ,  H01L21/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/268 ,  H01L21/324 ,  H01L21/335 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L21/02686 ,  H01L21/2026 ,  H01L29/66772

摘要： A method for forming a crystallized semiconductor layer includes preparing a non-single-crystal semiconductor layer in which at least one crystal seed is formed, and irradiating with an energy ray the non-single-crystal semiconductor layer having the crystal seed formed therein to allow a crystal to laterally grow from the crystal seed in the non-single-crystal semiconductor layer, irradiation of the energy ray is carried out by positioning to at least a part of the crystal seed an area having a minimum intensity value of the energy ray, the energy ray having a confirmation that an area having a maximum intensity value of the energy ray is continuously reduced to the area having the minimum intensity value in an irradiated surface.

摘要翻译： 一种形成结晶化半导体层的方法包括制备其中形成至少一个晶种的非单晶半导体层，并且用能量线照射其中形成晶种的非单晶半导体层以允许 在非单晶半导体层中从晶种横向生长的晶体，通过将至少一部分晶种定位到晶种的至少一部分，进行能量射线的最小强度值的区域的照射， 能量射线确认具有能量射线的最大强度值的区域连续地减少到照射表面中具有最小强度值的区域。

公开(公告)号：US20060197093A1

公开(公告)日：2006-09-07

申请号：US11403938

申请日：2006-04-14

申请人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

发明人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.

摘要翻译： 制造薄膜半导体器件衬底的方法包括在基底层上形成非单晶半导体薄膜的步骤和用能量束照射非单晶半导体薄膜以提高结晶度的退火步骤 构成非单晶半导体薄膜的非单晶半导体。 退火步骤包括同时用多个能量束照射非单晶半导体薄膜，以形成多个单位区域，每个单位区域包括至少一个被能量束照射的照射区域和至少一个不照射的非照射区域 用能量束照射。

公开(公告)号：US06953714B2

公开(公告)日：2005-10-11

申请号：US10293939

申请日：2002-11-14

申请人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Yoshitaka Yamamoto ,  Hideo Koseki

发明人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Yoshitaka Yamamoto ,  Hideo Koseki

IPC分类号： H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78675

摘要： A method for producing a thin film semiconductor device is described. In the method, a thin film layer of non-single-crystalline semiconductor, which is deposited on a base layer of glass, is processed to an island-shaped thin film layer at the time prior to the layer irradiation step. The laser irradiation to the thin film layer of non-single-crystalline semiconductor is carried out after forming an insulation film layer and a gate electrode over the island-shaped thin film layer, by using the gate electrode as the irradiation mask, whereby the center area of the island-shaped thin film layer masked by the gate electrode is crystallized, and simultaneously, the both side areas thereof which is not masked by the gate electrode are annealed. Next, a source electrode and a drain electrode is formed in the annealed areas. The implantation of impurity ion may be carried out either before or after the laser irradiation. By the above order of steps, it becomes possible to obtain a thin film semiconductor device which has small numbers of crystals and less variance of grain size of crystals for each unit of electric circuit, compared with a device produced by the conventional process. Further, the process makes it possible to be even the boundary surface between the crystallized layer and the insulation layer in a device.

摘要翻译： 对薄膜半导体器件的制造方法进行说明。 在该方法中，沉积在玻璃基底层上的非单晶半导体薄膜层在层照射步骤之前被处理成岛形薄膜层。 通过使用栅电极作为照射掩模，在岛状薄膜层上形成绝缘膜层和栅电极之后，对非单晶半导体的薄膜层进行激光照射，由此中心 由栅电极掩蔽的岛状薄膜层的区域被结晶化，同时，未被栅极电极掩蔽的两侧区域退火。 接下来，在退火区域中形成源电极和漏电极。 杂质离子的注入可以在激光照射之前或之后进行。 通过上述步骤，与通过常规方法制造的器件相比，可以获得每个电路单元具有少量晶体和较小晶体粒径变化的薄膜半导体器件。 此外，该方法使得可以在器件中甚至结晶层和绝缘层之间的边界面。

公开(公告)号：US07087505B2

公开(公告)日：2006-08-08

申请号：US10755303

申请日：2004-01-13

申请人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

发明人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

IPC分类号： H01L21/20

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.

公开(公告)号：US06987035B2

公开(公告)日：2006-01-17

申请号：US10857941

申请日：2004-06-02

申请人： Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Yoshinobu Kimura

发明人： Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Yoshinobu Kimura

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  H01L21/2026 ,  H01L29/66772

摘要： A method for forming a crystallized semiconductor layer includes preparing a non-single-crystal semiconductor layer in which at least one crystal seed is formed, and irradiating with an energy ray the non-single-crystal semiconductor layer having the crystal seed formed therein to allow a crystal to laterally grow from the crystal seed in the non-single-crystal semiconductor layer, irradiation of the energy ray is carried out by positioning to at least a part of the crystal seed an area having a minimum intensity value of the energy ray, the energy ray having a confirmation that an area having a maximum intensity value of the energy ray is continuously reduced to the area having the minimum intensity value in an irradiated surface.

