Method for manufacturing a carbon nanotube field emission display
    1.
    发明授权
    Method for manufacturing a carbon nanotube field emission display 失效
    碳纳米管场发射显示器的制造方法

    公开(公告)号:US06692791B2

    公开(公告)日:2004-02-17

    申请号:US09978045

    申请日:2001-10-17

    IPC分类号: B05D512

    摘要: The present invention provides a method for manufacturing a carbon nanotube field emission display. The method comprises the steps of providing a substrate, screen printing a first conducting layer on the substrate, sintering the first conducting layer, screen printing an isolation layer on the first conducting layer and a second conducting layer on the isolation layer, etching the second conducting layer and the isolation layer, whereby a cavity exposing the first conducting layer is formed, sintering the second conducting layer and the isolation layer, and forming a carbon nanotube layer on the first conducting layer in the cavity.

    摘要翻译: 本发明提供一种碳纳米管场发射显示器的制造方法。 该方法包括以下步骤:提供衬底,在衬底上丝网印刷第一导电层,烧结第一导电层,丝网印刷第一导电层上的隔离层和隔离层上的第二导电层,蚀刻第二导电层 从而形成露出第一导电层的空腔,烧结第二导电层和隔离层,并在空腔中的第一导电层上形成碳纳米管层。

    Carbon nano-tube field emission display having strip shaped gate
    2.
    发明申请
    Carbon nano-tube field emission display having strip shaped gate 失效
    具有带状门的碳纳米管场发射显示器

    公开(公告)号:US20050067938A1

    公开(公告)日:2005-03-31

    申请号:US10724741

    申请日:2003-12-02

    摘要: A carbon nano-tube field emission display has a plurality of strip shaped gate, wherein the strip shaped gate of the triode structure is now in place of the conventional hole shaped gate, moreover, pluralities of cathode electrons are induced by the electric force from the side of the gate. Therefore, when the carbon nano-tube electron emission source emits electrons, which is controlled under the strip shaped gate, and the diffusion direction of the electron beam is confined in the same direction. Consequently, controlling the image pixel and using the particular advantage of triode-structure field emission display significantly improve the image uniformity and the luminous efficiency.

    摘要翻译: 碳纳米管场发射显示器具有多个条状栅极,其中三极管结构的带状栅极现在代替常规的孔形栅极,此外,多个阴极电子由来自 一侧的门。 因此,当碳纳米管电子发射源发射控制在带状栅极下方的电子,并且电子束的扩散方向被限制在相同的方向。 因此,控制图像像素并利用三极管结构场发射显示器的特殊优点,显着提高了图像的均匀性和发光效率。

    FED driving method
    4.
    发明授权
    FED driving method 失效
    FED驾驶方式

    公开(公告)号:US06741039B2

    公开(公告)日:2004-05-25

    申请号:US10145723

    申请日:2002-05-16

    IPC分类号: G09G310

    摘要: An improved FED driving method, which uses a voltage control different from the prior FED, to turn an electron beam on/off and increase the resolution. The improved FED driving method is characterized in increasing a positive voltage applied to the FED's anode, grounding the FED's emitter and applying a negative voltage to the FED's gate. When driving the FED, the anode can pull electron beam out of the cathode with high accelerate voltage and the applied negative voltage on the gate can turn the electron beam on/off. As such, this allows a higher resolution because the electron beam is not influenced by the gate's lateral attraction and high lighting efficiency with high anode accelerate voltage.

    摘要翻译: 使用与先前的FED不同的电压控制的改进的FED驱动方法来打开/关闭电子束并提高分辨率。 改进的FED驱动方法的特征在于增加施加到FED阳极的正电压,将FED的发射极接地并向FED的门施加负电压。 当驱动FED时,阳极可以以高加速电压将电子束拉出阴极,并且栅极上施加的负电压可以打开/关闭电子束。 因此,这允许更高的分辨率,因为电子束不受栅极的横向吸引和高阳极加速电压的高照明效率的影响。

    Method for carbon nanotube emitter surface treatment
    5.
    发明授权
    Method for carbon nanotube emitter surface treatment 失效
    碳纳米管发射体表面处理方法

    公开(公告)号:US07662428B2

    公开(公告)日:2010-02-16

    申请号:US10653990

    申请日:2003-09-04

    IPC分类号: B05D5/12

    摘要: A method for increasing the number of carbon nanotubes exposed on the triode structure device of a field emission display uses the technology of casting surface treatment. For advancing the current density and magnitude of CNT emitters, the method of casting surface treatment on the CNT emitters includes the steps of coating an adhesive material on the surface of the device; heating the adhesive material for adhibitting the surface; and lifting the adhesive material off the surface.

