-
公开(公告)号：US09777379B2
公开(公告)日：2017-10-03
申请号：US14129698
申请日：2012-06-04
CPC分类号： C23C18/163 , C23C18/1619 , C23C18/1632 , C23C18/1655 , C23C18/1669 , C23C18/1675 , C23C18/1676 , C23C18/168 , C23C18/18 , C23C18/50 , H05K3/187 , H05K2203/0165 , H05K2203/072 , H05K2203/075
摘要： A plating apparatus can perform a plating process on an entire surface of a substrate uniformly. A plating apparatus 20 includes a substrate holding/rotating device 110 configured to hold and rotate a substrate 2; a discharging device 21 configured to discharge a plating liquid toward the substrate 2 held on the substrate holding/rotating device 110; and a controller 160 configured to control the substrate holding/rotating device 110 and the discharging device 21. Further, the discharging device 21 includes a first nozzle 40 having a multiple number of discharge openings 41 arranged in a radial direction of the substrate 2 or having a discharge opening 42 extended in the radial direction of the substrate 2; and a second nozzle 45 having a discharge opening 46 configured to be positioned closer to a central portion of the substrate 2 than the discharge opening of the first nozzle 40.
-
公开(公告)号：US20140120264A1
公开(公告)日：2014-05-01
申请号：US14128109
申请日：2012-06-07
IPC分类号： B05C11/10
CPC分类号： B05C11/1039 , C23C18/1619 , C23C18/1632 , C23C18/165 , C23C18/168 , C23C18/1682 , C23C18/1683 , C23C18/32
摘要： A plating apparatus 20 has a substrate holding/rotating device 110 configured to hold and rotate a substrate 2 and a plating liquid supplying device 30 configured to supply a plating liquid 35 onto the substrate 2. The plating liquid supplying device 30 has a supply tank 31 configured to store therein the plating liquid 35 to be supplied onto the substrate 2, a discharge nozzle 32 configured to discharge the plating liquid 35 onto the substrate 2 and a plating liquid supplying line 33 through which the plating liquid 35 within the supply tank 31 is supplied into the discharge nozzle 32. Further, an ammonia gas storage unit 170 is connected to the supply tank 31, and a concentration of an ammonia component within the plating liquid 35 stored in the supply tank 31 can be maintained within a preset target range.
摘要翻译： 电镀装置20具有：基板保持旋转装置110，被配置为保持和旋转基板2;以及电镀液供给装置30，其被配置为将电镀液体35供给到基板2上。电镀液供给装置30具有供给槽31 被配置为在其中存储供给到基板2上的镀液35，将镀液33排出到基板2上的排出喷嘴32和供给槽31内的镀液35通过该电镀液供给路33 供给到排出喷嘴32.此外，氨气体收容部170与供给罐31连接，能够将储存在供给槽31内的镀液35内的氨成分浓度维持在预先设定的目标范围内。
-
公开(公告)号：US09505019B2
公开(公告)日：2016-11-29
申请号：US14129623
申请日：2012-06-04
CPC分类号： B05C5/001 , B05D1/02 , C23C18/1619 , C23C18/1669 , C23C18/1676 , C23C18/168
摘要： A plating apparatus of performing a plating process by supplying a plating liquid onto a substrate includes a substrate holding/rotating device configured to hold and rotate the substrate; a discharging device configured to discharge the plating liquid toward the substrate; a plating liquid supplying device configured to supply the plating liquid to the discharging device; and a controller configured to control the discharging device and the plating liquid supplying device. Further, the discharging device includes a first nozzle having a discharge opening, and a second nozzle having a discharge opening configured to be positioned closer to a central portion of the substrate than the discharge opening of the first nozzle. Furthermore, the plating liquid supplying device is configured to set a temperature of the plating liquid supplied to the first nozzle to be higher than a temperature of the plating liquid supplied to the second nozzle.
