Plasma processing apparatus
    1.
    发明授权

    公开(公告)号:US10541115B2

    公开(公告)日:2020-01-21

    申请号:US13363427

    申请日:2012-02-01

    IPC分类号: H01J37/32

    摘要: In a plasma processing apparatus that can adjust an induction magnetic field distribution of power feeding sections of an induction coil, correct a plasma distribution on a specimen, and apply uniform plasma processing to the specimen, the specimen is subjected to plasma processing, a dielectric window that forms the upper surface of the vacuum processing chamber, a gas lead-in section that leads gas into the vacuum processing chamber, a specimen table that is arranged in the vacuum processing chamber and on which the specimen is placed, an induction coil provided above the dielectric window, and a radio-frequency power supply that supplies radio-frequency power to the induction coil. The plasma processing apparatus includes a flat conductor arranged below the induction coil. The induction coil includes crossing power feeding sections. The conductor is arranged below the power feeding sections.

    Plasma processing apparatus
    2.
    发明授权
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号:US08940128B2

    公开(公告)日:2015-01-27

    申请号:US12853427

    申请日:2010-08-10

    摘要: The invention aims at suppressing the self bias generated at the surface of the inner wall of the vacuum processing chamber, to thereby suppress the chipping of the inner wall surface of the vacuum processing chamber or the consumption of the inner parts of the vacuum processing chamber. The present invention provides a plasma processing apparatus comprising a vacuum processing chamber, a vacuum processing chamber lid sealing an upper portion of the vacuum processing chamber, an induction antenna, a Faraday shield disposed between the induction antenna and the vacuum processing chamber lid, and a high frequency power supply for supplying high frequency power to the induction antenna, wherein the induction antenna is divided into two or more parts, the Faraday shield is divided into a division number corresponding to the division number of the induction antenna, and high frequency voltages are applied thereto via a matching box from the one high frequency power supply.

    摘要翻译: 本发明旨在抑制在真空处理室的内壁表面产生的自偏压,从而抑制真空处理室的内壁表面的碎裂或真空处理室的内部部分的消耗。 本发明提供一种等离子体处理装置,其包括真空处理室,密封真空处理室的上部的真空处理室盖,感应天线,设置在感应天线和真空处理室盖之间的法拉第屏蔽,以及 用于向感应天线提供高频电力的高频电源,其中感应天线被分成两部分或更多部分,法拉第屏蔽被分成对应于感应天线的分割数的分频数,高频电压是 通过匹配盒从一个高频电源施加到其上。

    PLASMA PROCESSING APPARATUS
    3.
    发明申请
    PLASMA PROCESSING APPARATUS 有权
    等离子体加工设备

    公开(公告)号:US20110297320A1

    公开(公告)日:2011-12-08

    申请号:US12853427

    申请日:2010-08-10

    IPC分类号: H01L21/3065

    摘要: The invention aims at suppressing the self bias generated at the surface of the inner wall of the vacuum processing chamber, to thereby suppress the chipping of the inner wall surface of the vacuum processing chamber or the consumption of the inner parts of the vacuum processing chamber. The present invention provides a plasma processing apparatus comprising a vacuum processing chamber, a vacuum processing chamber lid sealing an upper portion of the vacuum processing chamber, an induction antenna, a Faraday shield disposed between the induction antenna and the vacuum processing chamber lid, and a high frequency power supply for supplying high frequency power to the induction antenna, wherein the induction antenna is divided into two or more parts, the Faraday shield is divided into a division number corresponding to the division number of the induction antenna, and high frequency voltages are applied thereto via a matching box from the one high frequency power supply.

    摘要翻译: 本发明旨在抑制在真空处理室的内壁表面产生的自偏压,从而抑制真空处理室的内壁表面的碎裂或真空处理室的内部部分的消耗。 本发明提供一种等离子体处理装置,其包括真空处理室,密封真空处理室的上部的真空处理室盖,感应天线,设置在感应天线和真空处理室盖之间的法拉第屏蔽,以及 用于向感应天线提供高频电力的高频电源,其中感应天线被分成两部分或更多部分,法拉第屏蔽被分成对应于感应天线的分割数的分频数,高频电压是 通过匹配盒从一个高频电源施加到其上。