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公开(公告)号：US07471855B2
公开(公告)日：2008-12-30
申请号：US11180122
申请日：2005-07-13
IPC分类号： G02B6/12
CPC分类号： G02B6/4204 , G02B6/30
摘要： An optical integrated circuit comprises a semiconductor body, a semiconductor optical waveguide located on the body, and a bipolar phototransistor located on and optically coupled to the waveguide. In a preferred embodiment, the base region of the transistor is configured to absorb radiation propagating in the waveguide, but the emitter and collector regions are both configured not to absorb the propagating radiation. In a further preferred embodiment, the waveguide is configured to guide the radiation along a propagation axis therein, and the transistor makes an elongated footprint along the waveguide, the footprint being elongated along the direction of the propagation axis. In another preferred embodiment, the footprint is at least three times longer along the propagation axis than along a direction perpendicular thereto.
摘要翻译： 光学集成电路包括半导体本体，位于本体上的半导体光波导和位于光学耦合到波导的双极光电晶体管。 在优选实施例中，晶体管的基极区被配置为吸收在波导中传播的辐射，但是发射极和集电极区域均被配置为不吸收传播辐射。 在另一优选实施例中，波导被配置为沿其中的传播轴引导辐射，并且晶体管沿着波导形成细长的占地面积，所述覆盖区沿着传播轴线的方向延伸。 在另一个优选实施例中，沿着传播轴线的距离比垂直于其的方向至少长三倍。
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公开(公告)号：US20100054761A1
公开(公告)日：2010-03-04
申请号：US12229983
申请日：2008-08-28
申请人： Young-Kai Chen , Christopher Richard Doerr , Vincent Etienne Houtsma , Ting-Chen Hu , Andreas Bertold Leven , David Thomas Neilson , Nils Guenter Weimann , Liming Zhang
发明人： Young-Kai Chen , Christopher Richard Doerr , Vincent Etienne Houtsma , Ting-Chen Hu , Andreas Bertold Leven , David Thomas Neilson , Nils Guenter Weimann , Liming Zhang
IPC分类号： H04B10/06
CPC分类号： H04B10/611 , H04B10/60 , H04B10/614
摘要： An optical receiver has a monolithically integrated electrical and optical circuit that includes a substrate with a planar surface. Along the planar surface, the monolithically integrated electrical and optical circuit has an optical hybrid, one or more variable optical attenuators, and photodetectors. The optical hybrid is connected to receive light beams, to interfere light of said received light beams with a plurality of relative phases and to output said interfered light via optical outputs thereof. Each of the one or more variable optical attenuators connects between a corresponding one of the optical outputs and a corresponding one of the photodetectors.
摘要翻译： 光学接收器具有包括具有平坦表面的基板的单片集成电路和光学电路。 沿着平坦表面，单片集成电光电路具有光学混合，一个或多个可变光衰减器和光电探测器。 光混合器被连接以接收光束，以用多个相对相位干涉所述接收的光束的光，并通过其光输出来输出所述被干扰的光。 所述一个或多个可变光衰减器中的每一个连接在所述光输出中的相应一个和所述光电检测器中的对应的一个。
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公开(公告)号：US20090146179A1
公开(公告)日：2009-06-11
申请号：US12004597
申请日：2007-12-21
IPC分类号： H01L31/105 , H04B10/04
CPC分类号： H01L27/1446 , H01L31/035281 , Y02E10/50
摘要： An apparatus includes a light detector. The light detector includes a substrate with a planar surface and an array of photodiodes located along the planar surface. Each photodiode has a sequence of different semiconductor layers stacked vertically over the planar surface. The photodiodes are electrically connected in series.
摘要翻译： 一种装置包括光检测器。 光检测器包括具有平面表面的基板和沿平面表面定位的光电二极管阵列。 每个光电二极管具有在平坦表面上垂直堆叠的不同半导体层的序列。 光电二极管串联电连接。
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公开(公告)号：US20090324250A1
公开(公告)日：2009-12-31
申请号：US12317090
申请日：2008-12-19
IPC分类号： H04B10/04
CPC分类号： H04B10/00 , H04B2210/006
摘要： A wireless transmitter includes an optical modulator, an optical power splitter, a plurality of electrical drivers, and a plurality of antennas. The optical power splitter has a plurality of optical outputs and has an optical input connected to receive a modulated optical carrier from the optical modulator. Each driver is configured to detect a portion of the modulated optical carrier output by one of the optical outputs of the optical power splitter. Each antenna is connected to be driven by one of the electrical drivers.
