公开(公告)号：US20120149183A1

公开(公告)日：2012-06-14

申请号：US13400364

申请日：2012-02-20

申请人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

发明人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

IPC分类号： H01L21/329

CPC分类号： H01L27/0814 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0002 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/11507 ,  H01L27/1203 ,  H01L27/224 ,  H01L27/2409 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/872 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/14 ,  H01L45/143 ,  H01L45/146 ,  H01L45/147

摘要： A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.

摘要翻译： 一种开关元件，包括第一半导体层，所述第一半导体层具有第一部分和第二部分; 第二半导体层，所述第二半导体层具有第一部分和第二部分; 设置在所述第一半导体层和所述第二半导体层之间的绝缘层; 与所述第一半导体层的所述第一部分接触的第一金属接触形成第一结，并与所述第二半导体层的所述第一部分接触形成第二结; 第二金属触点与第一半导体层的第二部分接触形成第三结，并与第二半导体层的第二部分接触形成第四结，其中第一结和第四结是肖特基接触， 第二结和第三结是欧姆接触。

公开(公告)号：US08158964B2

公开(公告)日：2012-04-17

申请号：US12502221

申请日：2009-07-13

申请人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

发明人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

IPC分类号： H01L29/02 ,  H01L29/47

CPC分类号： H01L27/0814 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0002 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/11507 ,  H01L27/1203 ,  H01L27/224 ,  H01L27/2409 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/872 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/14 ,  H01L45/143 ,  H01L45/146 ,  H01L45/147

摘要： A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.

公开(公告)号：US20110006276A1

公开(公告)日：2011-01-13

申请号：US12502221

申请日：2009-07-13

申请人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

发明人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

IPC分类号： H01L45/00 ,  H01L29/868 ,  H01L21/30

CPC分类号： H01L27/0814 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0002 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/11507 ,  H01L27/1203 ,  H01L27/224 ,  H01L27/2409 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/872 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/14 ,  H01L45/143 ,  H01L45/146 ,  H01L45/147

摘要： A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.

摘要翻译： 一种开关元件，包括第一半导体层，所述第一半导体层具有第一部分和第二部分; 第二半导体层，所述第二半导体层具有第一部分和第二部分; 设置在所述第一半导体层和所述第二半导体层之间的绝缘层; 与所述第一半导体层的所述第一部分接触的第一金属触点，形成第一结，并与所述第二半导体层的所述第一部分接触形成第二结; 第二金属触点与第一半导体层的第二部分接触形成第三结，并与第二半导体层的第二部分接触形成第四结，其中第一结和第四结是肖特基接触， 第二结和第三结是欧姆接触。

公开(公告)号：US08288749B2

公开(公告)日：2012-10-16

申请号：US13445351

申请日：2012-04-12

申请人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

发明人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

IPC分类号： H01L29/02 ,  H01L29/47

CPC分类号： H01L27/0814 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0002 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/11507 ,  H01L27/1203 ,  H01L27/224 ,  H01L27/2409 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/872 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/14 ,  H01L45/143 ,  H01L45/146 ,  H01L45/147

摘要： A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.

摘要翻译： 一种开关元件，包括第一半导体层，所述第一半导体层具有第一部分和第二部分; 第二半导体层，所述第二半导体层具有第一部分和第二部分; 设置在所述第一半导体层和所述第二半导体层之间的绝缘层; 与所述第一半导体层的所述第一部分接触的第一金属触点，形成第一结，并与所述第二半导体层的所述第一部分接触形成第二结; 第二金属触点与第一半导体层的第二部分接触形成第三结，并与第二半导体层的第二部分接触形成第四结，其中第一结和第四结是肖特基接触， 第二结和第三结是欧姆接触。

公开(公告)号：US20120199936A1

公开(公告)日：2012-08-09

申请号：US13445351

申请日：2012-04-12

申请人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

发明人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

IPC分类号： H01L29/868

CPC分类号： H01L27/0814 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0002 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/11507 ,  H01L27/1203 ,  H01L27/224 ,  H01L27/2409 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/872 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/14 ,  H01L45/143 ,  H01L45/146 ,  H01L45/147

摘要： A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.

公开(公告)号：US08198181B1

公开(公告)日：2012-06-12

申请号：US13400364

申请日：2012-02-20

申请人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

发明人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

IPC分类号： H01L21/425

CPC分类号： H01L27/0814 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0002 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/11507 ,  H01L27/1203 ,  H01L27/224 ,  H01L27/2409 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/872 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/14 ,  H01L45/143 ,  H01L45/146 ,  H01L45/147

摘要： A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.

