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公开(公告)号：US06984841B2
公开(公告)日：2006-01-10
申请号：US10468061
申请日：2002-01-30
IPC分类号： H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L33/20 , B82Y20/00 , H01L24/05 , H01L33/007 , H01L33/08 , H01L2224/48463 , H01S5/0021 , H01S5/0207 , H01S5/3202 , H01S5/34333 , H01S5/405
摘要： The nitride semiconductor light emitting device includes a nitride semiconductor underlayer (102) grown on a surface of a nitride semiconductor substrate or a surface of a nitride semiconductor substrate layer laminated over a base substrate of other than a nitride semiconductor, and a light emitting device structure having a light emitting layer (106) including a quantum well layer or a quantum well layer and a barrier layer in contact with the quantum well layer between an n type layer (103–105) and a p type layer (107–110) over the nitride semiconductor underlayer. It includes a depression (D) not flattened on a surface of the light emitting device structure even after growth of the light emitting device structure.
摘要翻译： 氮化物半导体发光器件包括在氮化物半导体衬底的表面上生长的氮化物半导体衬底（102）或层叠在氮化物半导体之外的基底衬底上的氮化物半导体衬底层的表面，以及发光器件结构 具有包括量子阱层或量子阱层的发光层（106）和与n型层（103-105）和ap型层（107-110）之间的量子阱层接触的阻挡层 氮化物半导体底层。 它包括即使在发光器件结构生长之后，在发光器件结构的表面上也不会变平的凹陷（D）。
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公开(公告)号：US07700001B2
公开(公告)日：2010-04-20
申请号：US12073794
申请日：2008-03-10
申请人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
发明人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
摘要翻译： 由发出一次光的光源和吸收初级光并发出二次光的荧光体构成的发光装置，能够提供高亮度，低功耗，长寿命，同时最小化对环境的不利影响。 荧光体由体积为2 800nm 3以下的微细晶体形式的III-V族半导体形成。 从微粒子晶体发出的光取决于其体积，因此赋予细粒子晶体预定的体积分布，可以调节二次光的波长范围。
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公开(公告)号：US20080217579A1
公开(公告)日：2008-09-11
申请号：US12073794
申请日：2008-03-10
申请人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
发明人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
IPC分类号： C09K11/62
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
摘要翻译： 由发出一次光的光源和吸收初级光并发出二次光的荧光体构成的发光装置，能够提供高亮度，低功耗，长寿命，同时最小化对环境的不利影响。 荧光体由体积为2×800nm±3以下的细颗粒晶体形式的III-V族半导体形成。 从微粒子晶体发出的光取决于其体积，因此赋予细粒子晶体预定的体积分布，可以调节二次光的波长范围。
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4.发明授权公开(公告)号：US08287760B2
公开(公告)日：2012-10-16
申请号：US12710105
申请日：2010-02-22
申请人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
发明人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
IPC分类号： F21K2/00
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
摘要翻译： 由发出一次光的光源和吸收初级光并发出二次光的荧光体构成的发光装置，能够提供高亮度，低功耗，长寿命，同时最小化对环境的不利影响。 荧光体由体积为2 800nm 3以下的微细晶体形式的III-V族半导体形成。 从微粒子晶体发出的光取决于其体积，因此赋予细粒子晶体预定的体积分布，可以调节二次光的波长范围。
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公开(公告)号：US20060187994A1
公开(公告)日：2006-08-24
申请号：US11402926
申请日：2006-04-13
申请人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
发明人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
IPC分类号： H01S3/09
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
摘要翻译： 由发出一次光的光源和吸收初级光并发出二次光的荧光体构成的发光装置，能够提供高亮度，低功耗，长寿命，同时最小化对环境的不利影响。 荧光体由体积为2×800nm±3以下的细颗粒晶体形式的III-V族半导体形成。 从微粒子晶体发出的光取决于其体积，因此赋予细粒子晶体预定的体积分布，可以调节二次光的波长范围。
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6.发明申请公开(公告)号：US20100148120A1
公开(公告)日：2010-06-17
申请号：US12710105
申请日：2010-02-22
申请人： Masaya ISHIDA , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takamoto Sasaki , Yusuke Mori
发明人： Masaya ISHIDA , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takamoto Sasaki , Yusuke Mori
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
摘要翻译： 由发出一次光的光源和吸收初级光并发出二次光的荧光体构成的发光装置，能够提供高亮度，低功耗，长寿命，同时最小化对环境的不利影响。 荧光体由体积为2 800nm 3以下的微细晶体形式的III-V族半导体形成。 从微粒子晶体发出的光取决于其体积，因此赋予细粒子晶体预定的体积分布，可以调节二次光的波长范围。
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公开(公告)号：US07058103B2
公开(公告)日：2006-06-06
申请号：US10647107
申请日：2003-08-25
申请人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
发明人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
IPC分类号： H01S3/08
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III–V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
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公开(公告)号：US07573924B2
公开(公告)日：2009-08-11
申请号：US11127083
申请日：2005-05-12
申请人： Yuhzoh Tsuda , Daisuke Hanaoka , Masaya Ishida
发明人： Yuhzoh Tsuda , Daisuke Hanaoka , Masaya Ishida
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/02476 , H01S5/0683 , H01S5/32341
摘要： A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light detecting element mounted on the stem for detecting a laser beam from the nitride semiconductor laser element. The nitride semiconductor laser element, the heat sink and the light detecting element are enclosed within a cap that is joined to the stem, and an atmosphere within the cap has a dew point of at most −30° C. and an oxygen concentration of at most 100 ppm.
