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公开(公告)号:US20050156195A1
公开(公告)日:2005-07-21
申请号:US11079166
申请日:2005-03-14
申请人: Young-Kai Chen , Lay-Lay Chua , Vincent Houtsma , Rose Kopf , Andreas Leven , Chun-Ting Liu , Wei-Jer Sung , Yang Yang
发明人: Young-Kai Chen , Lay-Lay Chua , Vincent Houtsma , Rose Kopf , Andreas Leven , Chun-Ting Liu , Wei-Jer Sung , Yang Yang
IPC分类号: H01L21/331 , H01L29/737 , H01L29/739 , H01L31/0328 , H01L31/0336
CPC分类号: H01L29/66318 , H01L29/7371
摘要: A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
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公开(公告)号:US07595249B2
公开(公告)日:2009-09-29
申请号:US12286239
申请日:2008-09-29
申请人: Young-Kai Chen , Lay-Lay Chua , Vincent Etienne Houtsma , Rose Fasano Kopf , Andreas Leven , Chun-Ting Liu , Wei-Jer Sung , Yang Yang
发明人: Young-Kai Chen , Lay-Lay Chua , Vincent Etienne Houtsma , Rose Fasano Kopf , Andreas Leven , Chun-Ting Liu , Wei-Jer Sung , Yang Yang
IPC分类号: H01L21/331 , H01L21/8222
CPC分类号: H01L29/66318 , H01L29/7371
摘要: A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
摘要翻译: 一种用于制造双极晶体管的方法,包括形成垂直的半导体层序列,在最后形成的半导体层上形成注入掩模,以及将掺杂离子注入到一个或多个半导体层的一部分中。 半导体层的序列包括集电极层,与集电极层接触的基极层和与基极层接触的发射极层。 植入使用其中植入掩模阻止掺杂剂离子渗入层序列的一部分的过程。
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公开(公告)号:US20090029536A1
公开(公告)日:2009-01-29
申请号:US12286239
申请日:2008-09-29
申请人: Young-Kai Chen , Lay-Lay Chua , Vincent Etienne Houtsma , Rose Fasano Kopf , Andreas Leven , Chun-Ting Liu , Wei-Jer Sung , Yang Yang
发明人: Young-Kai Chen , Lay-Lay Chua , Vincent Etienne Houtsma , Rose Fasano Kopf , Andreas Leven , Chun-Ting Liu , Wei-Jer Sung , Yang Yang
IPC分类号: H01L21/425
CPC分类号: H01L29/66318 , H01L29/7371
摘要: A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
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公开(公告)号:US06911716B2
公开(公告)日:2005-06-28
申请号:US10243369
申请日:2002-09-13
申请人: Young-Kai Chen , Lay-Lay Chua , Vincent Etienne Houtsma , Rose Fasano Kopf , Andreas Leven , Chun-Ting Liu , Wei-Jer Sung , Yang Yang
发明人: Young-Kai Chen , Lay-Lay Chua , Vincent Etienne Houtsma , Rose Fasano Kopf , Andreas Leven , Chun-Ting Liu , Wei-Jer Sung , Yang Yang
IPC分类号: H01L21/331 , H01L29/737 , H01L27/082
CPC分类号: H01L29/66318 , H01L29/7371
摘要: A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
摘要翻译: 一种用于制造双极晶体管的方法,包括形成垂直的半导体层序列,在最后形成的半导体层上形成注入掩模,以及将掺杂离子注入到一个或多个半导体层的一部分中。 半导体层的序列包括集电极层,与集电极层接触的基极层和与基极层接触的发射极层。 植入使用其中植入掩模阻止掺杂剂离子渗入层序列的一部分的过程。
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公开(公告)号:US20050230784A1
公开(公告)日:2005-10-20
申请号:US10341777
申请日:2003-01-14
申请人: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Lay-Lay Chua
发明人: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Lay-Lay Chua
CPC分类号: G02B6/10 , G02B6/12004 , G02B6/1221 , G02B6/26 , G02B2006/12038 , G02B2006/12061 , G02B2006/12069 , G02B2006/12097 , G02B2006/12176 , G02B2006/12197
摘要: The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II-VI and III-V semiconductors.
摘要翻译: 本发明提供一种使用包含富硅氮化硅的粘合剂层将电介质层粘附到金属,特别是惰性金属的方法。 在低于300℃的温度下实现良好的附着力,从而有助于制造含有II-VI和III-V半导体的半导体结构。
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公开(公告)号:US20050255692A1
公开(公告)日:2005-11-17
申请号:US11184232
申请日:2005-07-19
申请人: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Lay-Lay Chua
发明人: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Lay-Lay Chua
IPC分类号: H01L21/02 , H01L21/316 , H01L21/318 , H01L21/4763
CPC分类号: H01L21/3185 , H01L21/0217 , H01L21/02304 , H01L21/31612 , H01L28/65
摘要: The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II-VI and III-V semiconductors.
