Method of forming a solute-enriched layer in a substrate surface and article formed thereby
    3.
    发明授权
    Method of forming a solute-enriched layer in a substrate surface and article formed thereby 有权
    在基材表面形成富含溶质层的方法和由此形成的制品

    公开(公告)号:US06413866B1

    公开(公告)日:2002-07-02

    申请号:US09525367

    申请日:2000-03-15

    IPC分类号: H01L2144

    摘要: A method of enriching the surface of a substrate with a solute material that was originally dissolved in the substrate material, to yield a uniform dispersion of the solute material at the substrate surface. The method generally entails the use of a solvent material that is more reactive than the solute material to a chosen reactive agent. The surface of the substrate is reacted with the reactive agent to preferentially form a reaction compound of the solvent material at the surface of the substrate. As the compound layer develops, the solute material segregates or diffuses out of the compound layer and into the underlying substrate, such that the region of the substrate nearest the compound layer becomes enriched with the solute material. At least a portion of the compound layer is then removed without removing the underlying enriched region of the substrate. For microcircuit applications, the method can be used to enrich the surface of an aluminum line with elemental copper to improve the electromigration resistance of the line.

    摘要翻译: 一种使用最初溶解在基片材料中的溶质材料来富集基片的表面的方法,以使溶质材料在基片表面上均匀分散。 该方法通常需要使用比溶质材料对选择的反应剂更具反应性的溶剂材料。 使基板的表面与反应剂反应,以优先在基材的表面形成溶剂材料的反应化合物。 当化合物层发展时,溶质材料从化合物层中分离或扩散到下面的衬底中,使得最接近化合物层的衬底的区域变得富集溶质材料。 然后除去化合物层的至少一部分而不去除底物的下面的富集区域。 对于微电路应用,该方法可用于通过元素铜来丰富铝线的表面,以提高线路的电迁移能力。

    Extended trench for preventing interaction between components of stacked capacitors
    6.
    发明授权
    Extended trench for preventing interaction between components of stacked capacitors 有权
    扩展沟槽,用于防止堆叠电容器组件之间的相互作用

    公开(公告)号:US06222220B1

    公开(公告)日:2001-04-24

    申请号:US09209198

    申请日:1998-12-10

    IPC分类号: H01L31119

    CPC分类号: H01L27/10852

    摘要: A stacked capacitor, in accordance with the present invention includes a conductive plug disposed within a trench for connecting to an access device. A barrier is formed on the plug and is disposed within the trench. A dielectric layer is formed over the trench, the dielectric layer forming a hole therethrough exposing at least a portion of the barrier. A first electrode is formed within the hole and extends from the hole. A capacitor dielectric layer is formed on the first electrode and separating the first electrode from a second electrode, and the dielectric layer and the first electrode substantially prevent chemical interactions between materials of the barrier and materials of the capacitor dielectric layer and an oxidizing environment used to form the capacitor dielectric layer. A method of fabrication is also included.

    摘要翻译: 根据本发明的层叠电容器包括设置在沟槽内用于连接到接入装置的导电插头。 在插头上形成屏障并设置在沟槽内。 在沟槽上形成电介质层,电介质层形成穿过其的至少一部分屏障的孔。 第一电极形成在孔内并从孔延伸。 电容器电介质层形成在第一电极上,并且将第一电极与第二电极分开,并且电介质层和第一电极基本上防止了阻挡材料和电容器介电层的材料之间的化学相互作用以及用于 形成电容器介电层。 还包括制造方法。

    Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materials
    8.
    发明授权
    Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materials 失效
    用于DRAM的多层Pt电极和具有高K电介质材料的FRAM

    公开(公告)号:US06794705B2

    公开(公告)日:2004-09-21

    申请号:US09751551

    申请日:2000-12-28

    IPC分类号: H01L27108

    摘要: A multi-layer electrode (246) and method of fabrication thereof in which a conductive region (244) is separated from a barrier layer (222) by a first conductive liner (240) and a second conductive liner (242). First conductive layer (240) comprises Pt, and second conductive liner (242) comprises a thin layer of conductive oxide. The multi-layer electrode (246) prevents oxygen diffusion through the top conductive region (244) and reduces material variation during electrode patterning.

    摘要翻译: 一种多层电极(246)及其制造方法,其中通过第一导电衬垫(240)和第二导电衬套(242)将导电区域(244)与阻挡层(222)分离。 第一导电层(240)包括Pt,并且第二导电衬垫(242)包括导电氧化物的薄层。 多层电极(246)防止氧扩散通过顶部导电区域(244)并且减少电极图案化期间的材料变化。

    CMP uniformity
    9.
    发明授权
    CMP uniformity 有权
    CMP均匀性

    公开(公告)号:US06685796B1

    公开(公告)日:2004-02-03

    申请号:US09639986

    申请日:2000-08-16

    IPC分类号: H01L21306

    CPC分类号: B24B37/04 B24B57/02

    摘要: Improved CMP uniformity is achieved by providing improved control of the slurry distribution. Improved slurry distribution is achieved by, for example, the use of a slurry dispenser that dispenses slurry from a plurality of dispensing points. Providing a squeeze bar between the slurry dispenser and wafer to redistribute the slurry also improves the slurry distribution.

    摘要翻译: 通过提供浆料分布的改进控制来实现改进的CMP均匀性。 通过例如使用从多个分配点分配浆料的浆料分配器来实现改进的浆料分布。 在浆料分配器和晶片之间提供挤压棒以重新分配浆料也改善了浆料分布。