Long wavelength surface-emitting semiconductor laser device and method for manufacturing the same

    公开(公告)号:US06621843B2

    公开(公告)日:2003-09-16

    申请号:US09842521

    申请日:2001-04-25

    IPC分类号: H01S500

    摘要: Disclosed is a surface-emitting laser device which eliminates an absorption loss of a p-type doped layer and reduces a scattering loss in a mirror layer and a carrier loss due to a current induction, comprising a first conductive type of semiconductor substrate; a bottom mirror layer formed on the semiconductor substrate and composed of a first conductive type of semiconductor layer; an active layer formed on the bottom mirror layer; an electron leakage barrier layer formed on the active layer and having an energy gap larger than the active layer; a current induction layer formed on the electron leakage barrier layer and a second conductive type of semiconductor layer; a current extension layer formed on the current induction layer and composed of the second conductive type of semiconductor layer; and a top mirror layer formed on the current extension layer, wherein the top mirror layer includes undoped center portion and its both end having the second conductive type of dopant diffusion region.

    Folded cavity laser
    2.
    发明授权

    公开(公告)号:US06584136B2

    公开(公告)日:2003-06-24

    申请号:US09882342

    申请日:2001-06-15

    IPC分类号: H01S308

    摘要: A folded cavity laser for generating a laser beam, includes a substrate provided with a distributed Bragg reflector (DBR); an active medium formed above the DBR for amplifying the laser beam; a first and a second mirrors formed on sides of the active medium, respectively, for making a horizontal cavity and for reflecting the amplified laser beam to the DBR; and a microlens, formed on the substrate opposite the DBR, for making the amplified laser beam astigmatic after passing therethrough.

    Compact optical logic operator array
    3.
    发明授权
    Compact optical logic operator array 失效
    紧凑型光逻辑运算器阵列

    公开(公告)号:US5770851A

    公开(公告)日:1998-06-23

    申请号:US713535

    申请日:1996-09-13

    IPC分类号: G02B6/43 G02F3/02 H01J40/14

    CPC分类号: G02F3/028 G02B6/43

    摘要: An improved parallel optical logic operator provides a path for light to pass through substrates in which a light source and an optical logic device are arranged. An optical logic device operates by transmission of light forwarded to a predetermined direction. This increases integration efficiency of the system by eliminating optical parts for changing the light path. A unit chip includes a laser array for generating a predetermined light in accordance with an electrical signal for a logic process, a laser array substrate on which via holes are formed for passing light, a microlens array for converting the light beam emitted from each laser device of the laser array into a parallel light beam for passing through the via hole, and an optical logic circuit array formed with a combination of an S-SEED which performs a logic function by transmission of the light signal through an optical window in S-SEED. A plurality of unit chips are laminated so that the light emitted from the laser device of one of the unit chips passes through an optical logic circuit of a corresponding unit chip and can be made incident on the optical logic circuit in the next unit chip through a via hole.

    摘要翻译: 改进的并行光逻辑运算器提供光通过其中布置光源和光逻辑器件的衬底的路径。 光逻辑器件通过传输转发到预定方向的光来操作。 这通过消除用于改变光路的光学部件来提高系统的集成效率。 单元芯片包括用于根据用于逻辑处理的电信号产生预定光的激光阵列,其上形成有用于通过光的通孔的激光阵列基板,用于转换从每个激光装置发射的光束的微透镜阵列 的激光器阵列的平行光束通过通孔;以及光学逻辑电路阵列,其形成有S-SEED的组合,S-SEED通过S-SEED中的光学窗口传输光信号来执行逻辑功能 。 多个单位芯片被层叠,使得从单个芯片之一的激光装置发射的光通过相应的单元芯片的光学逻辑电路,并且可以通过一个单元芯片入射到下一个单元芯片中的光学逻辑电路上 通孔。

    Optical controlled resonant tunneling diode
    4.
    发明授权
    Optical controlled resonant tunneling diode 失效
    光控谐振隧道二极管

    公开(公告)号:US5939729A

    公开(公告)日:1999-08-17

    申请号:US976776

    申请日:1997-11-24

    摘要: The present invention relates to a semiconductor photoelectric device including a InAs layer formed to monoatomic thickness sandwiched between spacer layers adjacent to an emitter to maximize a difference in energy between two quantum states in accumulation layer of a resonant tunneling diode having a double barrier structure, resulting in separating the resonant tunneling current determined by two quantum states of the triangular well in accumulation layer of resonant tunneling diode, even when light of a low intensity is irradiated to the surface of the resonant tunneling diode. Thus, there is provided an optical controlled resonant tunneling diode, making it possible to manufacturing a switching device for controlling an electric signal using light source by adjusting, using light, the resonant tunneling determined by an excited state of the triangular well.

