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    Method of making an article comprising an oxide layer on a GaAs-based semiconductor body
    4.
    发明授权
    Method of making an article comprising an oxide layer on a GaAs-based semiconductor body 失效
    在GaAs基半导体本体上制造包含氧化物层的制品的方法

    公开(公告)号：US06271069B1

    公开(公告)日：2001-08-07

    申请号：US09122558

    申请日：1998-07-24

    申请人： Young-Kai Chen ,  Alfred Yi Cho ,  William Scott Hobson ,  Minghwei Hong ,  Jenn-Ming Kuo ,  Jueinai Raynien Kwo ,  Donald Winslow Murphy ,  Fan Ren

    发明人： Young-Kai Chen ,  Alfred Yi Cho ,  William Scott Hobson ,  Minghwei Hong ,  Jenn-Ming Kuo ,  Jueinai Raynien Kwo ,  Donald Winslow Murphy ,  Fan Ren

    IPC分类号： H01L2976

    CPC分类号： H01L29/517 ,  C23C14/08 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/66522 ,  H01L29/78 ,  H01L33/44 ,  H01S5/028

    摘要： Disclosed are a method of making GaAs-based enhancement-type MOS-FETs, and articles (e.g., GaAs-based ICs) that comprise such a MOS-FET. The MOS-FETs are planar devices, without etched recess or epitaxial re-growth, with gate oxide that is primarily Ga2O3, and with low midgap interface state density (e.g., at most 1×1011 cm−2 eV−1 at 20° C.). The method involves ion implantation, implant activation in an As-containing atmosphere, surface reconstruction, and in situ deposition of the gate oxide. In preferred embodiments, no processing step subsequent to gate oxide formation is carried out above 300° C. in air, or above about 700° C. in UHV. The method makes possible fabrication of planar enhancement-type MOS-FETs having excellent characteristics, and also makes possible fabrication of complementary MOS-FETs, as well as ICs comprising MOS-FETs and MES-FETs. The method includes deposition of gate oxide of overall composition GaxAyOz, where Ga substantially is in the 3+ oxidation state, A is one or more electropositive stabilizer element adapted for stabilizing Ga in the 3+ oxidation state, x is greater than or equal to zero, z is selected to satisfy the requirement that both Ga and A are substantially fully oxidized, and y/(x+y) is greater than 0.1.

    摘要翻译： 公开了制造基于GaAs的增强型MOS-FET的方法以及包括这种MOS-FET的制品（例如，基于GaAs的IC）。 MOS-FET是没有蚀刻凹槽或外延再生长的平面器件，其栅极氧化物主要是Ga 2 O 3，并且具有低的中间隙界面态密度（例如，在20℃下至多为1×10 11 cm -2 eV-1） 。 该方法涉及离子注入，在含As气氛中的注入活化，表面重构和栅极氧化物的原位沉积。 在优选的实施方案中，栅极氧化物形成之后的处理步骤在高于300℃的空气中或在高于约700℃的UHV中进行。 该方法可以制造具有优异特性的平面增强型MOS-FET，并且还可以制造互补MOS-FET以及包括MOS-FET和MES-FET的IC。 该方法包括沉积总体组成为GaxAyOz的栅极氧化物，其中Ga基本上处于3+氧化态，A是一种或多种适用于稳定3+氧化态的Ga的正电荷稳定剂元素，x大于或等于零 选择z以满足Ga和A基本上完全氧化，y /（x + y）大于0.1的要求。

    Apparatus comprising optical pulse-generating means
    6.
    发明授权
    Apparatus comprising optical pulse-generating means 失效
    装置包括光脉冲发生装置

    公开(公告)号：US5040183A

    公开(公告)日：1991-08-13

    申请号：US553311

    申请日：1990-07-20

    申请人： Young-Kai Chen ,  Ming-Chiang Wu

    发明人： Young-Kai Chen ,  Ming-Chiang Wu

    IPC分类号： H01S5/00 ,  H01S5/026 ,  H01S5/065 ,  H01S5/343

    CPC分类号： B82Y20/00 ,  H01S5/065 ,  H01S5/026 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/3434

    摘要： Disclosed is apparatus that comprises integrated colliding pulse mode-locked means for generating ultrashort optical pulses. The means advantageously are capable of producing transform-limited (or nearly transform-limited) pulses. Several exemplary embodiments are disclosed. Exemplarily the invention is embodied in InP-based integrated means that produced 1.4 ps pulses at a 32.6 GHz repetition rate.

