-
公开(公告)号:US20150117090A1
公开(公告)日:2015-04-30
申请号:US14328300
申请日:2014-07-10
申请人: Young-bae KIM , Hyun-sang HWANG
发明人: Young-bae KIM , Hyun-sang HWANG
CPC分类号: H01L45/1206 , G11C13/0011 , G11C13/0069 , G11C2013/0071 , G11C2013/0083 , G11C2213/32 , G11C2213/52 , G11C2213/53 , H01L27/249 , H01L45/085 , H01L45/1226 , H01L45/145 , H01L45/146 , H01L45/147
摘要: A three-terminal synapse device may include a drain layer formed on a substrate, a gate layer formed on the drain layer, a source layer vertically stacked on the substrate and facing the drain layer and the gate layer. First and second vertical insulating layers may be formed between the source layer and a stack including the drain layer and the gate layer. The first and second vertical insulating layers have different ion mobilities from each other. The first and second vertical insulating layers may cover side surfaces of the drain layer and the gate layer. The ion mobility of the second vertical insulating layer may be greater than that of the first vertical insulating layer.
摘要翻译: 三端突触装置可以包括形成在衬底上的漏极层,形成在漏极层上的栅极层,垂直堆叠在衬底上并面向漏极层和栅极层的源极层。 第一和第二垂直绝缘层可以形成在源极层和包括漏极层和栅极层的堆叠之间。 第一和第二垂直绝缘层具有彼此不同的离子迁移率。 第一和第二垂直绝缘层可以覆盖漏极层和栅极层的侧表面。 第二垂直绝缘层的离子迁移率可以大于第一垂直绝缘层的离子迁移率。