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公开(公告)号：US08963189B2
公开(公告)日：2015-02-24
申请号：US13052250
申请日：2011-03-21
CPC分类号： H01L33/62 , H01L27/153 , H01L33/0079 , H01L33/486 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface and a light emitting layer. An edge of a part of the first interconnect layer is exposed laterally from the first insulating layer and the second insulating layer.
摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和第二金属柱 绝缘层。 半导体层包括第一主表面，与第一主表面相对的第二主表面和发光层。 第一互连层的一部分的边缘从第一绝缘层和第二绝缘层横向暴露。
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公开(公告)号：US08399275B2
公开(公告)日：2013-03-19
申请号：US13153554
申请日：2011-06-06
申请人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki , Hiroshi Koizumi , Tomomichi Naka , Yasuhide Okada
发明人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki , Hiroshi Koizumi , Tomomichi Naka , Yasuhide Okada
IPC分类号： H01L21/00
CPC分类号： H01L33/508 , H01L25/0753 , H01L33/0079 , H01L33/486 , H01L33/502 , H01L33/58 , H01L2924/0002 , H01L2933/0041 , H01L2933/0066 , H01L2924/00
摘要： According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.
摘要翻译： 根据一个实施例，公开了一种制造半导体发光器件的方法。 该方法可以包括形成第一互连层，第二互连层，第一金属柱，第二金属柱，第二绝缘层，透明材料和磷光体层。 基于从第一主面侧获得的光的发射光谱，在从多个半导体层中选择的半导体层的第一主表面上形成透明材料。 透明材料透光。 荧光体层形成在透明材料和多个半导体层的第一主表面上。
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公开(公告)号：US20110300644A1
公开(公告)日：2011-12-08
申请号：US13153554
申请日：2011-06-06
申请人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki , Hiroshi Koizumi , Tomomichi Naka , Yasuhide Okada
发明人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki , Hiroshi Koizumi , Tomomichi Naka , Yasuhide Okada
IPC分类号： H01L21/66
CPC分类号： H01L33/508 , H01L25/0753 , H01L33/0079 , H01L33/486 , H01L33/502 , H01L33/58 , H01L2924/0002 , H01L2933/0041 , H01L2933/0066 , H01L2924/00
摘要： According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.
摘要翻译： 根据一个实施例，公开了一种制造半导体发光器件的方法。 该方法可以包括形成第一互连层，第二互连层，第一金属柱，第二金属柱，第二绝缘层，透明材料和磷光体层。 基于从第一主面侧获得的光的发射光谱，在从多个半导体层中选择的半导体层的第一主表面上形成透明材料。 透明材料透光。 荧光体层形成在透明材料和多个半导体层的第一主表面上。
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公开(公告)号：US08692279B2
公开(公告)日：2014-04-08
申请号：US13052248
申请日：2011-03-21
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/38 , H01L33/486 , H01L33/50 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface, and a light emitting layer. The first electrode is provided on a region including the light emitting layer on the second major surface. The second electrode is provided on the second major surface and interposed in the first electrode in a planar view.
摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和 第二绝缘层。 半导体层包括第一主表面，与第一主表面相对的第二主表面和发光层。 第一电极设置在包括第二主表面上的发光层的区域上。 第二电极设置在第二主表面上并且以平面视图插入第一电极中。
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公开(公告)号：US20110297998A1
公开(公告)日：2011-12-08
申请号：US13052250
申请日：2011-03-21
CPC分类号： H01L33/62 , H01L27/153 , H01L33/0079 , H01L33/486 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface and a light emitting layer. An edge of a part of the first interconnect layer is exposed laterally from the first insulating layer and the second insulating layer.
摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和第二金属柱 绝缘层。 半导体层包括第一主表面，与第一主表面相对的第二主表面和发光层。 第一互连层的一部分的边缘从第一绝缘层和第二绝缘层横向暴露。
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公开(公告)号：US20110297997A1
公开(公告)日：2011-12-08
申请号：US13052248
申请日：2011-03-21
IPC分类号： H01L33/38
CPC分类号： H01L33/44 , H01L33/38 , H01L33/486 , H01L33/50 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface, and a light emitting layer. The first electrode is provided on a region including the light emitting layer on the second major surface. The second electrode is provided on the second major surface and interposed in the first electrode in a planar view.
摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和 第二绝缘层。 半导体层包括第一主表面，与第一主表面相对的第二主表面和发光层。 第一电极设置在包括第二主表面上的发光层的区域上。 第二电极设置在第二主表面上并且以平面视图插入第一电极中。
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