利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

91 条记录 (耗时 0.025 秒)

    Flat profile structures for bipolar transistors
    1.
    发明授权
    Flat profile structures for bipolar transistors 有权
    双极晶体管的平面结构

    公开(公告)号：US07541624B2

    公开(公告)日：2009-06-02

    申请号：US10624038

    申请日：2003-07-21

    申请人： Young-Kai Chen ,  Rose Fasano Kopf ,  Wei-Jer Sung ,  Nils Guenter Weimann

    发明人： Young-Kai Chen ,  Rose Fasano Kopf ,  Wei-Jer Sung ,  Nils Guenter Weimann

    IPC分类号： H01L21/00

    CPC分类号： H01L29/66318 ,  H01L29/0821 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/7371

    摘要： A method for fabricating a bipolar transistor includes forming collector, base, and emitter semiconductor layers on a substrate such that the layers form a vertical sequence with respect to an adjacent surface of the substrate. The method includes etching away a portion of a top one of the semiconductor layers to expose a portion of the base semiconductor layer and then, growing semiconductor on the exposed portion of the base layer. The top one of the semiconductor layers is the layer of the sequence that is located farthest from the substrate. The growing causes grown semiconductor to laterally surround a vertical portion of the top one of the semiconductor layers.

    摘要翻译： 制造双极晶体管的方法包括在基板上形成集电极，基极和发射极半导体层，使得这些层相对于基板的相邻表面形成垂直的顺序。 该方法包括蚀刻远离半导体层顶部的一部分以露出基底半导体层的一部分，然后在基底层的暴露部分上生长半导体。 半导体层中的顶部之一是距离衬底最远的序列层。 生长的原因使半导体横向围绕半导体层的顶部的垂直部分。

    Wireless transmitters
    5.
    发明申请
    Wireless transmitters 审中-公开
    无线发射机

    公开(公告)号：US20090324250A1

    公开(公告)日：2009-12-31

    申请号：US12317090

    申请日：2008-12-19

    申请人： Young-Kai Chen ,  Vincent Etienne Houtsma ,  Ting-Chen Hu ,  Nils Guenter Weimann

    发明人： Young-Kai Chen ,  Vincent Etienne Houtsma ,  Ting-Chen Hu ,  Nils Guenter Weimann

    IPC分类号： H04B10/04

    CPC分类号： H04B10/00 ,  H04B2210/006

    摘要： A wireless transmitter includes an optical modulator, an optical power splitter, a plurality of electrical drivers, and a plurality of antennas. The optical power splitter has a plurality of optical outputs and has an optical input connected to receive a modulated optical carrier from the optical modulator. Each driver is configured to detect a portion of the modulated optical carrier output by one of the optical outputs of the optical power splitter. Each antenna is connected to be driven by one of the electrical drivers.

    摘要翻译： 无线发射机包括光调制器，光功率分配器，多个电驱动器和多个天线。 光功率分配器具有多个光输出，并具有连接以从光调制器接收调制光载波的光输入。 每个驱动器被配置为检测由光功率分配器的光输出之一输出的调制光载波的一部分。 每个天线被连接以由其中一个电驱动器驱动。

    Monlithically coupled waveguide and phototransistor
    6.
    发明授权
    Monlithically coupled waveguide and phototransistor 有权
    单片耦合波导和光电晶体管

    公开(公告)号：US07471855B2

    公开(公告)日：2008-12-30

    申请号：US11180122

    申请日：2005-07-13

    申请人： Young-Kai Chen ,  Vincent Etienne Houtsma ,  Andreas Bertold Leven ,  Nils Guenter Weimann

    发明人： Young-Kai Chen ,  Vincent Etienne Houtsma ,  Andreas Bertold Leven ,  Nils Guenter Weimann

    IPC分类号： G02B6/12

    CPC分类号： G02B6/4204 ,  G02B6/30

    摘要： An optical integrated circuit comprises a semiconductor body, a semiconductor optical waveguide located on the body, and a bipolar phototransistor located on and optically coupled to the waveguide. In a preferred embodiment, the base region of the transistor is configured to absorb radiation propagating in the waveguide, but the emitter and collector regions are both configured not to absorb the propagating radiation. In a further preferred embodiment, the waveguide is configured to guide the radiation along a propagation axis therein, and the transistor makes an elongated footprint along the waveguide, the footprint being elongated along the direction of the propagation axis. In another preferred embodiment, the footprint is at least three times longer along the propagation axis than along a direction perpendicular thereto.

    摘要翻译： 光学集成电路包括半导体本体，位于本体上的半导体光波导和位于光学耦合到波导的双极光电晶体管。 在优选实施例中，晶体管的基极区被配置为吸收在波导中传播的辐射，但是发射极和集电极区域均被配置为不吸收传播辐射。 在另一优选实施例中，波导被配置为沿其中的传播轴引导辐射，并且晶体管沿着波导形成细长的占地面积，所述覆盖区沿着传播轴线的方向延伸。 在另一个优选实施例中，沿着传播轴线的距离比垂直于其的方向至少长三倍。

    Dissipative isolation frames for active microelectronic devices, and methods of making such dissipative isolation frames
    8.
    发明授权
    Dissipative isolation frames for active microelectronic devices, and methods of making such dissipative isolation frames 有权
    用于有源微电子器件的耗散隔离框架，以及制造这种耗散隔离框架的方法

    公开(公告)号：US07170147B2

    公开(公告)日：2007-01-30

    申请号：US10628748

    申请日：2003-07-28

    申请人： Young-Kai Chen ,  Vincent Etienne Houtsma ,  Nils Guenter Weimann

    发明人： Young-Kai Chen ,  Vincent Etienne Houtsma ,  Nils Guenter Weimann

    IPC分类号： H00L23/552 ,  G00R21/26 ,  H00B11/02

    CPC分类号： H01L23/544 ,  H01L23/552 ,  H01L23/66 ,  H01L2223/54473 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  Y10S438/953 ,  H01L2924/00

    摘要： Microelectronic apparatus having protection against high frequency crosstalk radiation, comprising: a planar insulating substrate; an active semiconductor electronic device located over a first region of the insulating substrate; and a doped semiconductor located in a second region of the insulating substrate substantially surrounding the first region. Apparatus further comprising a dissipative conductor overlaying and adjacent to the doped semiconductor. Apparatus additionally comprising metallic test probe contacts making electrical connections with the active semiconductor electronic device. Application of the apparatus to dissipate crosstalk radiation having a center frequency within a range between about 1 gigahertz and about 1,000 gigahertz. Methods for making the apparatus.

    摘要翻译： 具有防止高频串扰辐射的微电子装置，包括：平面绝缘基板; 位于所述绝缘基板的第一区域上方的有源半导体电子器件; 以及位于所述绝缘基板的第二区域中的基本上围绕所述第一区域的掺杂半导体。 装置还包括覆盖并邻近掺杂半导体的耗散导体。 装置还包括与有源半导体电子器件进行电连接的金属测试探针触点。 该装置用于消散中心频率在约1千兆赫和约1,000千兆赫之间范围内的串扰辐射。 制造装置的方法。