摘要翻译： 氮化物半导体激光器件包括具有谐振器端面并能够发射波长最多为420nm的光的氮化物半导体激光元件，连接到氮化物半导体激光元件的散热片，安装有散热片的杆， 以及安装在所述杆上的光检测元件，用于检测来自所述氮化物半导体激光元件的激光束。 氮化物半导体激光元件，散热器和光检测元件被封闭在与杆接合的盖内，盖内的气氛的露点至多为-30℃，氧浓度为 最多100 ppm。
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公开(公告)号：US20050265413A1
公开(公告)日：2005-12-01
申请号：US11127083
申请日：2005-05-12
申请人： Yuhzoh Tsuda , Daisuke Hanaoka , Masaya Ishida
发明人： Yuhzoh Tsuda , Daisuke Hanaoka , Masaya Ishida
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/02476 , H01S5/0683 , H01S5/32341
摘要： A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light detecting element mounted on the stem for detecting a laser beam from the nitride semiconductor laser element. The nitride semiconductor laser element, the heat sink and the light detecting element are enclosed within a cap that is joined to the stem, and an atmosphere within the cap has a dew point of at most −30° C. and an oxygen concentration of at most 100 ppm.
摘要翻译： 氮化物半导体激光器件包括具有谐振器端面并能够发射波长最多为420nm的光的氮化物半导体激光元件，连接到氮化物半导体激光元件的散热片，安装有散热片的杆， 以及安装在所述杆上的光检测元件，用于检测来自所述氮化物半导体激光元件的激光束。 氮化物半导体激光元件，散热器和光检测元件被封闭在与杆接合的盖内，盖内的气氛的露点至多为-30℃，氧浓度为 最多100 ppm。
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公开(公告)号：US20050157769A1
公开(公告)日：2005-07-21
申请号：US11038123
申请日：2005-01-21
申请人： Shigetoshi Ito , Daisuke Hanaoka
发明人： Shigetoshi Ito , Daisuke Hanaoka
CPC分类号： H01S5/32341 , H01L2224/48091 , H01L2224/48247 , H01S5/0021 , H01S5/02212 , H01S5/02484 , H01S5/2231 , H01L2924/00014
摘要： Provided is a semiconductor laser device that is free from or suffers less from deterioration resulting from a surge or that is less likely to suffer from deterioration resulting from a surge. The semiconductor laser device has a conductive stem 101, a submount 102 fixed to the stem 101, a nitride semiconductor laser chip 103 mounted on the submount 102, pins 104 and 105 fixed to the stem 101 but insulated therefrom, a wire connecting the pin 104 to a p-electrode of the nitride semiconductor laser chip 103, a wire connecting the pin 105 to an n-electrode of the nitride semiconductor laser chip 103, and a cap 106 enclosing the nitride semiconductor laser chip 103 and the submount 102 and fixed to the stem 101.
摘要翻译： 提供一种半导体激光器件，其免于或遭受由于浪涌导致的劣化或不太可能遭受由于浪涌引起的劣化的半导体激光器件。 半导体激光器件具有导电杆101，固定到杆101的底座102，安装在基座102上的氮化物半导体激光器芯片103，固定到杆101但与之绝缘的销104和105，连接销104 涉及氮化物半导体激光器芯片103的p电极，将引脚105连接到氮化物半导体激光器芯片103的n电极的引线以及封装氮化物半导体激光器芯片103和基座102的盖106，并固定到 杆101。
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