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    Flat profile structures for bipolar transistors
    5.
    发明申请
    Flat profile structures for bipolar transistors 有权
    双极晶体管的平面结构

    公开(公告)号：US20050032323A1

    公开(公告)日：2005-02-10

    申请号：US10624038

    申请日：2003-07-21

    申请人： Young-Kai Chen ,  Rose Kopf ,  Wei-Jer Sung ,  Nils Weimann

    发明人： Young-Kai Chen ,  Rose Kopf ,  Wei-Jer Sung ,  Nils Weimann

    IPC分类号： H01L21/00 ,  H01L21/331 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/732 ,  H01L29/737

    CPC分类号： H01L29/66318 ,  H01L29/0821 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/7371

    摘要： A method for fabricating a bipolar transistor includes forming collector, base, and emitter semiconductor layers on a substrate such that the layers form a vertical sequence with respect to an adjacent surface of the substrate. The method includes etching away a portion of a top one of the semiconductor layers to expose a portion of the base semiconductor layer and then, growing semiconductor on the exposed portion of the base layer. The top one of the semiconductor layers is the layer of the sequence that is located farthest from the substrate. The growing causes grown semiconductor to laterally surround a vertical portion of the top one of the semiconductor layers.

    摘要翻译： 制造双极晶体管的方法包括在基板上形成集电极，基极和发射极半导体层，使得这些层相对于基板的相邻表面形成垂直的顺序。 该方法包括蚀刻远离半导体层顶部的一部分以露出基底半导体层的一部分，然后在基底层的暴露部分上生长半导体。 半导体层中的顶部之一是距离衬底最远的序列层。 生长的原因使半导体横向围绕半导体层顶部的垂直部分。

    Monlithically coupled waveguide and phototransistor
    7.
    发明申请
    Monlithically coupled waveguide and phototransistor 有权
    单片耦合波导和光电晶体管

    公开(公告)号：US20070014508A1

    公开(公告)日：2007-01-18

    申请号：US11180122

    申请日：2005-07-13

    申请人： Young-Kai Chen ,  Vincent Houtsma ,  Andreas Leven ,  Nils Weimann

    发明人： Young-Kai Chen ,  Vincent Houtsma ,  Andreas Leven ,  Nils Weimann

    IPC分类号： G02B6/12 ,  G02B6/30

    CPC分类号： G02B6/4204 ,  G02B6/30

    摘要： An optical integrated circuit comprises a semiconductor body, a semiconductor optical waveguide located on the body, and a bipolar phototransistor located on and optically coupled to the waveguide. In a preferred embodiment, the base region of the transistor is configured to absorb radiation propagating in the waveguide, but the emitter and collector regions are both configured not to absorb the propagating radiation. In a further preferred embodiment, the waveguide is configured to guide the radiation along a propagation axis therein, and the transistor makes an elongated footprint along the waveguide, the footprint being elongated along the direction of the propagation axis. In another preferred embodiment, the footprint is at least three times longer along the propagation axis than along a direction perpendicular thereto.

    摘要翻译： 光学集成电路包括半导体本体，位于本体上的半导体光波导和位于光学耦合到波导的双极光电晶体管。 在优选实施例中，晶体管的基极区被配置为吸收在波导中传播的辐射，但是发射极和集电极区域均被配置为不吸收传播辐射。 在另一优选实施例中，波导被配置为沿其中的传播轴引导辐射，并且晶体管沿着波导形成细长的占地面积，所述覆盖区沿着传播轴线的方向延伸。 在另一个优选实施例中，沿着传播轴线的距离比垂直于其的方向至少长三倍。

    Ridge and mesa optical waveguides
    8.
    发明申请
    Ridge and mesa optical waveguides 有权
    脊和台面光波导

    公开(公告)号：US20070230886A1

    公开(公告)日：2007-10-04

    申请号：US11394780

    申请日：2006-03-31

    申请人： Young-Kai Chen ,  Andreas Leven ,  Yang Yang

    发明人： Young-Kai Chen ,  Andreas Leven ,  Yang Yang

    IPC分类号： G02B6/10 ,  G02B6/00

    CPC分类号： G02B6/122 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/12097

    摘要： Apparatus including: a substrate layer having a substantially planar top surface; an optically conductive peak located and elongated on, and spanning a first thickness measured in a direction generally away from, the top surface; the optically conductive peak having first and second lateral walls each including distal and proximal lateral wall portions, the proximal lateral wall portions intersecting the top surface; and first and second sidewall layers located on the distal lateral wall portions, the sidewall layers not intersecting the top surface and spanning a second thickness that is less than the first thickness measured in the same direction.

