公开(公告)号：US08023218B2

公开(公告)日：2011-09-20

申请号：US12313796

申请日：2008-11-25

申请人： Yuchen Zhou ,  Kowang Liu ,  Kunliang Zhang ,  Erhard Schreck

发明人： Yuchen Zhou ,  Kowang Liu ,  Kunliang Zhang ,  Erhard Schreck

IPC分类号： G11B5/02

CPC分类号： G11B5/1278 ,  G11B2005/001

摘要： We describe a system for electric field assisted magnetic recording where a recordable magnetic medium includes a magnetic recording layer of high coercivity and vertical magnetic anisotropy that is adjacent to an electrostrictive layer which can be placed in a state of stress by a electric field or which is already pre-stressed and which pre-stress can be turned into strain by an electric field. When the magnetic medium is acted on simultaneously by a magnetic writing field and an electric field, the stress in the electrostrictive layer is transferred to a magnetostrictive layer which is the magnetic recording layer by itself or is coupled to the magnetic recording layer, whereupon the magnetic recording layer is made more isotropic and more easily written upon. Residual stresses in the electrostrictive layer can then be removed by an additional electric field of opposite sign to the stress-producing field.

摘要翻译： 我们描述了一种用于电场辅助磁记录的系统，其中可记录磁介质包括与矫顽力层相邻的具有高矫顽力和垂直磁各向异性的磁记录层，该电致伸缩层可通过电场置于应力状态， 已经预应力，哪些预应力可以通过电场变成应变。 当磁介质由磁场和电场同时作用时，电致伸缩层中的应力自身转移到作为磁记录层的磁致伸缩层，或耦合到磁记录层，由此磁性 记录层变得更加各向同性，更容易写入。 电致伸缩层中的残余应力然后可以通过与应力产生场相反的附加电场来去除。

公开(公告)号：US20100128377A1

公开(公告)日：2010-05-27

申请号：US12313796

申请日：2008-11-25

申请人： Yuchen Zhou ,  Kowang Liu ,  Kunliang Zhang ,  Erhard Schreck

发明人： Yuchen Zhou ,  Kowang Liu ,  Kunliang Zhang ,  Erhard Schreck

IPC分类号： G11B5/02 ,  G11B5/82

CPC分类号： G11B5/1278 ,  G11B2005/001

摘要： We describe a system for electric field assisted magnetic recording where a recordable magnetic medium includes a magnetic recording layer of high coercivity and vertical magnetic anisotropy that is adjacent to an electrostrictive layer which can be placed in a state of stress by a electric field or which is already pre-stressed and which pre-stress can be turned into strain by an electric field. When the magnetic medium is acted on simultaneously by a magnetic writing field and an electric field, the stress in the elctrostrictive layer is transferred to a magnetostrictive layer which is the magnetic recording layer by itself or is coupled to the magnetic recording layer, whereupon the magnetic recording layer is made more isotropic and more easily written upon. Residual stresses in the electrostrictive layer can then be removed by an additional electric field of opposite sign to the stress-producing field.

摘要翻译： 我们描述了一种用于电场辅助磁记录的系统，其中可记录磁介质包括与矫顽力层相邻的具有高矫顽力和垂直磁各向异性的磁记录层，该电致伸缩层可通过电场置于应力状态， 已经预应力，哪些预应力可以通过电场变成应变。 当磁介质通过磁场和电场同时作用时，电致伸缩层中的应力自身转移到作为磁记录层的磁致伸缩层，或耦合到磁记录层，由此磁性 记录层变得更加各向同性，更容易写入。 电致伸缩层中的残余应力然后可以通过与应力产生场相反的附加电场来去除。

公开(公告)号：US20090052092A1

公开(公告)日：2009-02-26

申请号：US11894494

申请日：2007-08-21

申请人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

发明人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

IPC分类号： G11B5/33

CPC分类号： G11B5/3113 ,  G11B5/1278 ,  G11B5/147 ,  G11B5/3146 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing through an AFM-FM phase change material that is in an AFM state during non-writing and switches to a FM state by heating during writing. The main pole layer including the write pole may be comprised of a laminated structure having a plurality of “n” ferromagnetic layers and “n-1” AFM-FM phase change material layers arranged in an alternating manner. The AFM-FM phase change material is preferably a FeRh or FeRhX alloy (X=Pt, Pd, or Ir) having a Rh content >35 atomic %. AFM-FM phase change material may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip. Heating for the AFM to FM transition is provided by write coils and/or a coil located near the AFM-FM phase change material to enable faster transition times.

