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    Semiconductor device
    4.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US07754570B2

    公开(公告)日：2010-07-13

    申请号：US11210873

    申请日：2005-08-25

    申请人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka ,  Toshiyuki Iwamoto

    发明人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka ,  Toshiyuki Iwamoto

    IPC分类号： H01L21/336

    CPC分类号： H01L29/518 ,  H01L21/0214 ,  H01L21/02142 ,  H01L21/2652 ,  H01L21/2658 ,  H01L21/28185 ,  H01L21/28238 ,  H01L21/3115 ,  H01L21/3141 ,  H01L21/31645 ,  H01L21/823807 ,  H01L21/823828 ,  H01L21/823842 ,  H01L29/1033

    摘要： Threshold voltage of a field effect transistor is successfully adjusted with a smaller dose of an impurity, as compared with a conventional adjustment of the threshold voltage only by doping an impurity into the channel region. A semiconductor device 100 has a silicon substrate 101 and a P-type MOSFET 103 comprising a SiON film 113 formed on the silicon substrate 101, and a polycrystalline silicon film 106. Any one of, or two or more of metals selected from the group consisting of Hf, Zr, Al, La, Pr, Y, Ti, Ta and W are allowed to reside at the interface 115 between the polycrystalline silicon film 106 and the SiON film 113, and concentration of the metal(s) at the interface 115 is adjusted to 5×1013 atoms/cm2 or more and less than 1.4×1015 atoms/cm2.

    摘要翻译： 与仅通过将杂质掺杂到沟道区域中的阈值电压的常规调节相比，场效应晶体管的阈值电压被成功地用较小剂量的杂质调节。 半导体器件100具有硅衬底101和包括形成在硅衬底101上的SiON膜113的P型MOSFET 103和多晶硅膜106.选自以下的金属中的任何一种或两种以上选自 的Hf，Zr，Al，La，Pr，Y，Ti，Ta和W被放置在多晶硅膜106和SiON膜113之间的界面115处，并且界面115处的金属的浓度 调整为5×1013原子/ cm 2以上且小于1.4×1015原子/ cm 2。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07238996B2

    公开(公告)日：2007-07-03

    申请号：US11129439

    申请日：2005-05-16

    申请人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka ,  Toshiyuki Iwamoto ,  Motofumi Saitoh ,  Hirohito Watanabe ,  Ayuka Tada

    发明人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka ,  Toshiyuki Iwamoto ,  Motofumi Saitoh ,  Hirohito Watanabe ,  Ayuka Tada

    IPC分类号： H01L29/70

    CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517

    摘要： A semiconductor device 100 comprises a silicon substrate 102, an N-type MOSFET 118 including a high concentration-high dielectric constant film 108b formed on the silicon substrate 102 and a polycrystalline silicon film 114, and a P-type MOSFET 120 including a low concentration-high dielectric constant film 108a and a polycrystalline silicon film 114 formed on the semiconductor substrate 102 to be juxtaposed to the N-type MOSFET 118. The low concentration-high dielectric constant film 108a and the high concentration-high dielectric constant film 108b are composed of a material containing one or more element (s) selected from a group consisting of Hf and Zr. The concentration of the above-described metallic element contained in the low concentration-high dielectric constant film 108a is lower than that contained in the high concentration-high dielectric constant film 108b.

    摘要翻译： 半导体器件100包括硅衬底102，包括形成在硅衬底102上的高浓度 - 高介电常数膜108b和多晶硅膜114的N型MOSFET 118以及包括低电平的P型MOSFET 120 浓度高介电常数膜108a和形成在半导体衬底102上并与N型MOSFET 118并置的多晶硅膜114。 低浓度 - 高介电常数膜108a和高浓度 - 高介电常数膜108b由含有选自Hf和Zr的一种或多种元素的材料构成。 包含在低浓度 - 高介电常数膜108a中的上述金属元素的浓度低于高浓度 - 高介电常数膜108b中包含的金属元素的浓度。

    Semiconductor device
    6.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US20050263802A1

    公开(公告)日：2005-12-01

    申请号：US11129439

    申请日：2005-05-16

    申请人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka ,  Toshiyuki Iwamoto ,  Motofumi Saitoh ,  Hirohito Watanabe ,  Ayuka Tada

    发明人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka ,  Toshiyuki Iwamoto ,  Motofumi Saitoh ,  Hirohito Watanabe ,  Ayuka Tada

    IPC分类号： H01L27/092 ,  H01L21/28 ,  H01L21/3115 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/51 ,  H01L29/76 ,  H01L29/78

    CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517

    摘要： A semiconductor device 100 comprises a silicon substrate 102, an N-type MOSFET 118 including a high concentration-high dielectric constant film 108b formed on the silicon substrate 102 and a polycrystalline silicon film 114, and a P-type MOSFET 120 including a low concentration-high dielectric constant film 108a and a polycrystalline silicon film 114 formed on the semiconductor substrate 102 to be juxtaposed to the N-type MOSFET 118. The low concentration-high dielectric constant film 108a and the high concentration-high dielectric constant film 108b are composed of a material containing one or more element (s) selected from a group consisting of Hf and Zr. The concentration of the above-described metallic element contained in the low concentration-high dielectric constant film 108a is lower than that contained in the high concentration-high dielectric constant film 108b.

    摘要翻译： 半导体器件100包括硅衬底102，包括形成在硅衬底102上的高浓度 - 高介电常数膜108b和多晶硅膜114的N型MOSFET 118以及包括低电平的P型MOSFET 120 浓度高介电常数膜108a和形成在半导体衬底102上并与N型MOSFET 118并置的多晶硅膜114。 低浓度 - 高介电常数膜108a和高浓度 - 高介电常数膜108b由含有选自Hf和Zr的一种或多种元素的材料构成。 包含在低浓度 - 高介电常数膜108a中的上述金属元素的浓度低于高浓度 - 高介电常数膜108b中包含的金属元素的浓度。

    Semiconductor device
    7.
    发明申请
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US20060043497A1

    公开(公告)日：2006-03-02

    申请号：US11210873

    申请日：2005-08-25

    申请人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka ,  Toshiyuki Iwamoto

    发明人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka ,  Toshiyuki Iwamoto

    IPC分类号： H01L29/76

    CPC分类号： H01L29/518 ,  H01L21/0214 ,  H01L21/02142 ,  H01L21/2652 ,  H01L21/2658 ,  H01L21/28185 ,  H01L21/28238 ,  H01L21/3115 ,  H01L21/3141 ,  H01L21/31645 ,  H01L21/823807 ,  H01L21/823828 ,  H01L21/823842 ,  H01L29/1033

    摘要： Threshold voltage of a field effect transistor is successfully adjusted with a smaller dose of an impurity, as compared with a conventional adjustment of the threshold voltage only by doping an impurity into the channel region. A semiconductor device 100 has a silicon substrate 101 and a P-type MOSFET 103 comprising a SiON film 113 formed on the silicon substrate 101, and a polycrystalline silicon film 106. Any one of, or two or more of metals selected from the group consisting of Hf, Zr, Al, La, Pr, Y, Ti, Ta and W are allowed to reside at the interface 115 between the polycrystalline silicon film 106 and the SiON film 113, and concentration of the metal(s) at the interface 115 is adjusted to 5×1013 atoms/cm2 or more and less than 1.4×1015 atoms/cm2.

    摘要翻译： 与仅通过将杂质掺杂到沟道区域中的阈值电压的常规调节相比，场效应晶体管的阈值电压被成功地用较小剂量的杂质调节。 半导体器件100具有硅衬底101和包括形成在硅衬底101上的SiON膜113的P型MOSFET 103和多晶硅膜106.选自以下的金属中的任何一种或两种以上选自 的Hf，Zr，Al，La，Pr，Y，Ti，Ta和W被放置在多晶硅膜106和SiON膜113之间的界面115处，并且界面115处的金属的浓度 被调整到5×10 13原子/ cm 2以上且小于1.4×10 15原子/ cm 2以上。

    MOS transistor
    8.
    发明授权
    MOS transistor 失效
    MOS晶体管

    公开(公告)号：US07102183B2

    公开(公告)日：2006-09-05

    申请号：US11001310

    申请日：2004-12-02

    申请人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka

    发明人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka

    IPC分类号： H01L29/78 ,  H01L27/108 ,  H01L21/336

    CPC分类号： H01L29/7838 ,  H01L21/823807

    摘要： In P-channel MOS transistor comprising a gate insulating film composed of a high dielectric constant material and the gate electrode composed of polycrystalline silicon, a technology for preventing Fermi level pinning and providing a stable reduction of the threshold voltage is provided. The MOS transistor functions as a buried channel transistor formed by implanting In as a P-type impurity into the channel region. In addition, the gate electrode is composed of the polycrystalline silicon film, which is doped with N-type impurity. Thus, the gate depletion caused by Fermi level pinning can be effectively inhibited. Therefore the depletion in the gate electrode can be avoided and the threshold voltage can be stably diminished. In this case, the threshold voltage is stably reduced since electric charge is induced by applying a constant voltage to the gate electrode.

