摘要:
The present invention relates to a display device and a manufacturing method thereof. The display device includes a substrate, a first conductor disposed on the substrate, a first insulating layer disposed on the first conductor, a second insulating layer disposed on the first insulating layer, a semiconductor disposed on the second insulating layer, and a second conductor disposed on the semiconductor. A thickness of the first insulating layer is greater than a thickness of the first conductor, and the first insulating layer includes a first opening exposing the first conductor.
摘要:
A thin film transistor array panel includes a substrate; a plurality of gate lines that are formed on the substrate; a plurality of data lines that intersect the gate lines; a plurality of thin film transistors that are connected to the gate lines and the data lines; a plurality of color filters that are formed on upper parts of the gate lines, the data lines, and the thin film transistors; a common electrode that is formed on the color filters and that includes a transparent conductor; a passivation layer that is formed on an upper part of the common electrode; and a plurality of pixel electrodes that are formed on an upper part of the passivation layer and that are connected to a drain electrode of each of the thin film transistors.
摘要:
A thin film transistor array panel includes a substrate; a plurality of gate lines that are formed on the substrate; a plurality of data lines that intersect the gate lines; a plurality of thin film transistors that are connected to the gate lines and the data lines; a plurality of color filters that are formed on upper parts of the gate lines, the data lines, and the thin film transistors; a common electrode that is formed on the color filters and that includes a transparent conductor; a passivation layer that is formed on an upper part of the common electrode; and a plurality of pixel electrodes that are formed on an upper part of the passivation layer and that are connected to a drain electrode of each of the thin film transistors.
摘要:
A liquid crystal display includes a first substrate, a plurality of gate lines formed on the first substrate, a plurality of data lines intersecting the gate lines, a plurality of thin film transistors connected to the gate lines and the data lines, a plurality of color filters formed on the gate lines, the data lines, and the thin film transistors, a plurality of first electrodes made of a transparent conductor formed on the color filters, and electrically connected to the thin film transistors, a first passivation layer formed on the first electrodes, a second electrode formed on the first passivation layer, and including a plurality of branch electrodes, a second substrate facing the first substrate, and a liquid crystal layer disposed between the first substrate and the second substrate.
摘要:
A manufacturing method of a display device, wherein the manufacturing method for an embodiment includes: forming color filters in a plurality of pixel regions; forming a conductive layer on the color filters; and separating the conductive layer in each of the pixel regions through a photolithography process and forming a pixel electrode; wherein a groove is formed between the adjacent color filters having different colors at boundaries between the pixel regions; and wherein the photolithography process uses a negative photoresist material.
摘要:
A thin film transistor array panel includes a substrate; a plurality of gate lines that are formed on the substrate; a plurality of data lines that intersect the gate lines; a plurality of thin film transistors that are connected to the gate lines and the data lines; a plurality of color filters that are formed on upper parts of the gate lines, the data lines, and the thin film transistors; a common electrode that is formed on the color filters and that includes a transparent conductor; a passivation layer that is formed on an upper part of the common electrode; and a plurality of pixel electrodes that are formed on an upper part of the passivation layer and that are connected to a drain electrode of each of the thin film transistors.
摘要:
A display substrate includes a plurality of color filters formed on a base substrate, a gate line formed in a trench defined by at least one of the color filters and extended along a first direction, an insulation layer formed on the color filters and the gate line, a data line formed on the insulation layer to be extended along a second direction crossing the first direction, and pixel electrodes formed on the base substrate having the data line formed thereon.
摘要:
A thin film transistor array panel includes a substrate; a plurality of gate lines that are formed on the substrate; a plurality of data lines that intersect the gate lines; a plurality of thin film transistors that are connected to the gate lines and the data lines; a plurality of color filters that are formed on upper parts of the gate lines, the data lines, and the thin film transistors; a common electrode that is formed on the color filters and that includes a transparent conductor; a passivation layer that is formed on an upper part of the common electrode; and a plurality of pixel electrodes that are formed on an upper part of the passivation layer and that are connected to a drain electrode of each of the thin film transistors.
摘要:
Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.
摘要:
Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.