    摘要翻译： 公开了包括用于产生超短光脉冲的集成冲击脉冲锁模装置的装置。 该装置有利地能够产生变换限制（或几乎变换限制）的脉冲。 公开了几个示例性实施例。 示例性地，本发明体现在基于InP的集成装置中，其以32.6GHz重复率产生1.4ps脉冲。

    Photonic match filter
    8.
    发明授权
    Photonic match filter 有权
    光子匹配滤波器

    公开(公告)号：US08238017B2

    公开(公告)日：2012-08-07

    申请号：US12641601

    申请日：2009-12-18

    申请人： Kun-Yii Tu ,  Ting-Chen Hu ,  Young-Kai Chen

    发明人： Kun-Yii Tu ,  Ting-Chen Hu ,  Young-Kai Chen

    IPC分类号： G02F1/01

    CPC分类号： G02F1/011 ,  G02F1/0123 ,  G02F2201/122 ,  G02F2203/50 ,  H04B10/60

    摘要： An optical path is configured to propagate an input optical signal. A plurality of electrodes are configured to produce a plurality of discrete phase shifts on the optical signal. An output optical signal is phase-shifted with respect to the input optical signal by a sum of the plurality of discrete phase shifts.

    摘要翻译： 光路被配置为传播输入光信号。 多个电极被配置为在光信号上产生多个离散相移。 输出光信号相对于输入光信号通过多个离散相移的和进行相移。

    Multiple-Input Method And Apparatus Of Free-Space Optical Communication
    10.
    发明申请
    Multiple-Input Method And Apparatus Of Free-Space Optical Communication 有权
    自由空间光通信的多输入法和装置

    公开(公告)号：US20120008961A1

    公开(公告)日：2012-01-12

    申请号：US12915506

    申请日：2010-10-29

    申请人： Young-Kai Chen ,  Noriaki Kaneda ,  Alex Pidwerbetsky

    发明人： Young-Kai Chen ,  Noriaki Kaneda ,  Alex Pidwerbetsky

    IPC分类号： H04B10/00

    CPC分类号： H04B10/1121 ,  H04B10/613

    摘要： An approach is provided that uses diversity to compensate fading of free-space optical (FSO) signals propagating through an environment characterized by atmospheric scintillation. One embodiment involves collecting at least one FSO beam, demultiplexing the beam by wavelength into at least two sub-beams, detecting each sub-beam to produce an electrical output therefrom, and recovering a signal using complementary information from at least two of the electrical outputs. Another embodiment involves collecting the FSO beam onto an array of spatially separated sub-apertures, detecting the light entering each sub-aperture to produce an electrical output therefrom, and recovering a signal using complementary information from at least two of the electrical outputs. This second embodiment enables both electronic adaptive processing to coherently integrate across the sub-apertures and in the case of multiple transmit apertures a free space optical Multiple Input Multiple Output (MIMO) system.

    摘要翻译： 提供了一种使用分集来补偿通过大气闪烁特征的环境传播的自由空间光（FSO）信号的衰落的方法。 一个实施例涉及收集至少一个FSO波束，通过波长将光束解复用为至少两个子波束，检测每个子波束以产生电输出，以及使用来自至少两个电输出的补充信息来恢复信号 。 另一个实施例涉及将FSO光束收集到空间上分离的子孔径阵列上，检测进入每个子孔径的光以产生其电输出，以及使用来自至少两个电输出的补充信息来恢复信号。 该第二实施例使得电子自适应处理能够在子孔径之间相干地集成，并且在多个发射孔径的情况下使得自由空间光学多输入多输出（MIMO）系统。