摘要:
Provided are methods of manufacturing semiconductor devices. The methods may include forming a first insulation layer on a semiconductor substrate, forming a groove by selectively etching the first insulation layer, filling the groove with a copper-based conductive layer, depositing a cobalt-based capping layer on the copper-based conductive layer by electroless plating, and cleansing the first insulation layer and the cobalt-based capping layer using a basic cleansing solution.
摘要:
Provided are methods of manufacturing semiconductor devices. The methods may include forming a first insulation layer on a semiconductor substrate, forming a groove by selectively etching the first insulation layer, filling the groove with a copper-based conductive layer, depositing a cobalt-based capping layer on the copper-based conductive layer by electroless plating, and cleansing the first insulation layer and the cobalt-based capping layer using a basic cleansing solution.