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    Chemically amplified positive resist composition and patterning process
    1.
    发明申请
    Chemically amplified positive resist composition and patterning process 有权
    化学扩增正性抗蚀剂组成和图案化工艺

    公开(公告)号：US20060188810A1

    公开(公告)日：2006-08-24

    申请号：US11354204

    申请日：2006-02-15

    申请人： Youichi Ohsawa ,  Kazunori Maeda ,  Satoshi Watanabe

    发明人： Youichi Ohsawa ,  Kazunori Maeda ,  Satoshi Watanabe

    IPC分类号： G03C1/76

    CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

    摘要： A chemically amplified positive resist composition is provided comprising (A) a resin containing acid labile groups other than acetal type which changes its solubility in an alkaline developer as a result of the acid labile groups being eliminated under the action of acid and (B) specific sulfonium salts as a photoacid generator. The composition is improved in resolution and focus latitude, minimized in line width variation and profile degradation even on prolonged PED, improved in pattern profile after development, minimized in pattern feature size variation within the wafer plane by uneven development and thus best suited in the deep-UV lithography.

    摘要翻译： 提供一种化学放大正性抗蚀剂组合物，其包含（A）除了缩醛型以外的酸不稳定基团的树脂，其在酸性作用下由于酸不稳定基团被消除而改变其在碱性显影剂中的溶解度，（B）具体 锍盐作为光致酸发生剂。 组合物在分辨率和对焦纬度方面得到改善，即使在长时间的PED下也减少了线宽变化和轮廓退化，改善了显影后的图案轮廓，通过不平坦的发展使晶片平面内的图案特征尺寸变化最小化，因此最适合于深度 -UV光刻。

    Chemically amplified positive resist composition and patterning process
    3.
    发明授权
    Chemically amplified positive resist composition and patterning process 有权
    化学扩增正性抗蚀剂组成和图案化工艺

    公开(公告)号：US07335458B2

    公开(公告)日：2008-02-26

    申请号：US11354204

    申请日：2006-02-15

    申请人： Youichi Ohsawa ,  Kazunori Maeda ,  Satoshi Watanabe

    发明人： Youichi Ohsawa ,  Kazunori Maeda ,  Satoshi Watanabe

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

    摘要： A chemically amplified positive resist composition is provided comprising (A) a resin containing acid labile groups other than acetal type which changes its solubility in an alkaline developer as a result of the acid labile groups being eliminated under the action of acid and (B) specific sulfonium salts as a photoacid generator.The composition is improved in resolution and focus latitude, minimized in line width variation and profile degradation even on prolonged PED, improved in pattern profile after development, minimized in pattern feature size variation within the wafer plane by uneven development and thus best suited in the deep-UV lithography.

    摘要翻译： 提供一种化学放大正性抗蚀剂组合物，其包含（A）除了缩醛型以外的酸不稳定基团的树脂，其在酸性作用下由于酸不稳定基团被消除而改变其在碱性显影剂中的溶解度，（B）具体 锍盐作为光致酸发生剂。 组合物在分辨率和对焦纬度方面得到改善，即使在长时间的PED下也减少了线宽变化和轮廓退化，改善了显影后的图案轮廓，通过不平坦的发展使晶片平面内的图案特征尺寸变化最小化，因此最适合于深度 -UV光刻。

    Resist compositions and patterning process
    6.
    发明授权
    Resist compositions and patterning process 有权
    抗蚀剂组合物和图案化工艺

    公开(公告)号：US06338931B1

    公开(公告)日：2002-01-15

    申请号：US09637595

    申请日：2000-08-15

    申请人： Kazunori Maeda ,  Takeshi Nagata ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Jun Watanabe ,  Shigehiro Nagura

    发明人： Kazunori Maeda ,  Takeshi Nagata ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Jun Watanabe ,  Shigehiro Nagura

    IPC分类号： G03F7039

    CPC分类号： G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106

    摘要： A chemical amplification type resist composition contains as a photoacid generator a sulfonyldiazomethane compound of the formula (1): wherein R1 is C1-10 alkyl or C6-14 aryl, R2 is C1-6 alkyl, G is SO2 or CO, R3 is C1-10 alkyl or C6-14 aryl, p is an integer of 0 to 4, q is an integer of 1 to 5, 1≦p+q≦5, n is 1 or 2, m is 0 or 1, and n+m=2. The composition is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.

    摘要翻译： 化学放大型抗蚀剂组合物含有式（1）的磺酰基二氮甲烷化合物作为光酸产生剂：其中R1是C1-10烷基或C6-14芳基，R2是C1-6烷基，G是SO2或CO，R3是C1 -10烷基或C6-14芳基，p为0〜4的整数，q为1〜5的整数，1 <= p + q <= 5，n为1或2，m为0或1， n + m = 2。 该组合物特别适用于微细加工，因为包括改进的分辨率，最小化的线宽变化或形状退化的许多优点，即使在长期PED，涂布后的最小化碎片，显影和剥离以及显影后的改进的图案轮廓方面也是如此。

    Onium salts, photoacid generators, resist compositions, and patterning process
    8.
    发明授权
    Onium salts, photoacid generators, resist compositions, and patterning process 有权
    鎓盐，光酸产生剂，抗蚀剂组合物和图案化方法

    公开(公告)号：US06551758B2

    公开(公告)日：2003-04-22

    申请号：US09983154

    申请日：2001-10-23

    申请人： Youichi Ohsawa ,  Jun Watanabe ,  Kazunori Maeda

    发明人： Youichi Ohsawa ,  Jun Watanabe ,  Kazunori Maeda

    IPC分类号： G03F7004

    CPC分类号： C07C381/12 ,  C07C309/42 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/115 ,  Y10S430/122

    摘要： Onium salts of arylsulfonyloxybenzenesulfonate anions with iodonium or sulfonium cations are novel. A chemically amplified resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, improved focal latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.

    摘要翻译： 芳基磺酰氧基苯磺酸盐与碘鎓或锍阳离子的鎓盐是新颖的。 包含作为光致酸发生剂的鎓盐的化学放大抗蚀剂组合物特别适用于微细加工，特别是通过深紫外光刻技术，因为许多优点，包括改进的分辨率，改善的焦点纬度，最小化的线宽变化或甚至在长期PED下的形状退化 涂层，显影和剥离后的碎屑，以及显影后改进的图案轮廓。