摘要翻译： 通过将电镀液体供给到基板上进行电镀处理的电镀装置包括：基板保持旋转装置，其构造成保持和旋转基板; 排出装置，被配置为将所述电镀液体朝向所述基板排出; 电镀液供给装置，其配置为将电镀液体供给到排出装置; 以及控制器，其被配置为控制所述排出装置和所述电镀液供给装置。 此外，排出装置包括具有排出口的第一喷嘴和具有排出口的第二喷嘴，其被配置为比第一喷嘴的排出口更靠近基板的中心部。 此外，电镀液供给装置被配置为将供给到第一喷嘴的电镀液的温度设定为高于供给到第二喷嘴的电镀液的温度。
-
公开(公告)号：US20150232994A1
公开(公告)日：2015-08-20
申请号：US14129698
申请日：2012-06-04
CPC分类号： C23C18/163 , C23C18/1619 , C23C18/1632 , C23C18/1655 , C23C18/1669 , C23C18/1675 , C23C18/1676 , C23C18/168 , C23C18/18 , C23C18/50 , H05K3/187 , H05K2203/0165 , H05K2203/072 , H05K2203/075
摘要： A plating apparatus can perform a plating process on an entire surface of a substrate uniformly. A plating apparatus 20 includes a substrate holding/rotating device 110 configured to hold and rotate a substrate 2; a discharging device 21 configured to discharge a plating liquid toward the substrate 2 held on the substrate holding/rotating device 110; and a controller 160 configured to control the substrate holding/rotating device 110 and the discharging device 21. Further, the discharging device 21 includes a first nozzle 40 having a multiple number of discharge openings 41 arranged in a radial direction of the substrate 2 or having a discharge opening 42 extended in the radial direction of the substrate 2; and a second nozzle 45 having a discharge opening 46 configured to be positioned closer to a central portion of the substrate 2 than the discharge opening of the first nozzle 40.
摘要翻译： 电镀装置可以均匀地对基板的整个表面进行电镀处理。 电镀装置20包括被配置为保持和旋转衬底2的衬底保持/旋转装置110; 排出装置21，被配置为将电镀液体朝向保持在基板保持旋转装置110上的基板2排出; 以及配置为控制基板保持/旋转装置110和排出装置21的控制器160.此外，排出装置21包括：第一喷嘴40，其具有沿基板2的径向配置的多个排出口41，或具有 沿基板2的径向延伸的排出口42; 以及第二喷嘴45，其具有被配置为比第一喷嘴40的排出口更靠近基板2的中心部分的排出口46。
-
公开(公告)号：US20140134345A1
公开(公告)日：2014-05-15
申请号：US14129623
申请日：2012-06-04
CPC分类号： B05C5/001 , B05D1/02 , C23C18/1619 , C23C18/1669 , C23C18/1676 , C23C18/168
摘要： A plating apparatus of performing a plating process by supplying a plating liquid onto a substrate includes a substrate holding/rotating device configured to hold and rotate the substrate; a discharging device configured to discharge the plating liquid toward the substrate; a plating liquid supplying device configured to supply the plating liquid to the discharging device; and a controller configured to control the discharging device and the plating liquid supplying device. Further, the discharging device includes a first nozzle having a discharge opening, and a second nozzle having a discharge opening configured to be positioned closer to a central portion of the substrate than the discharge opening of the first nozzle. Furthermore, the plating liquid supplying device is configured to set a temperature of the plating liquid supplied to the first nozzle to be higher than a temperature of the plating liquid supplied to the second nozzle.
