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    SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
    1.
    发明申请
    SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
    含硫酸钠聚合物，耐腐蚀组合物和图案处理

    公开(公告)号：US20090269696A1

    公开(公告)日：2009-10-29

    申请号：US12428933

    申请日：2009-04-23

    申请人： Youichi OHSAWA ,  Jun HATAKEYAMA ,  Seiichiro TACHIBANA ,  Takeshi KINSHO

    发明人： Youichi OHSAWA ,  Jun HATAKEYAMA ,  Seiichiro TACHIBANA ,  Takeshi KINSHO

    IPC分类号： G03F7/20 ,  C08F214/18 ,  G03F7/004

    CPC分类号： G03F7/0045 ,  C08F220/18 ,  C08F220/28 ,  C08F220/30 ,  C08F220/38 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2041 ,  Y10S430/143 ,  Y10S430/167

    摘要： A polymer comprising recurring units having formulae (1), (2) and (3) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, CH3 or CF3, Rf is H, F, CF3 or C2F5, A is an optionally fluorine or oxygen-substituted divalent organic group, R2, R3 and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or may form a ring with the sulfur atom, N=0-2, R8 is H or alkyl, B is a single bond or optionally oxygen-substituted divalent organic group, a=0-3, b=1-3, and X is an acid labile group. The polymer generates a strong sulfonic acid which provides for effective cleavage of acid labile groups in a chemically amplified resist composition.

    摘要翻译： 提供了包含具有式（1），（2）和（3）的重复单元的聚合物以及包含其的化学放大抗蚀剂组合物。 R 1是H，F，CH 3或CF 3，R f是H，F，CF 3或C 2 F 5，A是任选氟或氧取代的二价有机基团，R 2，R 3和R 4是烷基，烯基，氧代烷基，芳基，芳烷基或芳氧基烷基 或者可以与硫原子形成环，N = O-2，R 8是H或烷基，B是单键或任选的氧取代的二价有机基团，a = 0-3，b = 1-3，和 X是酸不稳定组。 该聚合物产生强的磺酸，其提供化学增强抗蚀剂组合物中酸不稳定基团的有效切割。

    NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS
    4.
    发明申请
    NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS 有权
    新型磺酸盐，聚合物，聚合物的生产方法，耐腐蚀组合物和方法

    公开(公告)号：US20110189607A1

    公开(公告)日：2011-08-04

    申请号：US13013506

    申请日：2011-01-25

    申请人： Masaki OHASHI ,  Satoshi WATANABE ,  Youichi OHSAWA ,  Keiichi MASUNAGA ,  Takeshi KINSHO

    发明人： Masaki OHASHI ,  Satoshi WATANABE ,  Youichi OHSAWA ,  Keiichi MASUNAGA ,  Takeshi KINSHO

    IPC分类号： G03F7/004 ,  G03F7/20 ,  C07C69/54 ,  C08F220/38

    CPC分类号： C07C69/54 ,  C08F220/38 ,  G03F7/004 ,  G03F7/20

    摘要： There is disclosed a sulfonium salt represented by the following general formula (1). In the formula, X and Y each represents a group having a polymerizable functional group; Z represents a divalent hydrocarbon group having 1 to 33 carbon atoms optionally containing a hetero atom; R1 represents a divalent hydrocarbon group having 1 to 36 carbon atoms optionally containing a hetero atom; and R2 and R3 each represents a monovalent hydrocarbon group having 1 to 30 carbon atoms optionally containing a hetero atom or R2 and R3 may be bonded with each other to form a ring together with a sulfur atom in the formula. There can be provided a sulfonium salt usable as a resist composition providing high resolution and excellent in LER in photolithography using a high energy beam such as an ArF excimer laser, an EUV light and an electron beam as a light source, a polymer obtained from the sulfonium salt, a resist composition containing the polymer and a patterning process using the resist composition.

    摘要翻译： 公开了由以下通式（1）表示的锍盐。 在该式中，X和Y各自表示具有聚合性官能团的基团， Z表示任选含有杂原子的碳原子数1〜33的二价烃基; R1表示任选含有杂原子的碳原子数1〜36的二价烃基; R 2和R 3各自表示可以含有杂原子的具有1〜30个碳原子的一价烃基，或者，R 2和R 3可以相互结合，与式中的硫原子一起形成环。 可以提供可用作抗蚀剂组合物的锍盐，其使用诸如ArF准分子激光器，EUV光和电子束作为光源的高能束在光刻中提供高分辨率和优异的LER，从 锍盐，含有聚合物的抗蚀剂组合物和使用该抗蚀剂组合物的图案化工艺。

    POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS
    6.
    发明申请
    POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS 有权
    积极的组合物和绘图过程

    公开(公告)号：US20090186296A1

    公开(公告)日：2009-07-23

    申请号：US12355072

    申请日：2009-01-16

    申请人： Youichi OHSAWA ,  Takeshi Kinsho ,  Takeru Watanabe

    发明人： Youichi OHSAWA ,  Takeshi Kinsho ,  Takeru Watanabe

    IPC分类号： G03F7/004 ,  G03F7/20

    CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/2041 ,  Y10S430/111 ,  Y10S430/122

    摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution and forms a pattern with a satisfactory mask fidelity and a minimal LER. Herein R1 is H or methyl, m is 1 or 2, and n is 1 or 2.

