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    Semiconductor devices and methods of fabricating the same
    6.
    发明授权
    Semiconductor devices and methods of fabricating the same 有权
    半导体器件及其制造方法

    公开(公告)号：US08405158B2

    公开(公告)日：2013-03-26

    申请号：US12832373

    申请日：2010-07-08

    申请人： Young-Bae Yoon ,  Jong-Hyuk Kim ,  Keonsoo Kim ,  Youngseop Rah ,  Yoonmoon Park

    发明人： Young-Bae Yoon ,  Jong-Hyuk Kim ,  Keonsoo Kim ,  Youngseop Rah ,  Yoonmoon Park

    IPC分类号： H01L27/088 ,  H01L29/76

    CPC分类号： H01L27/11521 ,  G11C16/0483 ,  H01L27/11519

    摘要： A semiconductor memory device and method of manufacturing the same, the device including string structures, the string structures including two or more adjacent string selection transistors connected in series to each other in a first direction and being spaced apart from one another in a second direction intersecting the first direction, the two or more string selection transistors having different threshold voltages; string selection lines, the string selection lines connecting the adjacent string selection transistors of the string structures in the second direction; and a bit line electrically connecting two or more adjacent string structures, wherein a device isolation layer between the adjacent string selection transistors in the second direction has recessed regions, and profiles of the recessed regions on respective sides of the string selection transistors are different from each other.

    摘要翻译： 一种半导体存储器件及其制造方法，该器件包括串联结构，串联结构包括两个或多个相邻的串选择晶体管，它们在第一方向上彼此串联连接，并且在第二方向上相互间隔开 所述第一方向，所述两个或更多个串选择晶体管具有不同的阈值电压; 串选择线，串串选择线，连接串结构的相邻串选择晶体管沿第二方向; 以及电连接两个或更多个相邻串结构的位线，其中在第二方向上的相邻串选择晶体管之间的器件隔离层具有凹陷区域，并且串选择晶体管的相应侧上的凹陷区域的轮廓与每个不同 其他。

    SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
    7.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20110038211A1

    公开(公告)日：2011-02-17

    申请号：US12832373

    申请日：2010-07-08

    申请人： Young-Bae Yoon ,  Jong-Hyuk Kim ,  Keonsoo Kim ,  Youngseop Rah ,  Yoonmoon Park

    发明人： Young-Bae Yoon ,  Jong-Hyuk Kim ,  Keonsoo Kim ,  Youngseop Rah ,  Yoonmoon Park

    IPC分类号： G11C16/04 ,  H01L27/088

    CPC分类号： H01L27/11521 ,  G11C16/0483 ,  H01L27/11519

    摘要： A semiconductor memory device and method of manufacturing the same, the device including string structures, the string structures including two or more adjacent string selection transistors connected in series to each other in a first direction and being spaced apart from one another in a second direction intersecting the first direction, the two or more string selection transistors having different threshold voltages; string selection lines, the string selection lines connecting the adjacent string selection transistors of the string structures in the second direction; and a bit line electrically connecting two or more adjacent string structures, wherein a device isolation layer between the adjacent string selection transistors in the second direction has recessed regions, and profiles of the recessed regions on respective sides of the string selection transistors are different from each other.

    摘要翻译： 一种半导体存储器件及其制造方法，该器件包括串联结构，串联结构包括两个或更多个相邻的串选择晶体管，它们在第一方向上彼此串联连接并且沿第二方向相互间隔开 所述第一方向，所述两个或更多个串选择晶体管具有不同的阈值电压; 串选择线，串串选择线，连接串结构的相邻串选择晶体管沿第二方向; 以及电连接两个或更多个相邻串结构的位线，其中在第二方向上的相邻串选择晶体管之间的器件隔离层具有凹陷区域，并且串选择晶体管的相应侧上的凹陷区域的轮廓与每个不同 其他。