公开(公告)号：US06987650B2

公开(公告)日：2006-01-17

申请号：US10443358

申请日：2003-05-22

申请人： Yue Liu ,  Kochan Ju ,  Jei-Wei Chang ,  Julie Chen

发明人： Yue Liu ,  Kochan Ju ,  Jei-Wei Chang ,  Julie Chen

IPC分类号： G11B5/39 ,  F25B21/02 ,  F25D23/12 ,  H01L35/28

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996 ,  H01L35/20

摘要： Increasing the output signal from CPP GMR devices by increasing the read current has not previously been considered an option because it would make the device run too hot. This problem has been overcome by using, for the upper and lower leads, materials that differ significantly in their thermoelectric powers. Thus, when DC is passed through the device, from − to + TEP leads, hot and cold junctions are formed and heat is transferred from the micro-device into the leads, resulting in a net local cooling of the device which enables it to operate at higher power. For a GMR device, this translates to a larger output voltage, making it easier, more sensitive, and more reliable to use.

摘要翻译： 增加读取电流从CPP GMR器件增加输出信号以前从未被认为是一个选项，因为它会使器件运行得太热。 对于上，下引线，通过使用热电功率显着不同的材料来克服这个问题。 因此，当DC通过器件时，从 - 至+ TEP引线形成热连接点和热接头，并且热量从微器件传输到引线中，导致器件的局部局部冷却，使其能够操作 在更高的权力。 对于GMR器件，这转化为更大的输出电压，使其更容易，更灵敏，更可靠使用。

公开(公告)号：US20070041124A1

公开(公告)日：2007-02-22

申请号：US11588564

申请日：2006-10-27

申请人： Jei-Wei Chang ,  Koichi Terunuma ,  Youfeng Zheng ,  Kochan Ju

发明人： Jei-Wei Chang ,  Koichi Terunuma ,  Youfeng Zheng ,  Kochan Ju

IPC分类号： G11B5/09

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.

摘要翻译： 通过限制偏置消除层的宽度并添加额外的绝缘层来解决与CPP头中的偏置磁体之间的间隔减小相关联的增加的边缘灵敏度的问题，以确保通过器件的电流仅流过 其中心区域，从而最小化其边缘读取灵敏度。

公开(公告)号：US07118680B2

公开(公告)日：2006-10-10

申请号：US10718372

申请日：2003-11-20

申请人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

发明人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

IPC分类号： G11B5/39

CPC分类号： G11B5/1278 ,  Y10T29/49052

摘要： A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.

摘要翻译： 提供了一种用于制造合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器的方法，该方法包括采用初级和次级电子吸收的电子束光刻工艺，第一和第二 用于对封装的铁磁自由层和导电的非磁性间隔层进行图案化的自对准剥离工艺。 所制造的传感器具有降低的电阻和增加的灵敏度。

公开(公告)号：US07111386B2

公开(公告)日：2006-09-26

申请号：US11266418

申请日：2005-11-03

申请人： Chao-Peng Chen ,  Kevin Lin ,  Jei-Wei Chang ,  Kochan Ju ,  Hui-Chuan Wang

发明人： Chao-Peng Chen ,  Kevin Lin ,  Jei-Wei Chang ,  Kochan Ju ,  Hui-Chuan Wang

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49128

摘要： A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.

公开(公告)号：US07012789B2

公开(公告)日：2006-03-14

申请号：US10131675

申请日：2002-04-24

申请人： Kochan Ju ,  Cherng-Chyi Han ,  Po-Kang Wang ,  Mao-Min Chen ,  Chun Liu ,  Jei Wei Chang

发明人： Kochan Ju ,  Cherng-Chyi Han ,  Po-Kang Wang ,  Mao-Min Chen ,  Chun Liu ,  Jei Wei Chang

IPC分类号： G11B5/127

CPC分类号： G11B5/3912 ,  G11B5/3967 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A merged read/write magnetic recording head comprises a low magnetic moment first magnetic shield layer over a substrate. A read gap layer with a magnetoresistive head is formed over the first shield layer. A shared pole comprises a low magnetic moment second magnetic shield layer plated on a sputtered seed PLM layer over the read gap layer, a non-magnetic layer plated over the PLM layer and a HMM lower pole layer plated over the second magnetic shield layer. A write gap layer is formed over the first high magnetic moment pole layer of the shared pole. An upper pole comprises a high magnetic moment pole layer over the write gap layer.

摘要翻译： 合并的读/写磁记录头包括在衬底上的低磁矩第一磁屏蔽层。 在第一屏蔽层上形成具有磁阻头的读取间隙层。 共享极包括电镀在读取间隙层上的溅射种子PLM层上的低磁矩第二磁屏蔽层，镀在PLM层上的非磁性层和镀在第二磁屏蔽层上的HMM下极层。 在共享极的第一高磁矩极点上形成写间隙层。 上极包括写间隙层上的高磁矩极点层。

公开(公告)号：US20060048375A1

公开(公告)日：2006-03-09

申请号：US11266418

申请日：2005-11-03

申请人： Chao-Peng Chen ,  Kevin Lin ,  Jei-Wei Chang ,  Kochan Ju ,  Hui-Chuan Wang

发明人： Chao-Peng Chen ,  Kevin Lin ,  Jei-Wei Chang ,  Kochan Ju ,  Hui-Chuan Wang

IPC分类号： G11B5/127 ,  H04R31/00 ,  C25D5/02

CPC分类号： B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49128

摘要： A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.