    摘要翻译: 用于增加在场致发射显示器的三极管结构器件上暴露的碳纳米管的数量的方法使用铸造表面处理技术。 为了提高CNT发射体的电流密度和幅度,在CNT发射体上进行表面处理的方法包括在器件表面上涂覆粘合剂材料的步骤; 加热用于粘合表面的粘合剂材料; 并将粘合剂材料从表面上提起。

    Carbon nano-tube field emission display having strip shaped gate
    7.
    发明授权
    Carbon nano-tube field emission display having strip shaped gate 失效
    具有带状门的碳纳米管场发射显示器

    公开(公告)号:US07009331B2

    公开(公告)日:2006-03-07

    申请号:US10724741

    申请日:2003-12-02

    IPC分类号: H01J1/02 H01J19/24

    摘要: A carbon nano-tube field emission display has a plurality of strip shaped gates, wherein the strip shaped gate of the triode structure is in place of the conventional hole shaped gate, and morecover, a plurality of cathode electrons are induced by the electric force from the side of the gate. Therefore, when the carbon nano-tube electron emission source emits electrons, which are controlled under the strip shaped gate, the diffusion direction of the electron beam is confined in the same direction. Consequently, controlling the image pixel and using the particular advantage of the triode-structure field emission display significantly improve the image uniformity and the luminous efficiency.

    摘要翻译: 碳纳米管场致发射显示器具有多个条形门,其中三极管结构的带状栅极代替常规的孔形栅极,并且更多的覆盖,多个阴极电子被电力从 门的一边。 因此,当碳纳米管电子发射源发射被控制在带状栅极下方的电子时,电子束的扩散方向被限制在相同的方向。 因此,控制图像像素并且利用三极管结构场发射显示器的特定优点显着地提高了图像均匀性和发光效率。

    Structure of a coplanar gate-cathode of a triode CNT-FED and method of manufacturing same
    9.
    发明申请
    Structure of a coplanar gate-cathode of a triode CNT-FED and method of manufacturing same 失效
    三极管CNT-FED的共面栅极阴极的结构及其制造方法

    公开(公告)号:US20060258252A1

    公开(公告)日:2006-11-16

    申请号:US11490179

    申请日:2006-07-21

    IPC分类号: B05D3/00 H01J9/24

    摘要: The present inventions provide a structure of coplanar gate-cathode of triode CNT-FED and the manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, made by forming on the substrate by Imprint Lithography and the plurality of dielectric opening made by Imprint Lithography too. Besides, the gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.

    摘要翻译: 本发明提供三极管CNT-FED的共面栅极 - 阴极的结构及其制造方法,通过印刷光刻和喷墨。 该结构包括基板,多个阴极层,多个栅极延伸层,塑料电介质层,多个电介质开口和多个栅电极。 多个阴极层和多个栅极延伸层是共面的,其通过印记平版印刷在基板上形成,以及通过印刷光刻制造的多个电介质开口。 此外,通过喷墨或丝网印刷制造的栅电极可以通过塑料电介质层延伸到栅极延伸电极,以具有共面的栅极 - 阴极。

    Triode CNT-FED structure gate runner and cathode manufactured method
    10.
    发明申请
    Triode CNT-FED structure gate runner and cathode manufactured method 失效
    三极管CNT-FED结构闸流道和阴极制造方法

    公开(公告)号:US20050253501A1

    公开(公告)日:2005-11-17

    申请号:US10863279

    申请日:2004-06-09

    摘要: The present inventions provide a structure of coplanar gate-cathode of triode CNT-FED and the manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, made by forming on the substrate by Imprint Lithography and the plurality of dielectric opening made by Imprint Lithography too. Besides, the gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.

    摘要翻译: 本发明提供三极管CNT-FED的共面栅极 - 阴极的结构及其制造方法,通过印刷光刻和喷墨。 该结构包括基板,多个阴极层,多个栅极延伸层,塑料电介质层,多个电介质开口和多个栅电极。 多个阴极层和多个栅极延伸层是共面的,其通过印记平版印刷在基板上形成,以及通过印刷光刻制造的多个电介质开口。 此外,通过喷墨或丝网印刷制造的栅电极可以通过塑料电介质层延伸到栅极延伸电极,以具有共面的栅极 - 阴极。