    摘要翻译: 本发明涉及一种半导体光电器件,其包括形成为单原子厚度的InAs层,夹在与发射极相邻的间隔层之间,以使具有双重屏障结构的谐振隧道二极管的累积层中的两个量子态之间的能量差最大化,从而产生 在谐振隧道二极管的累积层中分离由三角形阱的两个量子态确定的谐振隧穿电流,即使当低强度的光照射到谐振隧穿二极管的表面时。 因此,提供了一种光控谐振隧道二极管,使得可以通过使用光调节由三角形阱的激发状态确定的谐振隧穿来制造用于使用光源控制电信号的开关装置。

    Method for producing a hydrogenated vertical-cavity surface-emitting
laser
    5.
    发明授权
    Method for producing a hydrogenated vertical-cavity surface-emitting laser 失效
    用于制造氢化垂直腔表面发射激光器的方法

    公开(公告)号:US5773319A

    公开(公告)日:1998-06-30

    申请号:US842960

    申请日:1997-04-25

    摘要: A method for producing a vertical-cavity surface-emitting laser, includes the steps of: forming a bottom mirror layer, an active layer and a top mirror layer on a semiconductor substrate; forming an antireflection layer on a rear surface of the semiconductor substrate; selectively etching peripheral portions of the antireflection layer to form a first electrode; defining laser emission portions through etching processing; forming a hydrogenated barrier over an entire surface of the resultant structure; forming a post; forming a passivation layer through the hydrogenating of the exposed top mirror layer and the portions of the active layer; forming a planarization film after the partial exposure of the top mirror and forming a second electrode pad to which the exposed top mirror layer contacts.

    摘要翻译: 一种用于制造垂直腔表面发射激光器的方法,包括以下步骤:在半导体衬底上形成底镜层,有源层和顶镜层; 在半导体衬底的后表面上形成抗反射层; 选择性地蚀刻抗反射层的周边部分以形成第一电极; 通过蚀刻处理定义激光发射部分; 在所得结构的整个表面上形成氢化屏障; 组建岗位; 通过暴露的顶镜层和有源层的部分的氢化形成钝化层; 在顶部反射镜部分曝光之后形成平坦化膜,并形成露出的顶部反射镜层与之接触的第二电极焊盘。

    Wavelength demultiplexer without waveguide bending loss
    7.
    发明授权
    Wavelength demultiplexer without waveguide bending loss 失效
    波导解复用器无波导弯曲损耗

    公开(公告)号:US06347165B1

    公开(公告)日:2002-02-12

    申请号:US09416413

    申请日:1999-10-12

    IPC分类号: G02B626

    CPC分类号: G02B6/12011

    摘要: The present invention relates to a wavelength demultiplexer. More particularly, the present invention provides the wavelength demultiplexer with straight optical waveguide that minimizes the bending loss of optical waveguide caused in the wavelength demultiplexer. A wavelength demultiplexer with straight optical waveguide in accordance with the present invention comprises an optical power distributor, a plurality of optical waveguides, and an optical power combiner. The optical power distributor evenly divides multiplexed input light by intensity. The number of optical waveguide transmits the divided multiplexed light and causes constant optical path length differences among adjacent waveguides. The optical waveguide is straight optical waveguide and includes two parts of different effective refractive indices. The optical power combiner receives output signals of the plurality of optical waveguides and separates the output signals by phase.

    摘要翻译: 本发明涉及一种波长解复用器。 更具体地说,本发明提供了使波长解复用器中引起的光波导的弯曲损耗最小的直线光波导的波长解复用器。 根据本发明的具有直的光波导的波长解复用器包括光功率分配器,多个光波导和光功率组合器。 光功率分配器通过强度均匀分配多路输入光。 光波导的数量传输分割的多路复用光,并在相邻波导之间产生恒定的光程长度差。 光波导是直的光波导,并且包括不同有效折射率的两部分。 光功率组合器接收多个光波导的输出信号,并通过相分离输出信号。

    Three-dimensional cavity surface emitting laser structure and
fabrication method thereof
    8.
    发明授权
    Three-dimensional cavity surface emitting laser structure and fabrication method thereof 失效
    三维腔体表面发射激光器结构及其制造方法

    公开(公告)号:US5895224A

    公开(公告)日:1999-04-20

    申请号:US915298

    申请日:1997-08-20

    IPC分类号: H01S5/10 H01S5/183 H01L21/20

    摘要: A three-dimensional cavity surface emitting laser structure and a fabrication method thereof which are capable of effectively controlling the characteristic of the transverse mode by applying independent electrical field to a side wall of an active region and concentrating a current flow along, inside of the active region. The structure includes a protrusion portion of a bottom mirror region formed on a substrate, an insulation film formed in a sidewall of a laser post having an active region extended from the protrusion and a top mirror region, and a sidewall metal mirror layer electrically separated from n-type and p-type electrodes for independently applying an electric field.

