公开(公告)号：US20120244659A1

公开(公告)日：2012-09-27

申请号：US13422241

申请日：2012-03-16

申请人： Yuki IMOTO ,  Tetsunori MARUYAMA ,  Toru TAKAYAMA

发明人： Yuki IMOTO ,  Tetsunori MARUYAMA ,  Toru TAKAYAMA

IPC分类号： H01L21/42

CPC分类号： H01L29/7869 ,  H01L29/66969

摘要： A method for forming an oxide semiconductor film having favorable semiconductor characteristics is provided. In addition, a method for manufacturing a semiconductor device having favorable electric characteristics, with use of the oxide semiconductor film is provided. A method for forming an oxide semiconductor film including the steps of forming an oxide semiconductor film, forming a hydrogen permeable film over and in contact with the oxide semiconductor film, forming a hydrogen capture film over and in contact with the hydrogen permeable film, and releasing hydrogen from the oxide semiconductor film by performing heat treatment. Further, in a method for manufacturing a semiconductor device, the method for forming an oxide semiconductor film is used.

摘要翻译： 提供了形成具有良好的半导体特性的氧化物半导体膜的方法。 此外，提供了利用氧化物半导体膜制造具有良好电特性的半导体器件的方法。 一种形成氧化物半导体膜的方法，包括以下步骤：形成氧化物半导体膜，在氧化物半导体膜上形成氢可渗透膜并与其接触，在氢可渗透膜上形成氢捕获膜并与氢可渗透膜接触 通过进行热处理来自氧化物半导体膜的氢。 此外，在半导体器件的制造方法中，使用形成氧化物半导体膜的方法。

公开(公告)号：US20110140205A1

公开(公告)日：2011-06-16

申请号：US12965197

申请日：2010-12-10

申请人： Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO

发明人： Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/124 ,  H01L29/24

摘要： Many of the physical properties of a silicon semiconductor have already been understood, whereas many of the physical properties of an oxide semiconductor have been still unclear. In particular, an adverse effect of an impurity on an oxide semiconductor has been still unclear. In view of the above, a structure is disclosed in which an impurity that influences electrical characteristics of a semiconductor device including an oxide semiconductor layer is prevented or is eliminated. A semiconductor device which includes a gate electrode, an oxide semiconductor layer, and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer and in which the nitrogen concentration in the oxide semiconductor layer is 1×1020 atoms/cm3 or less is provided.

摘要翻译： 已经理解了硅半导体的许多物理性质，而氧化物半导体的许多物理性质仍然不清楚。 特别是杂质对氧化物半导体的不利影响还不清楚。 鉴于上述，公开了防止或消除影响包括氧化物半导体层的半导体器件的电特性的杂质的结构。 设置在栅电极和氧化物半导体层之间并且氧化物半导体层中的氮浓度为1×1020原子/ cm3以下的栅极，氧化物半导体层和栅极绝缘层的半导体装置为 提供。

公开(公告)号：US20130011962A1

公开(公告)日：2013-01-10

申请号：US13603484

申请日：2012-09-05

申请人： Shunpei YAMAZAKI ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Hitomi SATO ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Takashi SHIMAZU

发明人： Shunpei YAMAZAKI ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Hitomi SATO ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Takashi SHIMAZU

IPC分类号： H01L21/363 ,  C23C14/08 ,  C23C14/34

CPC分类号： C23C14/08 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

摘要翻译： 已经有使用氧化物半导体形成的晶体管的可靠性与使用非晶硅形成的晶体管的可靠性差。 因此，在本发明中，制造了包括使用氧化物半导体形成的高可靠性晶体管的半导体器件。 使用包含具有结晶性的氧化物半导体的溅射靶，通过溅射法沉积氧化物半导体膜，并且其中晶体的c轴方向平行于氧化物半导体的顶表面的法向矢量。 通过混合原料形成靶，使其组成比可以得到晶体结构。

公开(公告)号：US20120241736A1

公开(公告)日：2012-09-27

申请号：US13422244

申请日：2012-03-16

申请人： Yuki IMOTO ,  Tetsunori MARUYAMA ,  Yuta ENDO

发明人： Yuki IMOTO ,  Tetsunori MARUYAMA ,  Yuta ENDO

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/7869

摘要： In the transistor including an oxide semiconductor film, a gate insulating film of the transistor including an oxide semiconductor film has a stacked-layer structure of the hydrogen capture film and the hydrogen permeable film. At this time, the hydrogen permeable film is formed on a side which is in contact with the oxide semiconductor film, and the hydrogen capture film is formed on a side which is in contact with a gate electrode. After that, hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment.

