摘要:
A transistor formed on a semiconductor substrate has a gate electrode formed via a gate insulating film and first and second diffusion layers formed in the semiconductor substrate, the first and second diffusion layers being positioned at both sides of the gate electrode. A first electrode is connected to the first diffusion layer of the transistor. A capacitor insulating film formed on the first electrode is formed of a silicon oxide film containing a substrate which is faster than Cu in diffusion velocity and which more readily reacts with oxygen than Cu does. A second electrode formed on the capacitor insulating film is formed of one of a Cu layer and another Cu layer containing the substance.
摘要:
In one aspect of the present invention, a semiconductor device may include an inter-wiring dielectric film in which a wiring trench is formed, a metal wiring layer formed in the wiring trench in the inter-wiring dielectric film, a first barrier layer formed on a side surface of the wiring trench, the first barrier layer being an oxide film made from a metal different from a main constituent metal element in the wiring layer, a second barrier layer formed on a side surface of the wiring layer, the second barrier layer having a Si atom of the metal used in the wiring layer, and a gap formed between the first barrier layer and the second barrier layer.
摘要:
A semiconductor device includes: a copper (Cu) wire having a first region and a second region in which densities of silicon (Si) and oxygen (O) atoms are higher than in the first region; a compound film that is selectively formed on the Cu wire and contains Cu and Si; and a dielectric film formed on a side surface side of the Cu wire.
摘要:
A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a first film containing a metal whose energy for forming silicide thereof is lower than that of Cu silicide inside the opening; forming a second film that is conductive and contains copper (Cu) in the opening in which the first film containing the metal is formed; and forming a compound film containing Cu and silicon (Si) selectively on the second film in an atmosphere in which a temperature of the substrate is below 300° C.
摘要:
According to one embodiment, a semiconductor device includes a first insulating film formed on a substrate and including a first area and a second area; a groove formed in the first area of the first insulating film; a plurality of first wiring lines formed in the groove and on the first insulating film, and a second insulating film covering a top surface of the first insulating film and top surfaces of the first wiring lines, the plurality of first wiring lines are parallel to a sidewall of the groove and apart from each other with a first predetermined distance, and the first wiring line closest to the sidewall is apart from the sidewall with a second predetermined distance.
摘要:
According to one embodiment, a semiconductor device includes a first insulating layer provided in a first area and in a second area, a line-and-space-like second insulating layer formed on the first insulating layer provided in the first area, and a third insulating layer formed on the first insulating layer provided in the second area and which is substantially identical to the second insulating layer in height.
摘要:
A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a first film containing a metal whose energy for forming silicide thereof is lower than that of Cu silicide inside the opening; forming a second film that is conductive and contains copper (Cu) in the opening in which the first film containing the metal is formed; and forming a compound film containing Cu and silicon (Si) selectively on the second film in an atmosphere in which a temperature of the substrate is below 300° C.
摘要:
In one embodiment, a method of manufacturing a semiconductor device includes sequentially forming a first insulator, a second insulator, and a sacrificial layer on a semiconductor substrate, and forming plural core materials from the sacrificial layer and the second insulator. The method further includes forming first and second interconnects on side surfaces of each core material to form plural first interconnects and plural second interconnects alternately, each first interconnect having a first side surface in contact with a core material and a second side surface positioned on an opposite side of the first side surface, and each second interconnect having a third side surface in contact with a core material and a fourth side surface positioned on an opposite side of the third side surface. The method further includes removing the sacrificial layer so that the second insulator remains, after the first and second interconnects are formed.
摘要:
A semiconductor device comprising a wiring suitable for miniaturization and manufacturing method thereof are disclosed. According to one aspect of the present invention, it is provided a semiconductor device comprising an insulator formed above a semiconductor substrate, and a wiring formed in the insulator and having surface roughness capable of suppressing surface scattering of electrons and reduction in electrical conductivity thereof.