    摘要翻译： 正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。 树脂（A）是包含由式（1）表示的特定重复单元的聚合物。 酸产生剂（B）是特定的锍盐化合物。 当通过光刻处理时，组合物的分辨率提高，并形成具有令人满意的掩模保真度和最小LER的图案。 其中R1为H或甲基，m为1或2，n为1或2。

    NOVEL SULFONATE AND ITS DERIVATIVE, PHOTOSENSITIVE ACID GENERATOR, AND RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME
    8.
    发明申请
    NOVEL SULFONATE AND ITS DERIVATIVE, PHOTOSENSITIVE ACID GENERATOR, AND RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME 有权
    新型磺化物及其衍生物，光敏酸发生器及其抗性组合物及其使用方法

    公开(公告)号：US20100209827A1

    公开(公告)日：2010-08-19

    申请号：US12706450

    申请日：2010-02-16

    申请人： Masaki OHASHI ,  Takeshi KINSHO ,  Youichi OHSAWA

    发明人： Masaki OHASHI ,  Takeshi KINSHO ,  Youichi OHSAWA

    IPC分类号： G03F7/20 ,  C07C309/04 ,  C07C69/003 ,  G03F7/004 ,  G03F1/00

    CPC分类号： G03F7/0045 ,  C07C25/18 ,  C07C309/08 ,  C07C309/12 ,  C07C381/12 ,  C07C2603/74 ,  G03F1/50 ,  G03F7/0046 ,  G03F7/0392

    摘要： There is disclosed a sulfonate shown by the following general formula (2). R1—COOC(CF3)2—CH2SO3−M+  (2) (In the formula, R1 represents a linear, a branched, or a cyclic monovalent hydrocarbon group having 1 to 50 carbon atoms optionally containing a hetero atom. M+ represents a cation.) There can be provided: a novel sulfonate which is effective for a chemically amplified resist composition having a sufficiently high solubility (compatibility) in a resist solvent and a resin, a good storage stability, a PED stability, a further wider depth of focus, a good sensitivity, in particular a high resolution and a good pattern profile form; a photosensitive acid generator; a resist composition using this; a photomask blank, and a patterning process.

    摘要翻译： 公开了下述通式（2）表示的磺酸盐。 R1-COOC（CF3）2-CH2SO3-M +（2）（式中，R1表示任选含有杂原子的碳原子数1〜50的直链状，支链状或环状的一价烃基，M +表示阳离子。 ）可以提供：对抗蚀剂溶剂和树脂具有足够高的溶解度（相容性）的化学放大型抗蚀剂组合物有效的新型磺酸盐，良好的储存稳定性，PED稳定性，进一步更宽的聚焦深度， 良好的灵敏度，特别是高分辨率和良好的图案轮廓形式; 光敏酸发生器; 使用该抗蚀剂组合物的抗蚀剂组合物 光掩模坯料和图案化工艺。

    POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS
    9.
    发明申请
    POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS 有权
    积极的组合物和绘图过程

    公开(公告)号：US20090186298A1

    公开(公告)日：2009-07-23

    申请号：US12355446

    申请日：2009-01-16

    申请人： Youichi OHSAWA ,  Takeshi Kinsho ,  Takeru Watanabe

    发明人： Youichi OHSAWA ,  Takeshi Kinsho ,  Takeru Watanabe

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  Y10S430/111 ,  Y10S430/122 ,  Y10S430/126 ,  Y10S430/143

    摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution and forms a pattern with a satisfactory mask fidelity and a minimal LER. Herein R1 is H or methyl, R2 is an acid labile group, R3 is CO2R4 when X is CH2, R3 is H or CO2R4 when X is O, R4 is a monovalent C1-C20 hydrocarbon group, and m is 1 or 2.

    摘要翻译： 正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。 树脂（A）是包含由式（1）表示的特定重复单元的聚合物。 酸产生剂（B）是特定的锍盐化合物。 当通过光刻处理时，组合物的分辨率提高，并形成具有令人满意的掩模保真度和最小LER的图案。 本文中R1是H或甲基，R2是酸不稳定基团，当X是CH2时，R3是CO2R4，当X是O时，R3是H，CO2R4，R4是一价C1-C20烃基，m是1或2。