    摘要翻译: 一种三维空腔表面发射激光器结构及其制造方法,其能够通过对有源区域的侧壁施加独立的电场并且沿着活动的内部集中电流来有效地控制横向模式的特性 地区。 该结构包括形成在基板上的底部反射镜区域的突出部分,形成在激光束的侧壁中的绝缘膜,其具有从突起延伸的有源区域和顶部反射镜区域,以及侧壁金属镜面层, 用于独立施加电场的n型和p型电极。

    Method of manufacturing polarization-controlled surface emitting laser
array
    9.
    发明授权
    Method of manufacturing polarization-controlled surface emitting laser array 失效
    制造偏振控制表面发射激光器阵列的方法

    公开(公告)号:US5888842A

    公开(公告)日:1999-03-30

    申请号:US919620

    申请日:1997-08-28

    摘要: A method for manufacturing a surface-emitting laser array device is disclosed. In order to control the polarization characteristics of the surface-emitting laser, the surface-emitting laser array device according to the present invention can be manufactured by alternately arranging the surface-emitting laser formed by inclining a cavity in the and direction in accordance with the row or the column direction of the surface-emitting laser, so that the polarization characteristics of the surface-emitting laser in two directions which are relatively perpendicular to each other may be obtained. According to the present invention, it has an advantageous effect that the interaction between the adjacent laser beams can be minimized with maintaining the symmetric feature of the lasing beam when manufacturing an integrated surface-emitting laser array device. Further, since the traveling direction of the lasing beam can be controlled depending upon the polarization characteristics, not only the optical interconnection or optical switching can easily be performed, but also the device can effectively be applied to the device, for example, the magneto-optic disk which is sensitive to the polarization characteristics.

    摘要翻译: 公开了一种用于制造表面发射激光器阵列器件的方法。 为了控制表面发射激光器的偏振特性,根据本发明的表面发射激光器阵列器件可以通过将通过将空腔倾斜而形成的表面发射激光器交替布置在<110>和<1 + E,ov 1 + EE 0>方向,从而可以获得表面发射激光器在彼此相对垂直的两个方向上的偏振特性 。 根据本发明,具有这样的有利效果:当制造集成的表面发射激光器阵列器件时,可以通过保持激光束的对称特征来最小化相邻激光束之间的相互作用。 此外,由于可以根据极化特性来控制激光束的行进方向,不仅可以容易地进行光互连或光切换,而且可以有效地将器件应用于器件,例如, 对偏振特性敏感的光盘。

    Ultrafast optical switching device having a double-junction multiple
quantum well structure
    10.
    发明授权
    Ultrafast optical switching device having a double-junction multiple quantum well structure 失效
    具有双结多量子阱结构的超快光开关器件

    公开(公告)号:US5448080A

    公开(公告)日:1995-09-05

    申请号:US274192

    申请日:1994-07-12

    摘要: Disclosed is an ultrafast optical switching device having two types of multiple quantum well structures to be connected with each other, the device comprising a semi-insulating substrate; and a first and a second multiple quantum well structure formed sequentially on the substrate and united with each other to produce a double-junction multiple quantum well structure. Each of the multiple quantum well structures has nonlinear optical effects and two life time constants present while switching off in the device. One of the life time constants corresponds to a short life time constant to be determined dependent on electrons in the double-junction multiple quantum well structure and the other of the life time constants corresponds to a long life time constant to be determined dependent on holes and lattices therein. The multiple quantum well structures are formed in such a manner that short life time constants thereof may be in-phase with each other and long life time constants thereof may be out-of-phase to each other. The multiple quantum well structures are formed differently from each other in composition.

    摘要翻译: 公开了一种具有彼此连接的两种类型的多量子阱结构的超快速光学开关器件,该器件包括半绝缘衬底; 以及在衬底上顺序地形成并彼此结合以产生双结多量子阱结构的第一和第二多量子阱结构。 多个量子阱结构中的每个都具有非线性光学效应,并且在器件中关断时存在两个寿命常数。 寿命常数之一对应于取决于双结多量子阱结构中的电子而确定的短寿命常数,而另一个寿命常数对应于取决于孔的长寿命时间常数, 格子。 多量子阱结构以这样的方式形成,使得其寿命短的常数可以彼此同相,并且其长寿命时间常数可能彼此不同相。 多个量子阱结构在组成上彼此不同地形成。