摘要翻译： 无线发射机包括光调制器，光功率分配器，多个电驱动器和多个天线。 光功率分配器具有多个光输出，并具有连接以从光调制器接收调制光载波的光输入。 每个驱动器被配置为检测由光功率分配器的光输出之一输出的调制光载波的一部分。 每个天线被连接以由其中一个电驱动器驱动。
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5.发明授权Dissipative isolation frames for active microelectronic devices, and methods of making such dissipative isolation frames 有权用于有源微电子器件的耗散隔离框架，以及制造这种耗散隔离框架的方法公开(公告)号：US07170147B2
公开(公告)日：2007-01-30
申请号：US10628748
申请日：2003-07-28
IPC分类号： H00L23/552 , G00R21/26 , H00B11/02
CPC分类号： H01L23/544 , H01L23/552 , H01L23/66 , H01L2223/54473 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , Y10S438/953 , H01L2924/00
摘要： Microelectronic apparatus having protection against high frequency crosstalk radiation, comprising: a planar insulating substrate; an active semiconductor electronic device located over a first region of the insulating substrate; and a doped semiconductor located in a second region of the insulating substrate substantially surrounding the first region. Apparatus further comprising a dissipative conductor overlaying and adjacent to the doped semiconductor. Apparatus additionally comprising metallic test probe contacts making electrical connections with the active semiconductor electronic device. Application of the apparatus to dissipate crosstalk radiation having a center frequency within a range between about 1 gigahertz and about 1,000 gigahertz. Methods for making the apparatus.
摘要翻译： 具有防止高频串扰辐射的微电子装置，包括：平面绝缘基板; 位于所述绝缘基板的第一区域上方的有源半导体电子器件; 以及位于所述绝缘基板的第二区域中的基本上围绕所述第一区域的掺杂半导体。 装置还包括覆盖并邻近掺杂半导体的耗散导体。 装置还包括与有源半导体电子器件进行电连接的金属测试探针触点。 该装置用于消散中心频率在约1千兆赫和约1,000千兆赫之间范围内的串扰辐射。 制造装置的方法。
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公开(公告)号：US07190047B2
公开(公告)日：2007-03-13
申请号：US10859894
申请日：2004-06-03
IPC分类号： H01L27/082
CPC分类号： H01L29/66242 , H01L29/66318 , H01L29/7371
摘要： Apparatus comprising: a first compound semiconductor composition layer doped to have a first charge carrier polarity; a second compound semiconductor composition layer doped to have a second charge carrier polarity and located on the first layer; a third compound semiconductor composition layer doped to have the first charge carrier polarity and located on the second layer; a base electrode on the second layer; and a spacer ring interposed between and defining a charge carrier access path distance between the base electrode and the third layer, the path distance being within a range of between about 200 Å and about 1000 Å. Techniques for making apparatus. Apparatus is useful as a heterobipolar transistor, particularly for high frequency applications.
摘要翻译： 装置包括：掺杂以具有第一电荷载流子极性的第一化合物半导体组合物层; 第二化合物半导体组合物层，被掺杂以具有第二电荷载流子极性并位于第一层上; 第三化合物半导体组合物层，被掺杂以具有第一电荷载流子极性并位于第二层上; 第二层上的基极; 以及插入在基极和第三层之间并且限定基极和第三层之间的电荷载体存取路径距离的间隔环，路径距离在约和之间的范围内。 制造设备的技术。 器件可用作异双极晶体管，特别适用于高频应用。
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7.发明申请Conductive isolation frames for active microelectronic devices, and methods of making such conductive isolation frames 有权用于有源微电子器件的导电隔离框架及制造这种导电隔离框架的方法公开(公告)号：US20050023708A1
公开(公告)日：2005-02-03
申请号：US10628748
申请日：2003-07-28
IPC分类号： H01L23/544 , H01L23/552 , H01L23/66
CPC分类号： H01L23/544 , H01L23/552 , H01L23/66 , H01L2223/54473 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , Y10S438/953 , H01L2924/00
摘要： Microelectronic apparatus having protection against high frequency crosstalk radiation, comprising: a planar insulating substrate; an active semiconductor electronic device located over a first region of the insulating substrate; and a doped semiconductor located in a second region of the insulating substrate substantially surrounding the first region. Apparatus further comprising a dissipative conductor overlaying and adjacent to the doped semiconductor. Apparatus additionally comprising metallic test probe contacts making electrical connections with the active semiconductor electronic device. Application of the apparatus to dissipate crosstalk radiation having a center frequency within a range between about 1 gigahertz and about 1,000 gigahertz. Methods for making the apparatus.
