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公开(公告)号:US20050156195A1
公开(公告)日:2005-07-21
申请号:US11079166
申请日:2005-03-14
申请人: Young-Kai Chen , Lay-Lay Chua , Vincent Houtsma , Rose Kopf , Andreas Leven , Chun-Ting Liu , Wei-Jer Sung , Yang Yang
发明人: Young-Kai Chen , Lay-Lay Chua , Vincent Houtsma , Rose Kopf , Andreas Leven , Chun-Ting Liu , Wei-Jer Sung , Yang Yang
IPC分类号: H01L21/331 , H01L29/737 , H01L29/739 , H01L31/0328 , H01L31/0336
CPC分类号: H01L29/66318 , H01L29/7371
摘要: A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
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公开(公告)号:US20050230784A1
公开(公告)日:2005-10-20
申请号:US10341777
申请日:2003-01-14
申请人: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Lay-Lay Chua
发明人: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Lay-Lay Chua
CPC分类号: G02B6/10 , G02B6/12004 , G02B6/1221 , G02B6/26 , G02B2006/12038 , G02B2006/12061 , G02B2006/12069 , G02B2006/12097 , G02B2006/12176 , G02B2006/12197
摘要: The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II-VI and III-V semiconductors.
摘要翻译: 本发明提供一种使用包含富硅氮化硅的粘合剂层将电介质层粘附到金属,特别是惰性金属的方法。 在低于300℃的温度下实现良好的附着力,从而有助于制造含有II-VI和III-V半导体的半导体结构。
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公开(公告)号:US20050255692A1
公开(公告)日:2005-11-17
申请号:US11184232
申请日:2005-07-19
申请人: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Lay-Lay Chua
发明人: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Lay-Lay Chua
IPC分类号: H01L21/02 , H01L21/316 , H01L21/318 , H01L21/4763
CPC分类号: H01L21/3185 , H01L21/0217 , H01L21/02304 , H01L21/31612 , H01L28/65
摘要: The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II-VI and III-V semiconductors.
摘要翻译: 本发明提供一种使用包含富硅氮化硅的粘合剂层将电介质层粘附到金属,特别是惰性金属的方法。 在低于300℃的温度下实现良好的附着力,从而有助于制造含有II-VI和III-V半导体的半导体结构。
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公开(公告)号:US20050032323A1
公开(公告)日:2005-02-10
申请号:US10624038
申请日:2003-07-21
申请人: Young-Kai Chen , Rose Kopf , Wei-Jer Sung , Nils Weimann
发明人: Young-Kai Chen , Rose Kopf , Wei-Jer Sung , Nils Weimann
IPC分类号: H01L21/00 , H01L21/331 , H01L29/08 , H01L29/417 , H01L29/423 , H01L29/732 , H01L29/737
CPC分类号: H01L29/66318 , H01L29/0821 , H01L29/41708 , H01L29/42304 , H01L29/7371
摘要: A method for fabricating a bipolar transistor includes forming collector, base, and emitter semiconductor layers on a substrate such that the layers form a vertical sequence with respect to an adjacent surface of the substrate. The method includes etching away a portion of a top one of the semiconductor layers to expose a portion of the base semiconductor layer and then, growing semiconductor on the exposed portion of the base layer. The top one of the semiconductor layers is the layer of the sequence that is located farthest from the substrate. The growing causes grown semiconductor to laterally surround a vertical portion of the top one of the semiconductor layers.
摘要翻译: 制造双极晶体管的方法包括在基板上形成集电极,基极和发射极半导体层,使得这些层相对于基板的相邻表面形成垂直的顺序。 该方法包括蚀刻远离半导体层顶部的一部分以露出基底半导体层的一部分,然后在基底层的暴露部分上生长半导体。 半导体层中的顶部之一是距离衬底最远的序列层。 生长的原因使半导体横向围绕半导体层顶部的垂直部分。
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公开(公告)号:US07514359B2
公开(公告)日:2009-04-07
申请号:US11184232
申请日:2005-07-19
申请人: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Laylay Chua
发明人: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Laylay Chua
IPC分类号: H01L21/44
CPC分类号: H01L21/3185 , H01L21/0217 , H01L21/02304 , H01L21/31612 , H01L28/65
摘要: The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II-VI and III-V semiconductors.
摘要翻译: 本发明提供一种使用包含富硅氮化硅的粘合剂层将电介质层粘附到金属,特别是惰性金属的方法。 在低于300℃的温度下实现良好的附着力,从而有助于制造含有II-VI和III-V半导体的半导体结构。
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公开(公告)号:US06989579B2
公开(公告)日:2006-01-24
申请号:US10341777
申请日:2003-01-14
申请人: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Laylay Chua
发明人: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Laylay Chua
IPC分类号: H01L29/00
CPC分类号: G02B6/10 , G02B6/12004 , G02B6/1221 , G02B6/26 , G02B2006/12038 , G02B2006/12061 , G02B2006/12069 , G02B2006/12097 , G02B2006/12176 , G02B2006/12197
摘要: The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II–VI and III–V semiconductors.
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