Compositions and antireflective coatings for photolithography
    1.
    发明授权
    Compositions and antireflective coatings for photolithography 有权
    用于光刻的组合物和抗反射涂层

    公开(公告)号:US09011591B2

    公开(公告)日:2015-04-21

    申请号:US13596191

    申请日:2012-08-28

    IPC分类号: C08G77/22 G03F7/075 G03F7/09

    摘要: Compositions for use in microelectronic applications: Ra comprises one or more multiple bonds, provided that, if Ra comprises more than one multiple bond, these multiple bonds are not in a conjugated configuration; and R1, R2, R3 are independently selected from alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl; and Rb is selected from H or a saturated group comprising alkyl, alkylene, or alkylidene; and R4, R5, R6 are independently alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl; and Rc comprises more than one multiple bond, and these multiple bonds are in a conjugated configuration; and R7, R8, R9 are independently alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl; and R10, R11, R12, R13 are independently alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl.

    摘要翻译: 用于微电子应用的组合物:Ra包括一个或多个多重键,条件是如果Ra包含多于多个键,则这些多重键不是共轭构型; R 1,R 2,R 3独立地选自烷氧基,羟基,卤素,OC(O)R,OC(O)OR,其中R是烷基或取代的烷基; 并且R b选自H或包含烷基,亚烷基或亚烷基的饱和基团; 和R 4,R 5,R 6独立地是烷氧基,羟基,卤素,OC(O)R,OC(O)OR,其中R是烷基或取代的烷基; 并且R c包含多于一个多重键,并且这些多重键是共轭构型; 并且R 7,R 8,R 9分别是烷氧基,羟基,卤素,OC(O)R,OC(O)OR,其中R是烷基或取代的烷基; R 10,R 11,R 12,R 13分别是烷氧基,羟基,卤素,OC(O)R,OC(O)OR,其中R是烷基或取代的烷基。