摘要翻译： 公开了一种PMR写入器，其在非写入期间最小化磁极擦除，并且通过在非写入期间处于AFM状态的AFM-FM相变材料的写入期间写入字段最大化并且在写入期间通过加热切换到FM状态。 包括写极的主极层可以由具有多个“n”个铁磁层和“n-1”个AFM-FM相变材料层的交替排列的层压结构构成。 AFM-FM相变材料优选为Rh含量> 35原子％的FeRh或FeRhX合金（X = Pt，Pd或Ir）。 AFM-FM相变材料也可以用作磁通门，以防止磁轭磁通泄漏到写极尖端。 AFM到FM转换的加热由位于AFM-FM相变材料附近的写入线圈和/或线圈提供，以实现更快的转换时间。

公开(公告)号：US08881376B2

公开(公告)日：2014-11-11

申请号：US13199179

申请日：2011-08-22

申请人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

发明人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

IPC分类号： G11B5/127 ,  G11B5/21 ,  G11B5/31 ,  G11B5/147

CPC分类号： G11B5/3113 ,  G11B5/1278 ,  G11B5/147 ,  G11B5/3146 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A method of manufacturing a PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing by including an AFM-FM phase change material spacer that is in an AFM state during non-writing and switches to a FM state by heating during writing. The main pole layer including the write pole may be formed as a laminated structure by a sputter deposition process wherein a plurality of “n” ferromagnetic layers and “n−1” AFM-FM phase change material layers are laid down in an alternating manner. The AFM-FM phase change material is preferably a FeRh or FeRhX alloy (X=Pt, Pd, or Ir) having a Rh content >35 atomic %, and may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip.

摘要翻译： 公开了一种制造PMR写入器的方法，其在非写入期间使磁极擦除最小化，并且在写入期间使写入场最大化，包括在非写入期间处于AFM状态的AFM-FM相变材料间隔物，并且通过 书写过程中加热。 包括写极的主极层可以通过溅射沉积工艺形成为层叠结构，其中以交替的方式放置多个“n”个铁磁层和“n-1”个AFM-FM相变材料层。 AFM-FM相变材料优选为Rh含量> 35原子％的FeRh或FeRhX合金（X = Pt，Pd或Ir），并且还可以用作磁通门以防止磁轭焊剂泄漏到 写极点。

公开(公告)号：US20120087042A1

公开(公告)日：2012-04-12

申请号：US13199188

申请日：2011-08-22

申请人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

发明人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

IPC分类号： G11B5/147 ,  G11B5/60

CPC分类号： G11B5/3113 ,  G11B5/1278 ,  G11B5/147 ,  G11B5/3146 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing through an AFM-FM phase change material that is in an antiferromagnetic (AFM) state during non-writing and switches to a ferromagnetic (FM) state by heating during writing. The main pole layer including the write pole may be comprised of a laminated structure having a plurality of “n” ferromagnetic layers and “n−1” AFM-FM phase change material layers arranged in an alternating manner. The AFM-FM phase change material is preferably a FeRh, FeRhPt, FeRhPd, or FeRhIr and may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip. Heating for the AFM to FM transition is provided by write coils and/or a coil located near the AFM-FM phase change material to enable faster transition times.

