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    Method and apparatus for regulating exhaust pressure in evacuation system of semiconductor process chamber
    1.
    发明授权
    Method and apparatus for regulating exhaust pressure in evacuation system of semiconductor process chamber 有权
    用于调节半导体处理室排气系统排气压力的方法和装置

    公开(公告)号：US06711956B2

    公开(公告)日：2004-03-30

    申请号：US09984903

    申请日：2001-10-31

    申请人： Yu-An Lin ,  Long-Wen Lin ,  Wen-Cheng Lai ,  Chang-Ping Lin

    发明人： Yu-An Lin ,  Long-Wen Lin ,  Wen-Cheng Lai ,  Chang-Ping Lin

    IPC分类号： G01L700

    CPC分类号： H01L21/67253 ,  G05D16/2013 ,  Y10T137/7761

    摘要： In accordance with the present invention, an apparatus and a method for regulating exhaust pressure in an evacuation system of a semiconductor process chamber are provided. The method comprises steps of generating a first pressure in the semiconductor process chamber with the evacuation system, monitoring the first pressure to generate a first signal, determining a set point for the exhaust pressure responsive to the first signal, and regulating the exhaust pressure by a controller till reaching the set point. The key aspect of the present invention is to maintain the equilibrium of the chamber pressure and the exhaust pressure by implementing an exhaust controller to control the gas flow rate introduced into the evacuation system. In other words, when the chamber pressure is increased, the gas is introduced into the evacuation system at an increased flow rate. On the other hand, when the chamber pressure is decreased, the gas is introduced into the evacuation system at a decreased flow rate. The dynamic control over the gas introduced into the evacuation system advantageously increase the speed of response during the changes of chamber pressure, as well as active control of the chamber pressure in place of moving the throttle valve. Thus, by minimizing the movement of throttle valve, the chances of particulate contamination of the process are greatly reduced.

    摘要翻译： 根据本发明，提供一种用于调节半导体处理室的抽空系统中的排气压力的装置和方法。 该方法包括以下步骤：在具有排气系统的半导体处理室中产生第一压力，监测第一压力以产生第一信号，响应于第一信号确定用于排气压力的设定点，并且将排气压力调节为 控制器达到设定点。 本发明的关键方面是通过实施排气控制器来控制引入抽空系统的气体流量来保持腔室压力和排气压力的平衡。 换句话说，当腔室压力增加时，气体以增加的流速被引入抽空系统。 另一方面，当腔室压力降低时，以降低的流量将气体引入抽空系统。 引入抽空系统的气体的动态控制有利地增加了腔室压力变化期间的响应速度，以及主动地控制腔室压力以代替移动节流阀。 因此，通过最小化节流阀的运动，该方法的微粒污染的机会大大降低。