摘要翻译： 在包括氧化物半导体膜的晶体管中，包括氧化物半导体膜的晶体管的栅极绝缘膜具有氢捕获膜和氢可渗透膜的堆叠层结构。 此时，氢氧渗透膜形成在与氧化物半导体膜接触的一侧，并且氢捕获膜形成在与栅电极接触的一侧上。 之后，通过热处理从氧化物半导体膜释放的氢气通过氢可渗透膜转移到氢捕获膜。

公开(公告)号：US20100163874A1

公开(公告)日：2010-07-01

申请号：US12641446

申请日：2009-12-18

申请人： Jun KOYAMA ,  Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

发明人： Jun KOYAMA ,  Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

IPC分类号： H01L27/06

CPC分类号： H01L27/1255 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/127 ,  H01L28/20 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/7869

摘要： The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

摘要翻译： 通过使用含有氢化合物如硅烷（SiH 4）和氨（NH 3）的气体的等离子体CVD形成的氮化硅层910设置在与用于电阻器354的氧化物半导体层905上并直接接触，并且氮化硅 在用于薄膜晶体管355的氧化物半导体层906上设置层910，氧化硅层909用作阻挡层。 因此，与氧化物半导体层906相比，在氧化物半导体层905中引入更高浓度的氢。结果，使用于电阻器354的氧化物半导体层905的电阻比氧化物半导体层的电阻低 906用于薄膜晶体管355。

公开(公告)号：US20120241738A1

公开(公告)日：2012-09-27

申请号：US13422251

申请日：2012-03-16

申请人： Yuki IMOTO ,  Tetsunori MARUYAMA ,  Yuta ENDO

发明人： Yuki IMOTO ,  Tetsunori MARUYAMA ,  Yuta ENDO

IPC分类号： H01L29/786 ,  H01L21/36

CPC分类号： H01L29/7869 ,  H01L27/3274 ,  H01L51/0545

摘要： A semiconductor device having excellent electric characteristics and a method for manufacturing the semiconductor device are provided. A method for manufacturing a semiconductor device includes the steps of: forming a gate electrode; forming a gate insulating film to cover the gate electrode; forming an oxide semiconductor film over the gate insulating film; forming a hydrogen permeable film over the oxide semiconductor film; forming a hydrogen capture film over the hydrogen permeable film; performing heat treatment to release hydrogen from the oxide semiconductor film; forming a source electrode and a drain electrode to be in contact with a part of the oxide semiconductor film; and removing an exposed portion of the hydrogen capture film to form a channel protective film formed of the hydrogen permeable film. A semiconductor device manufactured by the above method is also provided.

摘要翻译： 提供了具有优异的电特性的半导体器件和制造该半导体器件的方法。 一种制造半导体器件的方法包括以下步骤：形成栅电极; 形成栅绝缘膜以覆盖栅电极; 在所述栅极绝缘膜上形成氧化物半导体膜; 在所述氧化物半导体膜上形成氢渗透膜; 在氢可渗透膜上形成氢捕获膜; 进行热处理以从氧化物半导体膜释放氢; 形成与所述氧化物半导体膜的一部分接触的源电极和漏电极; 并除去氢捕获膜的暴露部分以形成由氢可渗透膜形成的通道保护膜。 还提供了通过上述方法制造的半导体器件。

公开(公告)号：US20120241737A1

公开(公告)日：2012-09-27

申请号：US13422247

申请日：2012-03-16

申请人： Yuki IMOTO ,  Tetsunori MARUYAMA ,  Yuta ENDO

发明人： Yuki IMOTO ,  Tetsunori MARUYAMA ,  Yuta ENDO

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/7869 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

摘要： In the transistor including an oxide semiconductor film, which includes a film for capturing hydrogen from the oxide semiconductor film (a hydrogen capture film) and a film for diffusing hydrogen (a hydrogen permeable film), hydrogen is transferred from the oxide semiconductor film to the hydrogen capture film through the hydrogen permeable film by heat treatment. Specifically, a base film or a protective film of the transistor including an oxide semiconductor film has a stacked-layer structure of the hydrogen capture film and the hydrogen permeable film. At this time, the hydrogen permeable film is formed on a side which is in contact with the oxide semiconductor film. After that, hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment.

