摘要:
A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
摘要:
A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
摘要:
A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
摘要:
A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
摘要:
An optical integrated circuit comprises a semiconductor body, a semiconductor optical waveguide located on the body, and a bipolar phototransistor located on and optically coupled to the waveguide. In a preferred embodiment, the base region of the transistor is configured to absorb radiation propagating in the waveguide, but the emitter and collector regions are both configured not to absorb the propagating radiation. In a further preferred embodiment, the waveguide is configured to guide the radiation along a propagation axis therein, and the transistor makes an elongated footprint along the waveguide, the footprint being elongated along the direction of the propagation axis. In another preferred embodiment, the footprint is at least three times longer along the propagation axis than along a direction perpendicular thereto.
摘要:
Apparatus including: a substrate layer having a substantially planar top surface; an optically conductive peak located and elongated on, and spanning a first thickness measured in a direction generally away from, the top surface; the optically conductive peak having first and second lateral walls each including distal and proximal lateral wall portions, the proximal lateral wall portions intersecting the top surface; and first and second sidewall layers located on the distal lateral wall portions, the sidewall layers not intersecting the top surface and spanning a second thickness that is less than the first thickness measured in the same direction.
摘要:
A signal receiver, such as an RF-matched filter receiver, includes an optical source (e.g. a mode-locked laser) providing an optical signal, and a first optical modulator to modulate the optical signal with a received RF signal and provide a modulated optical signal. A second optical modulator modulates the modulated optical signal with a reference signal and provides a twice modulated optical signal. The modulators may be Mach-Zehnder Modulators (MZM) and/or Indium Phosphide (InP) modulators. An optical detector receives the twice modulated optical signal and provides a detected signal, and a processing unit receives the detected signal and extracts or measures cross-correlation between the received RF signal and the reference signal.
摘要:
A method is provided for identifying a contaminant in a gaseous space. The method includes: generating a broadband optical waveform; shaping the optical waveform to match an expected waveform for a known contaminant; and transmitting the shaped optical waveform towards an unknown contaminant. Upon receiving a reflected optical waveform from the unknown contaminant, determining whether the unknown contaminant correlates to the known contaminant based on the reflected waveform.
摘要:
An apparatus having a topology that allows building complicated optical programmable arrays useful for manipulating the phase and/or amplitude of an optical signal. Sophisticated filtering and other optical signal processing functionality can be programmed into the array after a chip containing the array has been fabricated. This programming capability is analogous to that of electronic field programmable gate arrays (FPGA's). Apparatus described herein will provide a powerful tool for processing optical signals or very broadband electrical signals.