摘要翻译： 具有防止高频串扰辐射的微电子装置，包括：平面绝缘基板; 位于所述绝缘基板的第一区域上方的有源半导体电子器件; 以及位于所述绝缘基板的第二区域中的基本上围绕所述第一区域的掺杂半导体。 装置还包括覆盖并邻近掺杂半导体的耗散导体。 装置还包括与有源半导体电子器件进行电连接的金属测试探针触点。 该装置用于消散中心频率在约1千兆赫和约1,000千兆赫之间范围内的串扰辐射。 制造装置的方法。
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公开(公告)号：US08073345B2
公开(公告)日：2011-12-06
申请号：US11644536
申请日：2006-12-22
IPC分类号： H04B10/06
CPC分类号： H04B10/611 , H04B10/61 , H04B10/6161 , H04B10/6164 , H04B10/6165 , H04B10/6166
摘要： A method for determining symbols PSK modulated on an optical carrier includes interfering a first polarization component of the modulated optical carrier and a reference optical carrier in a first optical mixer and interfering the first polarization component of the modulated optical carrier and the reference with a different relative phase in a second optical mixer. The method also includes sampling the interfered carriers from the first optical mixer to produce first digital sampled values and sampling the interfered carriers from the second optical mixer to produce second digital sampled values. The first and second digital sampled values of a sampling period form a first complex sampling value thereof. The method also includes offsetting a phase of a complex signal value corresponding to each first complex sampling value to correct for a phase error caused by a frequency offset between the modulated and reference optical carriers.
摘要翻译： 一种用于确定在光载波上调制的符号PSK的方法包括：在第一光混合器中干扰调制光载波的第一偏振分量和参考光载波，并将调制的光载波的第一偏振分量与参考用不同的相对 在第二光学混合器中。 该方法还包括对来自第一光混合器的受干扰载波进行采样，以产生第一数字采样值，并对来自第二光混合器的干扰载波进行采样以产生第二数字采样值。 采样周期的第一和第二数字采样值形成其第一复数采样值。 该方法还包括抵消对应于每个第一复数采样值的复信号值的相位，以校正由调制参考光载波之间的频率偏移引起的相位误差。
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公开(公告)号：US08055141B2
公开(公告)日：2011-11-08
申请号：US11957725
申请日：2007-12-17
CPC分类号： H04B10/00 , H04B2210/006
摘要： An apparatus and method for reducing electrical signal intermodulation by processing a balanced electrical signal in the optical domain in a manner adapted to reduce noise and second order intermodulation, and converting the processed optical signal back to an electrical domain signal with either a single or balanced (differential) outputs.
摘要翻译： 一种用于通过以适于减少噪声和二阶互调的方式处理光域中的平衡电信号并且将经处理的光信号转换回具有单个或平衡的电域信号的方式来减少电信号互调的装置和方法 差分）输出。
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公开(公告)号：US08070973B2
公开(公告)日：2011-12-06
申请号：US12286224
申请日：2008-09-29
申请人： Young-Kai Chen , Andreas Bertold Leven , Yang Yang
发明人： Young-Kai Chen , Andreas Bertold Leven , Yang Yang
IPC分类号： B44C1/22
CPC分类号： G02B6/122 , G02B6/131 , G02B6/136 , G02B2006/12097
摘要： Apparatus including: a substrate layer having a substantially planar top surface; an optically conductive peak located and elongated on, and spanning a first thickness measured in a direction generally away from, the top surface; the optically conductive peak having first and second lateral walls each including distal and proximal lateral wall portions, the proximal lateral wall portions intersecting the top surface; and first and second sidewall layers located on the distal lateral wall portions, the sidewall layers not intersecting the top surface and spanning a second thickness that is less than the first thickness measured in the same direction.
摘要翻译： 设备包括：具有基本平坦的顶表面的基底层; 位于并延伸并且跨越在大致远离顶表面的方向测量的第一厚度的光导体峰; 所述光导体峰具有第一和第二侧壁，每个侧壁包括远侧和近侧壁部分，所述近侧壁部分与所述顶表面相交; 以及位于所述远侧壁部分上的第一和第二侧壁层，所述侧壁层不与所述顶表面相交并跨越在相同方向上测量的小于所述第一厚度的第二厚度。
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