摘要翻译： 在包括氧化物半导体膜的晶体管中，其包括用于从氧化物半导体膜（氢捕获膜）捕获氢的膜和用于扩散氢的膜（氢可渗透膜），氢从氧化物半导体膜转移到 通过热处理通过氢气渗透膜的氢捕获膜。 具体地，包含氧化物半导体膜的晶体管的基膜或保护膜具有氢捕获膜和氢可渗透膜的堆叠层结构。 此时，氢氧渗透膜形成在与氧化物半导体膜接触的一侧。 之后，通过热处理从氧化物半导体膜释放的氢气通过氢可渗透膜转移到氢捕获膜。

公开(公告)号：US20100117073A1

公开(公告)日：2010-05-13

申请号：US12612021

申请日：2009-11-04

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L29/66742 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

摘要： In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers.

摘要翻译： 在使用氧化物半导体的薄膜晶体管中，在氧化物半导体层和源极和漏极电极层之间设置包含铟，镓，锌，氧和氮的缓冲层。

公开(公告)号：US20100109058A1

公开(公告)日：2010-05-06

申请号：US12609032

申请日：2009-10-30

申请人： Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

发明人： Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

IPC分类号： H01L29/78 ,  H01B1/06 ,  B05D5/12 ,  C23C14/34

CPC分类号： C23C14/5846 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  C23C14/0057 ,  C23C14/0676 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869

摘要： An electrode formed using a transparent conductive oxide is likely to be crystallized by heat treatment performed in the manufacturing process of a semiconductor device. In the case of a thin film element using an electrode having a significantly uneven surface due to crystallization, a short circuit is likely to occur and thus reliability of the element is degraded. An object is to provide a light-transmitting conductive oxynitride which is not crystallized even if subjected to heat treatment and a manufacturing method thereof. It is found that an oxynitride containing indium, gallium, and zinc, to which hydrogen atoms are added as impurities, is a light-transmitting conductive film which is not crystallized even if heated at 350° C. and the object is achieved.

摘要翻译： 使用透明导电氧化物形成的电极可能通过在半导体器件的制造过程中进行的热处理而结晶化。 在使用由于结晶而具有显着不平坦表面的电极的薄膜元件的情况下，可能发生短路，因此元件的可靠性降低。 本发明的目的是提供即使经受热处理也不结晶的透光导电氮氧化物及其制造方法。 发现含有氢原子作为杂质的含有铟，镓和锌的氮氧化物是透光性导电膜，即使在350℃下加热也不会结晶，实现了目的。

公开(公告)号：US20120132902A1

公开(公告)日：2012-05-31

申请号：US13295469

申请日：2011-11-14

申请人： Yuki IMOTO ,  Yuji ASANO ,  Tetsunori MARUYAMA

发明人： Yuki IMOTO ,  Yuji ASANO ,  Tetsunori MARUYAMA

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L21/823456 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66742 ,  H01L29/66969 ,  H01L51/0554

摘要： A normally-off transistor having an oxide semiconductor layer in a channel formation layer is provided. The transistor comprises: a first oxide semiconductor layer functioning as a channel formation region; a source electrode layer and a drain electrode layer which overlap with the first oxide semiconductor layer; a gate insulating layer which is provided over and in contact with the first oxide semiconductor layer, the source electrode layer, and the drain electrode layer; a second oxide semiconductor layer which is provided over and in contact with the gate insulating layer and overlaps with the first oxide semiconductor layer; and a gate electrode layer provided over the second oxide semiconductor layer. A manufacturing method thereof is also disclosed.

摘要翻译： 提供了在通道形成层中具有氧化物半导体层的常关晶体管。 晶体管包括：用作沟道形成区域的第一氧化物半导体层; 源极电极层和与第一氧化物半导体层重叠的漏电极层; 栅极绝缘层，设置在第一氧化物半导体层上，与源极电极层和漏极电极层接触; 第二氧化物半导体层，设置在栅极绝缘层上并与栅极绝缘层接触并与第一氧化物半导体层重叠; 以及设置在所述第二氧化物半导体层上的栅电极层。 还公开了其制造方法。