摘要翻译： 一种形成结晶化半导体层的方法包括制备其中形成至少一个晶种的非单晶半导体层，并且用能量线照射其中形成晶种的非单晶半导体层以允许 在非单晶半导体层中从晶种横向生长的晶体，通过将至少一部分晶种定位到晶种的至少一部分，进行能量射线的最小强度值的区域的照射， 能量射线确认具有能量射线的最大强度值的区域连续地减少到照射表面中具有最小强度值的区域。

公开(公告)号：US20050272274A1

公开(公告)日：2005-12-08

申请号：US11198656

申请日：2005-08-05

申请人： Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Masayuki Jyumonji ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Fumiki Nakano

发明人： Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Masayuki Jyumonji ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Fumiki Nakano

IPC分类号： B23K26/06 ,  C30B1/00 ,  C30B13/00 ,  C30B13/24 ,  H01L21/20 ,  H01L21/268 ,  H01L21/26

CPC分类号： H01L21/02678 ,  B23K26/06 ,  B23K26/066 ,  B23K2101/40 ,  C30B1/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02691 ,  H01L21/2026 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016

摘要： Disclosed are apparatus for forming a semiconductor film having an excellent crystallinity from a non-single crystal semiconducting layer formed on a base layer made of an insulating material. The apparatus includes a light source, a homogenizer for homogenizing an intensity distribution of the emitted light, an amplitude-modulation means for performing the amplitude-modulation such that the amplitude of the light, of which the intensity distribution is homogenized, is increased in the direction of the relative motion of the light to the base layer, an optional light projection optical system for projecting the amplitude-modulated light onto the surface of the non-single crystal semiconductor such that a predetermined irradiation energy can be obtained, a phase shifter for providing a low temperature point in the surface irradiated by the light, and a substrate stage to move the light relative to the substrate thereby enabling scanning in the X and Y axis.

摘要翻译： 公开了一种从由绝缘材料制成的基底层上形成的非单晶半导体层形成具有优异结晶度的半导体膜的装置。 该装置包括光源，用于均匀化发射光的强度分布的均质器，用于执行调幅的幅度调制装置，使得强度分布均匀化的光的振幅在 光向基层的相对运动的方向，用于将调幅光投影到非单晶半导体的表面上以使得能够获得预定的照射能量的可选的光投射光学系统，用于 在由光照射的表面中提供低温点，以及衬底台，以相对于衬底移动光，从而使得能够在X和Y轴上进行扫描。

公开(公告)号：US07335261B2

公开(公告)日：2008-02-26

申请号：US11198656

申请日：2005-08-05

申请人： Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Masayuki Jyumonji ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Fumiki Nakano

发明人： Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Masayuki Jyumonji ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Fumiki Nakano

IPC分类号： C30B1/04

CPC分类号： H01L21/02678 ,  B23K26/06 ,  B23K26/066 ,  B23K2101/40 ,  C30B1/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02691 ,  H01L21/2026 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016

摘要： Disclosed are apparatus for forming a semiconductor film having an excellent crystallinity from a non-single crystal semiconducting layer formed on a base layer made of an insulating material. The apparatus includes a light source, a homogenizer for homogenizing an intensity distribution of the emitted light, an amplitude-modulation means for performing the amplitude-modulation such that the amplitude of the light, of which the intensity distribution is homogenized, is increased in the direction of the relative motion of the light to the base layer, an optional light projection optical system for projecting the amplitude-modulated light onto the surface of the non-single crystal semiconductor such that a predetermined irradiation energy can be obtained, a phase shifter for providing a low temperature point in the surface irradiated by the light, and a substrate stage to move the light relative to the substrate thereby enabling scanning in the X and Y axis.

摘要翻译： 公开了一种从由绝缘材料制成的基底层上形成的非单晶半导体层形成具有优异结晶度的半导体膜的装置。 该装置包括光源，用于均匀化发射光的强度分布的均质器，用于执行调幅的幅度调制装置，使得强度分布均匀化的光的振幅在 光向基层的相对运动的方向，用于将调幅光投影到非单晶半导体的表面上以使得能够获得预定的照射能量的可选的光投射光学系统，用于 在由光照射的表面中提供低温点，以及衬底台，以相对于衬底移动光，从而使得能够在X和Y轴上进行扫描。