摘要翻译： 公开了一种PMR写入器，其在非写入期间最小化磁极擦除，并且在写入期间通过在非写入期间处于反铁磁（AFM）状态的AFM-FM相变材料中写入期间最大化写入场并且通过以下方式切换到铁磁（FM）状态： 书写过程中加热。 包括写极的主极层可以由具有多个“n”个铁磁层和“n-1”个AFM-FM相变材料层的交替排列的层压结构构成。 AFM-FM相变材料优选为FeRh，FeRhPt，FeRhPd或FeRhIr，并且还可以用作磁通门以防止磁轭焊剂泄漏到写极尖端。 AFM到FM转换的加热由位于AFM-FM相变材料附近的写入线圈和/或线圈提供，以实现更快的转换时间。

公开(公告)号：US08446692B2

公开(公告)日：2013-05-21

申请号：US13199188

申请日：2011-08-22

申请人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

发明人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

IPC分类号： G11B5/127 ,  G11B5/147

CPC分类号： G11B5/3113 ,  G11B5/1278 ,  G11B5/147 ,  G11B5/3146 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing through an AFM-FM phase change material that is in an anti-ferromagnetic (AFM) state during non-writing and switches to a ferromagnetic (FM) state by heating during writing. The main pole layer including the write pole may be comprised of a laminated structure having a plurality of “n” ferromagnetic layers and “n−1” AFM-FM phase change material layers arranged in an alternating manner. The AFM-FM phase change material is preferably a FeRh, FeRhPt, FeRhPd, or FeRhIr and may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip. Heating for the AFM to FM transition is provided by write coils and/or a coil located near the AFM-FM phase change material to enable faster transition times.

摘要翻译： 公开了一种PMR写入器，其在非写入期间最小化磁极擦除并且在写入期间通过在非写入期间处于反铁磁（AFM）状态的AFM-FM相变材料中的写入磁场最大化并切换到铁磁（FM） 在写作期间加热状态。 包括写极的主极层可以由具有多个“n”个铁磁层和“n-1”个AFM-FM相变材料层的交替排列的层压结构构成。 AFM-FM相变材料优选为FeRh，FeRhPt，FeRhPd或FeRhIr，并且还可以用作磁通门以防止磁轭焊剂泄漏到写极尖端。 AFM到FM转换的加热由位于AFM-FM相变材料附近的写入线圈和/或线圈提供，以实现更快的转换时间。

公开(公告)号：US20110308074A1

公开(公告)日：2011-12-22

申请号：US13199179

申请日：2011-08-22

申请人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

发明人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

IPC分类号： G11B5/127

CPC分类号： G11B5/3113 ,  G11B5/1278 ,  G11B5/147 ,  G11B5/3146 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing through an AFM-FM phase change material that is in an AFM state during non-writing and switches to a FM state by heating during writing. The main pole layer including the write pole may be comprised of a laminated structure having a plurality of “n” ferromagnetic layers and “n−1” AFM-FM phase change material layers arranged in an alternating manner. The AFM-FM phase change material is preferably a FeRh or FeRhX alloy (X=Pt, Pd, or Ir) having a Rh content>35 atomic %. AFM-FM phase change material may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip. Heating for the AFM to FM transition is provided by write coils and/or a coil located near the AFM-FM phase change material to enable faster transition times.

摘要翻译： 公开了一种PMR写入器，其在非写入期间最小化磁极擦除，并且通过在非写入期间处于AFM状态的AFM-FM相变材料的写入期间写入字段最大化并且在写入期间通过加热切换到FM状态。 包括写极的主极层可以由具有多个“n”个铁磁层和“n-1”个AFM-FM相变材料层的交替排列的层压结构构成。 AFM-FM相变材料优选为Rh含量> 35原子％的FeRh或FeRhX合金（X = Pt，Pd或Ir）。 AFM-FM相变材料也可以用作磁通门，以防止磁轭磁通泄漏到写极尖端。 AFM到FM转换的加热由位于AFM-FM相变材料附近的写入线圈和/或线圈提供，以实现更快的转换时间。