    摘要翻译： 设备包括：具有基本平坦的顶表面的基底层; 位于并延伸并且跨越在大致远离顶表面的方向测量的第一厚度的光导体峰; 所述光导体峰具有第一和第二侧壁，每个侧壁包括远侧和近侧壁部分，所述近侧壁部分与所述顶表面相交; 以及位于所述远侧壁部分上的第一和第二侧壁层，所述侧壁层不与所述顶表面相交并跨越在相同方向上测量的小于所述第一厚度的第二厚度。

    Flat profile structures for bipolar transistors
    9.
    发明授权
    Flat profile structures for bipolar transistors 有权
    双极晶体管的平面结构

    公开(公告)号：US07541624B2

    公开(公告)日：2009-06-02

    申请号：US10624038

    申请日：2003-07-21

    申请人： Young-Kai Chen ,  Rose Fasano Kopf ,  Wei-Jer Sung ,  Nils Guenter Weimann

    发明人： Young-Kai Chen ,  Rose Fasano Kopf ,  Wei-Jer Sung ,  Nils Guenter Weimann

    IPC分类号： H01L21/00

    CPC分类号： H01L29/66318 ,  H01L29/0821 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/7371

    摘要： A method for fabricating a bipolar transistor includes forming collector, base, and emitter semiconductor layers on a substrate such that the layers form a vertical sequence with respect to an adjacent surface of the substrate. The method includes etching away a portion of a top one of the semiconductor layers to expose a portion of the base semiconductor layer and then, growing semiconductor on the exposed portion of the base layer. The top one of the semiconductor layers is the layer of the sequence that is located farthest from the substrate. The growing causes grown semiconductor to laterally surround a vertical portion of the top one of the semiconductor layers.

    摘要翻译： 制造双极晶体管的方法包括在基板上形成集电极，基极和发射极半导体层，使得这些层相对于基板的相邻表面形成垂直的顺序。 该方法包括蚀刻远离半导体层顶部的一部分以露出基底半导体层的一部分，然后在基底层的暴露部分上生长半导体。 半导体层中的顶部之一是距离衬底最远的序列层。 生长的原因使半导体横向围绕半导体层的顶部的垂直部分。

    Transistors amd methods for making the same
    10.
    发明申请
    Transistors amd methods for making the same 有权
    晶体管amd方法制作相同

    公开(公告)号：US20050269594A1

    公开(公告)日：2005-12-08

    申请号：US10859894

    申请日：2004-06-03

    申请人： Young-Kai Chen ,  Vincent Houtsma ,  Nils Weimann

    发明人： Young-Kai Chen ,  Vincent Houtsma ,  Nils Weimann

    IPC分类号： H01L21/331 ,  H01L21/8222 ,  H01L29/732 ,  H01L29/737 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

    CPC分类号： H01L29/66242 ,  H01L29/66318 ,  H01L29/7371

    摘要： Apparatus comprising: a first compound semiconductor composition layer doped to have a first charge carrier polarity; a second compound semiconductor composition layer doped to have a second charge carrier polarity and located on the first layer; a third compound semiconductor composition layer doped to have the first charge carrier polarity and located on the second layer; a base electrode on the second layer; and a spacer ring interposed between and defining a charge carrier access path distance between the base electrode and the third layer, the path distance being within a range of between about 200 Å and about 1000 Å. Techniques for making apparatus. Apparatus is useful as a heterobipolar transistor, particularly for high frequency applications.

    摘要翻译： 装置包括：掺杂以具有第一电荷载流子极性的第一化合物半导体组合物层; 第二化合物半导体组合物层，被掺杂以具有第二电荷载流子极性并位于第一层上; 第三化合物半导体组合物层，被掺杂以具有第一电荷载流子极性并位于第二层上; 第二层上的基极; 以及插入在基极和第三层之间并且限定基极和第三层之间的电荷载体存取路径距离的间隔环，路径距离在约和之间的范围内。 制造设备的技术。 器件可用作异双极晶体管，特别适用于高频应用。