公开(公告)号：US20050094323A1

公开(公告)日：2005-05-05

申请号：US11011994

申请日：2004-12-14

申请人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

发明人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

IPC分类号： G01R33/09 ,  B05D7/00 ,  G11B5/127 ,  G11B5/187 ,  G11B5/29 ,  G11B5/31 ,  G11B5/33 ,  G11B5/39 ,  H01F10/16 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  H01L43/12 ,  H04R31/00

CPC分类号： G11B5/33 ,  G11B5/29 ,  G11B5/31 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.

摘要翻译： 目前，自旋阀头的屏蔽到屏蔽分离不能低于约800，这主要是由于传感器到引线短路问题。 现在已经通过在自旋阀传感器的顶部或底部（或两个）侧上插入高磁导率，高电阻率的薄膜屏蔽来克服这个问题。 需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍 层。 描述本发明的五个实施例。

公开(公告)号：US06447689B1

公开(公告)日：2002-09-10

申请号：US09584424

申请日：2000-06-05

申请人： Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Kochan Ju ,  Jei-Wei Chang

发明人： Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Kochan Ju ,  Jei-Wei Chang

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  H01F41/308

摘要： An improved process for manufacturing a spin valve structure that has buried leads is disclosed. A key feature is the inclusion in the process of a temporary protective layer over the seed layer on which the spin valve structure will be grown. This protective layer is in place at the time that photoresist (used to define the location of the spin valve relative to the buried leads and longitudinal bias layers) is removed. The protective layer is later removed as a natural byproduct of surface cleanup just prior to the formation of the spin valve itself.

摘要翻译： 公开了一种制造具有埋地引线的自旋阀结构的改进方法。 一个关键特征是在自旋阀结构将在其上生长的种子层上包含临时保护层的过程。 该保护层在光刻胶（用于限定自旋阀相对于埋入引线和纵向偏置层的位置）被去除时就位。 在形成自旋阀本身之前，保护层随后被除去，作为表面清洁的天然副产物。

公开(公告)号：US06428714B1

公开(公告)日：2002-08-06

申请号：US09584426

申请日：2000-06-05

申请人： Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Kochan Ju ,  Jei-Wei Chang

发明人： Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Kochan Ju ,  Jei-Wei Chang

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  H01F41/308

摘要： An improved process for manufacturing a spin valve structure that has buried leads is disclosed. A key feature is the inclusion in the process of a temporary protective layer over the seed layer on which the spin valve structure will be grown. This protective layer remains in place while the buried leads as well as longitudinal bias means are formed. Processing includes use of photoresist liftoff. The protective layer is removed as a natural byproduct of surface cleanup just prior the formation of the spin valve.

摘要翻译： 公开了一种制造具有埋地引线的自旋阀结构的改进方法。 一个关键特征是在自旋阀结构将在其上生长的种子层上包含临时保护层的过程。 该保护层保持原位，同时形成埋入引线以及纵向偏置装置。 处理包括使用光致抗蚀剂剥离。 在形成自旋阀之前，保护层作为表面清洁的天然副产物被去除。

公开(公告)号：US06287476B1

公开(公告)日：2001-09-11

申请号：US09332429

申请日：1999-06-14

申请人： Kochan Ju ,  Shou-Chen Kao ,  Cherng-Chyi Han ,  Jei-Wei Chang ,  Mao-Min Chen

发明人： Kochan Ju ,  Shou-Chen Kao ,  Cherng-Chyi Han ,  Jei-Wei Chang ,  Mao-Min Chen

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/09 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/40 ,  G11B2005/3996

摘要： A method to form a passivation layer using an electrochemical process over a MR Sensor so that the passivation layer defines the MR track width. The passivation layer is formed by anodizing the MR sensor. The passivation layer is an electrical insulator (preventing Sensor current (I) from shunting through the overspray) and a heat conductor to allow MR heat to dissipate away from the MR sensor through the overspray. The method comprises: forming a passivation layer on the MR sensor; the passivation layer formed using an electrochemical process. Then we spinning-on and printing a lift-off photoresist structure over the passivation layer. The passivation layer is etched to remove the passivation layer not covered by the lift-off structure thereby defining a track width of the MR sensor. Then we deposit a lead layer over the passivation layer and MR sensor. The lift-off structure is removed where by the passivation layer defines a track width. The passivation layer is an electrical insulator that prevents sensor current (I) form shunting through overspray layers while allowing heat to dissipate through to the lead layer.

摘要翻译： 使用MR传感器上的电化学过程形成钝化层的方法，使得钝化层限定MR磁道宽度。 通过阳极氧化MR传感器形成钝化层。 钝化层是电绝缘体（防止传感器电流（I）通过过喷）分流）和热导体，以允许MR热量通过过喷器散射离开MR传感器。 该方法包括：在MR传感器上形成钝化层; 使用电化学工艺形成钝化层。 然后我们旋转并在钝化层上印刷剥离光致抗蚀剂结构。 蚀刻钝化层以除去未被剥离结构覆盖的钝化层，从而限定MR传感器的轨道宽度。 然后我们在钝化层和MR传感器上沉积铅层。 去除剥离结构，其中钝化层限定轨道宽度。 钝化层是电绝缘体，其防止传感器电流（I）通过过喷层形成分流，同时允许热量散发到引线层。