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115 条记录 (耗时 0.055 秒)

    Copier
    4.
    发明授权
    Copier 失效
    复印机

    公开(公告)号：US5826154A

    公开(公告)日：1998-10-20

    申请号：US654671

    申请日：1996-05-29

    申请人： Toshiki Yamashita ,  Jun Doi ,  Tomonori Fukui ,  Fumio Kawamura ,  Jyouji Katoh ,  Yasuo Kawada

    发明人： Toshiki Yamashita ,  Jun Doi ,  Tomonori Fukui ,  Fumio Kawamura ,  Jyouji Katoh ,  Yasuo Kawada

    IPC分类号： G03G15/00 ,  B65H85/00 ,  G03G15/23 ,  H04N1/00

    CPC分类号： H04N1/00575 ,  G03G15/234 ,  H04N1/00572 ,  H04N1/0058 ,  H04N1/00602 ,  H04N1/00657 ,  H04N1/00795

    摘要： A photocopier having a duplex copy unit unable to stack a plurality of recording media thereon, wherein an image scanner is controlled such that the scanner reads the first document, then reads the first document and the second document alternately, and finally reads the second document. A medium feed device and the duplex copy unit are controlled such that one recording medium is fed from the medium feed device, then recording media are alternately fed from the medium feed device and duplex copy unit one at a time, and finally one recording media is fed from the duplex copy unit, thereby reducing the period of time necessary for reproducing the images of a document or documents on both sides of recording media and enhancing the productivity of the copier.

    摘要翻译： 具有双面复制单元的复印机不能在其上堆叠多个记录介质，其中控制图像扫描器使得扫描仪读取第一文档，然后交替地读取第一文档和第二文档，并最终读取第二文档。 控制介质供给装置和双面复印单元，使得一个记录介质从介质供给装置供给，然后一次从介质进给装置和双面复印单元交替地进给记录介质，最后一个记录介质是 从双工复制单元馈送，从而减少了在记录介质的两侧再现文档或文档的图像所需的时间段，并且提高了复印机的生产率。

    Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby
    6.
    发明授权
    Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby 失效
    生产III族元素氮化物晶体的方法，其中使用的制造装置以及由此制造的半导体元件

    公开(公告)号：US07794539B2

    公开(公告)日：2010-09-14

    申请号：US10599501

    申请日：2005-03-31

    申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Yasuhito Takahashi

    发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Yasuhito Takahashi

    IPC分类号： C30B9/00 ,  C30B30/04 ,  C30B28/06 ,  C30B11/00

    CPC分类号： C30B9/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1092 ,  Y10T117/1096

    摘要： A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used therein, and a semiconductor element obtained using the method and the apparatus are provided. The method is a method for producing Group-III-element nitride crystals that includes a crystal growth process of subjecting a material solution containing a Group III element, nitrogen, and at least one of alkali metal and alkaline-earth metal to pressurizing and heating under an atmosphere of a nitrogen-containing gas so that the nitrogen and the Group III element in the material solution react with each other to grow crystals. The method further includes, prior to the crystal growth process, a material preparation process of preparing the material solution in a manner that under an atmosphere of a nitrogen-containing gas, at least one of an ambient temperature and an ambient pressure is set so as to be higher than is set as a condition for the crystal growth process so that the nitrogen is allowed to dissolve in a melt containing the Group III element and the at least one of alkali metal and alkaline-earth metal. The method according to the present invention can be performed by using, for example, the producing apparatus shown in FIG. 7.

    摘要翻译： 一种生产III族元素的氮化物晶体的方法，其中获得了改善的生长速率并且可以在短时间内生长大量的高质量晶体，其中使用的制造装置以及使用该方法和装置得到的半导体元件 被提供。 该方法是生产III族元素氮化物晶体的方法，其包括使含有III族元素，氮和至少一种碱金属和碱土金属的材料溶液经受加压和加热的晶体生长过程 含氮气体的气氛使得材料溶液中的氮和III族元素彼此反应生长晶体。 该方法还包括在晶体生长过程之前，制备材料制备方法，该方法是在含氮气体的气氛中，将环境温度和环境压力中的至少一种设定为 高于设定为晶体生长过程的条件，使得氮能够溶解在含有III族元素和碱金属和碱土金属中的至少一种的熔体中。 根据本发明的方法可以通过使用例如图1所示的制造装置来执行。 7。

    Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride
    9.
    发明申请
    Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride 有权
    用于生产III族元素氮化物晶体的装置和用于生产III族元素氮化物晶体的方法

    公开(公告)号：US20080213158A1

    公开(公告)日：2008-09-04

    申请号：US12082745

    申请日：2008-04-14

    申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Hidekazu Umeda ,  Yasuhito Takahashi

    发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Hidekazu Umeda ,  Yasuhito Takahashi

    IPC分类号： C30B23/00 ,  C01B21/06

    CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B29/406 ,  C30B35/00 ,  Y10T117/1064 ,  Y10T117/1096

    摘要： A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented. Further, since the gas flows through the reactor vessel (120), there is no aggregation of an evaporating alkali metal, etc., at the gas inlet or the like, and such an alkali metal does not flow into the gas supplying device (180). As a result, the quality of Group III nitride crystals obtained can be improved.

    摘要翻译： 提供III族氮化物晶体的制造装置和制造III族氮化物晶体的方法，由此可以制造高质量的晶体。 例如，使用本发明的装置如下生长晶体。 将晶体原料（131）和含氮气体引入反应器容器（120）中，通过加热器（110）向其施加热量，并在施加压力的气氛中生长晶体。 气体通过反应器容器的气体入口从气体供给装置（180）引入反应器容器（120），然后通过反应器的气体出口被排出到耐压容器（102）的内部 反应堆容器。 由于气体不通过耐压容器（102）直接引入反应器容器（120），附着在耐压容器（102）等上的杂质混合物进入晶体生长位置可以 被阻止 此外，由于气体流过反应器容器（120），所以在气体入口等处没有蒸发的碱金属等的聚集，并且这种碱金属不会流入气体供给装置（180 ）。 结果，可以提高获得的III族氮化物晶体的质量。

    Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-Nitride Crystal Substrate and Semiconductor Device
    10.
    发明申请
    Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-Nitride Crystal Substrate and Semiconductor Device 有权
    第III族氮化物晶体及其制造方法，III族氮化物晶体基板和半导体器件

    公开(公告)号：US20080022921A1

    公开(公告)日：2008-01-31

    申请号：US11628253

    申请日：2005-04-15

    申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

    发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

    IPC分类号： C30B29/38 ,  C30B11/06 ,  C30B9/10 ,  H01L33/00

    CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B11/00 ,  H01L33/0075 ,  H01L33/32

    摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

    摘要翻译： 一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有 至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中 至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。 可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。