摘要翻译: 本发明提供一种使用包含富硅氮化硅的粘合剂层将电介质层粘附到金属,特别是惰性金属的方法。 在低于300℃的温度下实现良好的附着力,从而有助于制造含有II-VI和III-V半导体的半导体结构。
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公开(公告)号:US06610599B1
公开(公告)日:2003-08-26
申请号:US10175459
申请日:2002-06-19
申请人: Lay-Lay Chua , Chun-Ting Liu , Yang Yang
发明人: Lay-Lay Chua , Chun-Ting Liu , Yang Yang
IPC分类号: H01L2144
CPC分类号: H01L21/02063 , C11D3/3947 , C11D7/10 , C11D11/0047 , H01L21/31138 , H01L21/76814
摘要: A method for making an ICD or MEOD structure includes dry etching a structure to produce one or more via holes in an upper layer of the structure. The dry etching step stops on a metal layer that underlies the upper layer in the structure. The method also includes cleaning the dry etched structure with an aqueous solution that includes hydrogen peroxide and either an ammonium salt or an amine salt.
摘要翻译: 制造ICD或MEOD结构的方法包括干式蚀刻结构以在该结构的上层中产生一个或多个通孔。 干蚀刻步骤停止在结构中的上层下方的金属层上。 该方法还包括用包含过氧化氢和铵盐或胺盐的水溶液清洗干蚀刻结构。
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公开(公告)号:US07514359B2
公开(公告)日:2009-04-07
申请号:US11184232
申请日:2005-07-19
申请人: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Laylay Chua
发明人: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Laylay Chua
IPC分类号: H01L21/44
CPC分类号: H01L21/3185 , H01L21/0217 , H01L21/02304 , H01L21/31612 , H01L28/65
摘要: The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II-VI and III-V semiconductors.
摘要翻译: 本发明提供一种使用包含富硅氮化硅的粘合剂层将电介质层粘附到金属,特别是惰性金属的方法。 在低于300℃的温度下实现良好的附着力,从而有助于制造含有II-VI和III-V半导体的半导体结构。
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公开(公告)号:US06989579B2
公开(公告)日:2006-01-24
申请号:US10341777
申请日:2003-01-14
申请人: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Laylay Chua
发明人: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Laylay Chua
IPC分类号: H01L29/00
CPC分类号: G02B6/10 , G02B6/12004 , G02B6/1221 , G02B6/26 , G02B2006/12038 , G02B2006/12061 , G02B2006/12069 , G02B2006/12097 , G02B2006/12176 , G02B2006/12197
摘要: The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II–VI and III–V semiconductors.
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公开(公告)号:US20120001957A1
公开(公告)日:2012-01-05
申请号:US13172844
申请日:2011-06-30
申请人: Chun-Ting Liu , Hsu-Ping Tseng , Chi-Mao Hung , Wei-Min Sun , Wen-Pin Chiu , Pei-Lin Tien , Yan-Liang Wu , Ying Hua Hsu
发明人: Chun-Ting Liu , Hsu-Ping Tseng , Chi-Mao Hung , Wei-Min Sun , Wen-Pin Chiu , Pei-Lin Tien , Yan-Liang Wu , Ying Hua Hsu
CPC分类号: G09G3/344 , G09G3/2044 , G09G2360/16
摘要: An electrophoretic display and a driving method thereof are provided. The electrophoretic display includes a display panel, a storage unit and a timing controller. The display panel has a plurality of sub pixels. The storage unit stores a plurality of sets of multiple-grayscale driving waveforms, in which the driving voltage scales of driving waveforms corresponding to a same grayscale in the sets of multiple-grayscale driving waveforms are different from each other. The timing controller is coupled to the storage unit and the display panel and receives an image signal, and when the image signal transmits a multiple-grayscale frame, the timing controller sequentially adopts the sets of multiple-grayscale driving waveforms to drive the sub pixels.
摘要翻译: 提供电泳显示器及其驱动方法。 电泳显示器包括显示面板,存储单元和定时控制器。 显示面板具有多个子像素。 存储单元存储多组多灰阶驱动波形,其中在多个灰度级驱动波形的集合中对应于相同灰度的驱动波形的驱动电压标度彼此不同。 定时控制器耦合到存储单元和显示面板并接收图像信号,并且当图像信号发送多灰阶帧时,定时控制器顺序地采用多个灰阶驱动波形的集合来驱动子像素。
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