摘要翻译： 通过将电镀液体供给到基板上进行电镀处理的电镀装置包括：基板保持旋转装置，其构造成保持和旋转基板; 排出装置，被配置为将所述电镀液体朝向所述基板排出; 电镀液供给装置，其配置为将电镀液体供给到排出装置; 以及控制器，其被配置为控制所述排出装置和所述电镀液供给装置。 此外，排出装置包括具有排出口的第一喷嘴和具有排出口的第二喷嘴，其被配置为比第一喷嘴的排出口更靠近基板的中心部分。 此外，电镀液供给装置被配置为将供给到第一喷嘴的电镀液的温度设定为高于供给到第二喷嘴的电镀液的温度。
-
公开(公告)号：US20120183909A1
公开(公告)日：2012-07-19
申请号：US13499362
申请日：2010-08-20
IPC分类号： G03F7/30
CPC分类号： G03F7/3021 , G03F7/405 , H01L21/6715
摘要： A developing treatment method includes: a treatment solution supplying step of supplying a treatment solution made by diluting a hydrophobizing agent hydrophobizing a resist pattern with hydrofluoroether onto a substrate on which a rinse solution has been supplied after development of the resist pattern; a hydrophobic treatment stabilizing step of stabilizing a hydrophobic treatment of the resist pattern with the supply of the treatment solution stopped and rotation of the substrate almost stopped; and a treatment solution removing step of removing the treatment solution from a top of the substrate on which the treatment solution has been supplied. The hydrophobizing agent is trimethylsilyldimethyl-amine.
摘要翻译： 显影处理方法包括：处理溶液供给步骤，通过在形成抗蚀剂图案后，向其上提供了冲洗溶液供给的基板上，将通过将氢氟醚疏水化的疏水化剂稀释而成的处理液供给; 疏水性处理稳定化步骤，在停止供给处理液的同时稳定抗蚀剂图案的疏水处理，并且基板的旋转几乎停止; 以及从已经供给了处理液的基板的顶部除去处理液的处理液除去工序。 疏水化剂是三甲基甲硅烷基二甲基胺。
-
公开(公告)号：US08691497B2
公开(公告)日：2014-04-08
申请号：US13499362
申请日：2010-08-20
IPC分类号： G03F7/40
CPC分类号： G03F7/3021 , G03F7/405 , H01L21/6715
摘要： A developing treatment method includes: a treatment solution supplying step of supplying a treatment solution made by diluting a hydrophobizing agent hydrophobizing a resist pattern with hydrofluoroether onto a substrate on which a rinse solution has been supplied after development of the resist pattern; a hydrophobic treatment stabilizing step of stabilizing a hydrophobic treatment of the resist pattern with the supply of the treatment solution stopped and rotation of the substrate almost stopped; and a treatment solution removing step of removing the treatment solution from a top of the substrate on which the treatment solution has been supplied. The hydrophobizing agent is trimethylsilyldimethyl-amine.
摘要翻译： 显影处理方法包括：处理溶液供给步骤，通过在形成抗蚀剂图案后，向其上提供了冲洗溶液供给的基板上，将通过将氢氟醚疏水化的疏水化剂稀释而成的处理液供给; 疏水性处理稳定化步骤，在停止供给处理液的同时稳定抗蚀剂图案的疏水处理，并且基板的旋转几乎停止; 以及从已经供给了处理液的基板的顶部除去处理液的处理液除去工序。 疏水化剂是三甲基甲硅烷基二甲基胺。
-
8.发明申请SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING SYSTEM, AND STORAGE MEDIUM 审中-公开基板处理方法，基板处理系统和存储介质公开(公告)号：US20080199617A1
公开(公告)日：2008-08-21
申请号：US12031101
申请日：2008-02-14
CPC分类号： H01L21/6715 , H01L21/6708
摘要： In the present invention, a resist pattern size shrink liquid is applied onto a resist pattern of the substrate. The substrate is then heated, whereby a lower layer portion of the resist pattern size shrink liquid in contact with the front surface of the resist pattern is changed in quality to insoluble to pure water. An upper layer portion of the resist pattern size shrink liquid is then removed with the removing solution. In this removing step, a solution film of pure water is first formed on the substrate with the substrate at rest to dissolve the upper layer portion of the resist pattern size shrink liquid by the solution film of pure water. Pure water is then supplied to the substrate with the substrate being rotated to remove the upper layer portion of the resist pattern size shrink liquid from a top of the substrate. The substrate is then rotated to be dried.