    摘要翻译： 在包括由高介电常数材料构成的栅极绝缘膜和由多晶硅构成的栅电极的P沟道MOS晶体管中，提供了用于防止费米能级钉扎并提供阈值电压的稳定降低的技术。 MOS晶体管用作通过将In作为P型杂质注入沟道区而形成的埋入沟道晶体管。 此外，栅电极由掺杂有N型杂质的多晶硅膜构成。 因此，可以有效地抑制由费米能量钉扎引起的栅极耗尽。 因此，能够避免栅电极的耗尽，能够稳定地降低阈值电压。 在这种情况下，由于通过向栅电极施加恒定电压而引起电荷，所以阈值电压稳定地降低。

    MOS transistor
    9.
    发明申请
    MOS transistor 失效
    MOS晶体管

    公开(公告)号：US20050224857A1

    公开(公告)日：2005-10-13

    申请号：US11001310

    申请日：2004-12-02

    申请人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka

    发明人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka

    IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L29/78 ,  H01L31/062

    CPC分类号： H01L29/7838 ,  H01L21/823807

    摘要： In P-channel MOS transistor comprising a gate insulating film composed of a high dielectric constant material and the gate electrode composed of polycrystalline silicon, a technology for preventing Fermi level pinning and providing a stable reduction of the threshold voltage is provided. The MOS transistor functions as a buried channel transistor formed by implanting In as a P-type impurity into the channel region. In addition, the gate electrode is composed of the polycrystalline silicon film, which is doped with N-type impurity. Thus, the gate depletion caused by Fermi level pinning can be effectively inhibited. Therefore the depletion in the gate electrode can be avoided and the threshold voltage can be stably diminished. In this case, the threshold voltage is stably reduced since electric charge is induced by applying a constant voltage to the gate electrode.

    摘要翻译： 在包括由高介电常数材料构成的栅极绝缘膜和由多晶硅构成的栅电极的P沟道MOS晶体管中，提供了用于防止费米能级钉扎并提供阈值电压的稳定降低的技术。 MOS晶体管用作通过将In作为P型杂质注入沟道区而形成的埋入沟道晶体管。 此外，栅电极由掺杂有N型杂质的多晶硅膜构成。 因此，可以有效地抑制由费米能量钉扎引起的栅极耗尽。 因此，能够避免栅电极的耗尽，能够稳定地降低阈值电压。 在这种情况下，由于通过向栅电极施加恒定电压而引起电荷，所以阈值电压稳定地降低。

    Semiconductor device featuring multi-layered electrode structure
    10.
    发明申请
    Semiconductor device featuring multi-layered electrode structure 审中-公开
    具有多层电极结构的半导体器件

    公开(公告)号：US20050189597A1

    公开(公告)日：2005-09-01

    申请号：US11068432

    申请日：2005-03-01

    申请人： Yuri Masuoka ,  Naohiko Kimizuka

    发明人： Yuri Masuoka ,  Naohiko Kimizuka

    IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L23/485 ,  H01L27/088 ,  H01L27/092 ,  H01L27/108 ,  H01L29/40 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

    CPC分类号： H01L21/823842 ,  H01L21/2807 ,  H01L21/823857 ,  H01L29/518 ,  H01L29/6659 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In a semiconductor device including a semiconductor substrate (10; 56), at least one electrode structure (34, 36; 72, 74) is provided on a surface of the semiconductor substrate. The electrode structure is constructed as a multi-layered electrode structure including an insulating layer (34A, 36A; 72A, 74A) formed on the surface of the semiconductor substrate and composed of a dielectric material exhibiting a dielectric constant larger than that of silicon dioxide, a lower electrode layer (34B, 36B; 72B, 74B) formed on the insulating layer and composed of polycrystalline silicon, and an upper electrode layer (34C, 36C; 72D, 74D) formed on the lower electrode layer and composed of polycrystalline silicon. The lower electrode layer features an average grain size of polycrystalline silicon which is larger than that of polycrystalline silicon of the upper electrode layer.

    摘要翻译： 在包括半导体衬底（10; 56）的半导体器件中，在半导体衬底的表面上设置至少一个电极结构（34,36; 72,74）。 电极结构被构造为包括形成在半导体衬底的表面上的绝缘层（34A，36A; 72A，74A）的多层电极结构，该电介质由介电常数大于 形成在绝缘层上并由多晶硅构成的下电极层（34B，36B; 72B，74B）和上电极层（34C，36C; 72D，74D） 形成在下电极层上并由多晶硅构成。 下电极层的特征在于多晶硅的平均粒径大于上电极层的多晶硅的平均粒径。