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    Semiconductor light emitting device
    6.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08692279B2

    公开(公告)日：2014-04-08

    申请号：US13052248

    申请日：2011-03-21

    申请人： Miyuki Izuka ,  Yosuke Akimoto ,  Akihiro Kojima ,  Yoshiaki Sugizaki

    发明人： Miyuki Izuka ,  Yosuke Akimoto ,  Akihiro Kojima ,  Yoshiaki Sugizaki

    IPC分类号： H01L33/00

    CPC分类号： H01L33/44 ,  H01L33/38 ,  H01L33/486 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface, and a light emitting layer. The first electrode is provided on a region including the light emitting layer on the second major surface. The second electrode is provided on the second major surface and interposed in the first electrode in a planar view.

    摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和 第二绝缘层。 半导体层包括第一主表面，与第一主表面相对的第二主表面和发光层。 第一电极设置在包括第二主表面上的发光层的区域上。 第二电极设置在第二主表面上并且以平面视图插入第一电极中。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    7.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20110297998A1

    公开(公告)日：2011-12-08

    申请号：US13052250

    申请日：2011-03-21

    申请人： Yosuke Akimoto ,  Akihiro Kojima ,  Miyuki Izuka ,  Yoshiaki Sugizaki

    发明人： Yosuke Akimoto ,  Akihiro Kojima ,  Miyuki Izuka ,  Yoshiaki Sugizaki

    IPC分类号： H01L33/36 ,  H01L21/66

    CPC分类号： H01L33/62 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface and a light emitting layer. An edge of a part of the first interconnect layer is exposed laterally from the first insulating layer and the second insulating layer.

    摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和第二金属柱 绝缘层。 半导体层包括第一主表面，与第一主表面相对的第二主表面和发光层。 第一互连层的一部分的边缘从第一绝缘层和第二绝缘层横向暴露。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    8.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20110297997A1

    公开(公告)日：2011-12-08

    申请号：US13052248

    申请日：2011-03-21

    申请人： Miyuki Izuka ,  Yosuke Akimoto ,  Akihiro Kojima ,  Yoshiaki Sugizaki

    发明人： Miyuki Izuka ,  Yosuke Akimoto ,  Akihiro Kojima ,  Yoshiaki Sugizaki

    IPC分类号： H01L33/38

    CPC分类号： H01L33/44 ,  H01L33/38 ,  H01L33/486 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface, and a light emitting layer. The first electrode is provided on a region including the light emitting layer on the second major surface. The second electrode is provided on the second major surface and interposed in the first electrode in a planar view.

    摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和 第二绝缘层。 半导体层包括第一主表面，与第一主表面相对的第二主表面和发光层。 第一电极设置在包括第二主表面上的发光层的区域上。 第二电极设置在第二主表面上并且以平面视图插入第一电极中。

    Semiconductor light emitting device and method for manufacturing same
    10.
    发明授权
    Semiconductor light emitting device and method for manufacturing same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US09153746B2

    公开(公告)日：2015-10-06

    申请号：US13601568

    申请日：2012-08-31

    申请人： Akihiro Kojima ,  Yosuke Akimoto ,  Hideyuki Tomizawa ,  Hideko Mukaida ,  Miyoko Shimada ,  Yoshiaki Sugizaki ,  Hideto Furuyama

    发明人： Akihiro Kojima ,  Yosuke Akimoto ,  Hideyuki Tomizawa ,  Hideko Mukaida ,  Miyoko Shimada ,  Yoshiaki Sugizaki ,  Hideto Furuyama

    IPC分类号： H01L33/52 ,  H01L33/00 ,  H01L33/38 ,  H01L21/50

    CPC分类号： H01L33/486 ,  H01L33/387 ,  H01L33/62

    摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.

    摘要翻译： 根据实施例，半导体发光器件包括具有发光层的半导体层。 该装置还包括设置在包括发光层的第一区域上的p侧电极; 设置在不包括发光层的第二区域层上的n侧电极; 以及具有与p侧电极连通的第一开口的第一绝缘膜和与n侧电极连通的第二开口。 p侧互连设置在第一绝缘膜上，并通过第一开口与p侧电极电连接。 n侧互连设置在第一绝缘膜上，并通过第二开口与n侧电极电连接。 p侧互连具有向n侧互连突出的多个突出部，并且n侧互连具有在p侧互连的突出部之间延伸的多个部分。