摘要翻译： 在本发明中，将抗蚀剂图案尺寸的收缩液施加到基板的抗蚀剂图案上。 然后加热基板，由此抗蚀剂图案尺寸收缩液体的下层部分与抗蚀剂图案的前表面接触的质量被改变为不溶于纯水。 然后用去除溶液除去抗蚀剂图案尺寸的收缩液的上层部分。 在该除去工序中，首先在基板上形成纯水溶液膜，使基板静置，以通过纯水的溶液膜溶解抗蚀图案尺寸的收缩液的上层部分。 然后将纯水提供给基板，旋转基板以从基板的顶部除去抗蚀剂图案尺寸收缩液体的上层部分。 然后将基底旋转以干燥。
-
9.发明授权Method for improving surface roughness of processed film of substrate and apparatus for processing substrate 有权改善基板的加工膜的表面粗糙度的方法和基板的处理装置公开(公告)号：US08646403B2
公开(公告)日：2014-02-11
申请号：US12574503
申请日：2009-10-06
申请人： Yuichiro Inatomi
发明人： Yuichiro Inatomi
CPC分类号： H01L21/0273 , G03F7/40 , H01L21/67109 , H01L21/6715 , H01L21/67178
摘要： A treatment apparatus for treating a substrate on a surface of which a treatment film has been formed and subjected to exposure processing and developing treatment. The treatment apparatus includes a nozzle for supplying a solvent gas of the treatment film to the surface of the treatment film on the substrate, and a moving mechanism for moving the nozzle which is supplying the solvent gas, relative to the substrate. The nozzle has an elongated discharge portion at least longer than a diameter of the substrate and partition plates at a front and a rear in the moving direction of the nozzle.
摘要翻译： 一种用于处理已经形成处理膜的表面上的基底并进行曝光处理和显影处理的处理装置。 处理装置包括用于将处理膜的溶剂气体供给到基板上的处理膜的表面的喷嘴，以及相对于基板移动供给溶剂气体的喷嘴的移动机构。 所述喷嘴具有至少比所述基板的直径和所述喷嘴的移动方向上的前后的分隔板长的细长的排出部。
-
公开(公告)号：US07600933B2
公开(公告)日：2009-10-13
申请号：US12260637
申请日：2008-10-29
申请人： Taro Yamamoto , Hideo Funakoshi , Yuichiro Inatomi
发明人： Taro Yamamoto , Hideo Funakoshi , Yuichiro Inatomi
CPC分类号： G03F7/40 , H01L21/67051
摘要： A substrate processing apparatus includes a substrate holding stage to hold a substrate having a surface facing up, the substrate having an exposed and developed resist pattern over the surface, a rotation driving mechanism to rotate the substrate holding stage around a vertical axis, a solvent vapor discharge nozzle having a discharge hole capable of discharging solvent vapor to swell the resist pattern onto the surface of the substrate and a vacuum opening capable of absorbing the solvent vapor discharged from the discharge hole, and a moving mechanism to move the solvent vapor discharge nozzle from an edge to a center of the substrate. The substrate is rotated around the vertical axis while moving the solvent vapor discharge nozzle from the edge to the center of the substrate, discharging the solvent vapor from the discharge hole, to supply the solvent vapor over the substrate in a spiral manner.
摘要翻译： 基板处理装置包括：基板保持台，用于保持表面朝上的基板，基板在表面上具有暴露和显影的抗蚀剂图案;旋转驱动机构，用于使基板保持台绕垂直轴旋转，溶剂蒸气 排出口具有能够排出溶剂蒸汽的排出孔，将抗蚀剂图案溶胀到基板的表面上，以及能够吸收从排出孔排出的溶剂蒸气的真空开口，以及使溶剂蒸气喷出口从 边缘到基板的中心。 将溶剂蒸气喷嘴从边缘移动到基板的中心，使排出孔排出溶剂蒸气，使螺旋状的溶剂蒸气供给到基板上。
-
-
-
-
-
-
-
-
-
搜索结果
24 条记录 (耗时 0.02 秒)