公开(公告)号：US08004794B2

公开(公告)日：2011-08-23

申请号：US11894494

申请日：2007-08-21

申请人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

发明人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

IPC分类号： G11B5/127 ,  G11B5/147

CPC分类号： G11B5/3113 ,  G11B5/1278 ,  G11B5/147 ,  G11B5/3146 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing through an AFM-FM phase change material that is in an AFM state during non-writing and switches to a FM state by heating during writing. The main pole layer including the write pole may be comprised of a laminated structure having a plurality of “n” ferromagnetic layers and “n−1” AFM-FM phase change material layers arranged in an alternating manner. The AFM-FM phase change material is preferably a FeRh or FeRhX alloy (X=Pt, Pd, or Ir) having a Rh content >35 atomic %. AFM-FM phase change material may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip. Heating for the AFM to FM transition is provided by write coils and/or a coil located near the AFM-FM phase change material to enable faster transition times.

摘要翻译： 公开了一种PMR写入器，其在非写入期间最小化磁极擦除，并且通过在非写入期间处于AFM状态的AFM-FM相变材料的写入期间写入字段最大化并且在写入期间通过加热切换到FM状态。 包括写极的主极层可以由具有多个“n”个铁磁层和“n-1”个AFM-FM相变材料层的交替排列的层压结构构成。 AFM-FM相变材料优选为Rh含量> 35原子％的FeRh或FeRhX合金（X = Pt，Pd或Ir）。 AFM-FM相变材料也可以用作磁通门，以防止磁轭磁通泄漏到写极尖端。 AFM到FM转换的加热由位于AFM-FM相变材料附近的写入线圈和/或线圈提供，以实现更快的转换时间。

公开(公告)号：US08228643B2

公开(公告)日：2012-07-24

申请号：US12585854

申请日：2009-09-25

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Shuichi Murakami ,  Michiko Hara ,  Kunliang Zhang ,  Min Li ,  Erhard Schreck

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Shuichi Murakami ,  Michiko Hara ,  Kunliang Zhang ,  Min Li ,  Erhard Schreck

IPC分类号： G11B5/39

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12

摘要： A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of nitrogen ions, nitrogen atoms, nitrogen plasma, and nitrogen radicals on the film submitted to the first treatment.

摘要翻译： 提供一种制造磁阻效应元件的方法。 磁阻效应元件包括包括铁磁材料的第一磁性层，包括铁磁材料的第二磁性层和设置在第一磁性层和第二磁性层之间的间隔层，间隔层具有绝缘层和导电 部分穿透绝缘层。 该方法包括：将膜形成为间隔层的基材; 使用包含氧分子，氧原子，氧离子，氧等离子体和氧自由基中的至少一种的气体进行第一处理; 以及使用包含氮离子，氮原子，氮等离子体和氮自由基中的至少一种的气体进行第一次处理的膜的第二处理。

公开(公告)号：US20100091412A1

公开(公告)日：2010-04-15

申请号：US12585852

申请日：2009-09-25

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Shuichi Murakami ,  Michiko Hara ,  Kunliang Zhang ,  Min Li ,  Erhard Schreck

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Shuichi Murakami ,  Michiko Hara ,  Kunliang Zhang ,  Min Li ,  Erhard Schreck

IPC分类号： G11B5/33 ,  B05D5/12 ,  C23C16/513 ,  H05H1/24

CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  C23C8/36 ,  C23C14/081 ,  C23C14/5833 ,  C23C14/5873 ,  G11B5/3163 ,  G11B2005/3996

摘要： A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of helium ions, helium plasma, helium radicals, neon ions, neon plasma and neon radicals on the film submitted to the first treatment.

摘要翻译： 提供一种制造磁阻效应元件的方法。 磁阻效应元件包括包括铁磁材料的第一磁性层，包括铁磁材料的第二磁性层和设置在第一磁性层和第二磁性层之间的间隔层，间隔层具有绝缘层和导电 部分穿透绝缘层。 该方法包括：将膜形成为间隔层的基材; 使用包含氧分子，氧原子，氧离子，氧等离子体和氧自由基中的至少一种的气体进行第一处理; 以及使用包含氦离子，氦等离子体，氦原子，氖离子，氖等离子体和氖自由基中的至少一种的气体进行第一处理的第二处理。