公开(公告)号：US20100110764A1

公开(公告)日：2010-05-06

申请号：US12497767

申请日：2009-07-06

申请人： Ming Sun ,  Nurul Amin ,  Insik Jin ,  Young Pil Kim ,  Chulmin Jung ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Hai Li

发明人： Ming Sun ,  Nurul Amin ,  Insik Jin ,  Young Pil Kim ,  Chulmin Jung ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Hai Li

IPC分类号： G11C11/00 ,  H01L45/00

CPC分类号： H01L45/1233 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C13/0011 ,  G11C13/003 ,  G11C2213/74 ,  G11C2213/76 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1675

摘要： An electronic device that includes a first programmable metallization cell (PMC) that includes an active electrode; an inert electrode; and a solid electrolyte layer disposed between the active electrode and the inert electrode; and a second PMC that includes an active electrode; an inert electrode; and a solid electrolyte layer disposed between the active electrode and the inert electrode, wherein the first and second PMCs are electrically connected in anti-parallel.

摘要翻译： 一种电子设备，包括：包括有源电极的第一可编程金属化单元（PMC）; 惰性电极; 以及设置在所述有源电极和所述惰性电极之间的固体电解质层; 和包括有源电极的第二PMC; 惰性电极; 以及设置在所述有源电极和所述惰性电极之间的固体电解质层，其中所述第一和第二PMC以反平行电连接。

公开(公告)号：US08446752B2

公开(公告)日：2013-05-21

申请号：US12497767

申请日：2009-07-06

申请人： Ming Sun ,  Nurul Amin ,  Insik Jin ,  Young Pil Kim ,  Chulmin Jung ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Hai Li

发明人： Ming Sun ,  Nurul Amin ,  Insik Jin ,  Young Pil Kim ,  Chulmin Jung ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Hai Li

IPC分类号： G11C11/00

CPC分类号： H01L45/1233 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C13/0011 ,  G11C13/003 ,  G11C2213/74 ,  G11C2213/76 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1675

摘要： An electronic device that includes a first programmable metallization cell (PMC) that includes an active electrode; an inert electrode; and a solid electrolyte layer disposed between the active electrode and the inert electrode; and a second PMC that includes an active electrode; an inert electrode; and a solid electrolyte layer disposed between the active electrode and the inert electrode, wherein the first and second PMCs are electrically connected in anti-parallel.

摘要翻译： 一种电子设备，包括：包括有源电极的第一可编程金属化单元（PMC）; 惰性电极; 以及设置在所述有源电极和所述惰性电极之间的固体电解质层; 和包括有源电极的第二PMC; 惰性电极; 以及设置在所述有源电极和所述惰性电极之间的固体电解质层，其中所述第一和第二PMC以反平行电连接。

公开(公告)号：US20110002161A1

公开(公告)日：2011-01-06

申请号：US12497995

申请日：2009-07-06

申请人： Insik Jin ,  Nurul Amin ,  Wei Tian ,  Young Pil Kim ,  Venugopalan Vaithyanathan ,  Ming Sun ,  Chulmin Jung

发明人： Insik Jin ,  Nurul Amin ,  Wei Tian ,  Young Pil Kim ,  Venugopalan Vaithyanathan ,  Ming Sun ,  Chulmin Jung

IPC分类号： G11C11/00

CPC分类号： G11C13/0004 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0069 ,  G11C2213/75 ,  G11C2213/76

摘要： A memory cell comprising a phase-change memory cell stacked in series with a resistive switch. The resistive switch has a material switchable between a high resistance state and a low resistance state by the application of a voltage. A plurality of memory cells are used to form a memory array.

摘要翻译： 一种存储单元，包括与电阻开关串联堆叠的相变存储单元。 电阻开关具有可通过施加电压在高电阻状态和低电阻状态之间切换的材料。 使用多个存储单元来形成存储器阵列。

公开(公告)号：US07911833B2

公开(公告)日：2011-03-22

申请号：US12501796

申请日：2009-07-13

申请人： Nurul Amin ,  Insik Jin ,  Venugopalan Vaithyanathan ,  Wei Tian ,  YoungPil Kim

发明人： Nurul Amin ,  Insik Jin ,  Venugopalan Vaithyanathan ,  Wei Tian ,  YoungPil Kim

IPC分类号： G11C11/36

CPC分类号： H01L27/224 ,  G11C11/1659 ,  G11C13/0007 ,  G11C13/0011 ,  H01L27/1021

摘要： An anti-parallel diode structure and method of fabrication is presently disclosed. In some embodiments, an anti-parallel diode structure has a semiconductor region comprising a first insulator layer disposed between a first semiconductor layer and a second semiconductor layer. The semiconductor region can be bound on a first side by a first metal material and bound on a second side by a second metal material so that current below a predetermined value is prevented from passing through the semiconductor region and current above the predetermined value passes through the semiconductor region.

摘要翻译： 目前公开了一种反并联二极管结构和制造方法。 在一些实施例中，反并联二极管结构具有包括设置在第一半导体层和第二半导体层之间的第一绝缘体层的半导体区域。 半导体区域可以通过第一金属材料在第一侧上结合并且通过第二金属材料在第二侧上结合，使得防止低于预定值的电流通过半导体区域，并且超过预定值的电流通过 半导体区域。