公开(公告)号：US20110058585A1

公开(公告)日：2011-03-10

申请号：US12846361

申请日：2010-07-29

申请人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Shinji TOKUYAMA ,  Koji KATAYAMA ,  Takao NAKAMURA ,  Takatoshi IKEGAMI

发明人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Shinji TOKUYAMA ,  Koji KATAYAMA ,  Takao NAKAMURA ,  Takatoshi IKEGAMI

IPC分类号： H01S5/323 ,  H01L33/30

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01S5/0014 ,  H01S5/0021 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211

摘要： A group-III nitride semiconductor laser device comprises a laser structure including a support base and a semiconductor region, and an electrode provided on the semiconductor region of the laser structure. The support base comprises a hexagonal group-III nitride semiconductor and has a semipolar primary surface, and the semiconductor region is provided on the semipolar primary surface of the support base. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer. The first cladding layer, the second cladding layer, and the active layer are arranged along a normal axis to the semipolar primary surface. The active layer comprises a gallium nitride-based semiconductor layer. The c-axis of the hexagonal group-III nitride semiconductor of the support base tilts at a finite angle ALPHA with respect to a normal axis toward an a-axis of the hexagonal group-III nitride semiconductor. The laser structure includes first and second fractured faces intersecting with an a-n plane defined by the normal axis and the a-axis of the hexagonal group-III nitride semiconductor. The laser cavity of the group-III nitride semiconductor laser device includes the first and second fractured faces. The laser structure includes first and second surfaces and the first surface is opposite to the second surface, and each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface.

摘要翻译： III族氮化物半导体激光器件包括具有支撑基极和半导体区域的激光器结构以及设置在激光器结构的半导体区域上的电极。 支撑基底包括六方晶III族氮化物半导体，并且具有半极性主表面，并且半导体区域设置在支撑基底的半极性主表面上。 半导体区域包括第一导电型氮化镓基半导体的第一包层，第二导电型氮化镓基半导体的第二包覆层和有源层。 第一包层，第二包覆层和有源层沿着正交轴线配置到半极性主表面。 有源层包括氮化镓基半导体层。 支撑基座的六角形III族氮化物半导体的c轴相对于六边形III族氮化物半导体的a轴的法线轴线以有限角度ALPHA倾斜。 激光结构包括与由六角形III族氮化物半导体的法线轴和a轴限定的a-n平面相交的第一和第二断裂面。 III族氮化物半导体激光器件的激光腔包括第一和第二断裂面。 激光结构包括第一表面和第二表面，并且第一表面与第二表面相对，并且第一和第二断裂面中的每一个从第一表面的边缘延伸到第二表面的边缘。

公开(公告)号：US20120088326A1

公开(公告)日：2012-04-12

申请号：US13277806

申请日：2011-10-20

申请人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Shinji TOKUYAMA ,  Koji KATAYAMA ,  Takao NAKAMURA ,  Takatoshi IKEGAMI

发明人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Shinji TOKUYAMA ,  Koji KATAYAMA ,  Takao NAKAMURA ,  Takatoshi IKEGAMI

IPC分类号： H01L33/02

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01S5/0014 ,  H01S5/0021 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211

摘要： A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.

摘要翻译： 制备III族氮化物半导体激光器件的方法包括：制备六方晶III族氮化物半导体的衬底，其中衬底具有半极性主表面; 形成具有激光结构的基板产品，阳极电极和阴极电极，其中所述激光器结构包括所述基板和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在六方晶III族氮化物半导体的a轴的方向上划分基板产品的第一表面; 并且通过压靠衬底产品的第二表面进行衬底产品的分解，以形成另一衬底产品和激光棒。

公开(公告)号：US20100322276A1

公开(公告)日：2010-12-23

申请号：US12844446

申请日：2010-07-27

申请人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Shinji TOKUYAMA ,  Koji KATAYAMA ,  Takao NAKAMURA ,  Takatoshi IKEGAMI

发明人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Shinji TOKUYAMA ,  Koji KATAYAMA ,  Takao NAKAMURA ,  Takatoshi IKEGAMI

IPC分类号： H01S5/30 ,  H01L33/00 ,  H01L21/02 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/3202 ,  H01S2301/14

摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.

摘要翻译： 提供了在六边形III族氮化物的c轴朝向m轴倾斜的支撑基座的半极性表面上具有允许低阈值电流的激光腔的III族氮化物半导体激光器件。 第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。 因此，通过能够实现低阈值电流的带状转变来利用发射是可行的。 在激光结构13中，第一表面13a与第二表面13b相对。 第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。 断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

公开(公告)号：US20110164637A1

公开(公告)日：2011-07-07

申请号：US13050330

申请日：2011-03-17

申请人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Shinji TOKUYAMA ,  Koji KATAYAMA ,  Takao NAKAMURA ,  Takatoshi IKEGAMI

发明人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Shinji TOKUYAMA ,  Koji KATAYAMA ,  Takao NAKAMURA ,  Takatoshi IKEGAMI

IPC分类号： H01S5/323

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/3202 ,  H01S2301/14

摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.

摘要翻译： 提供了在六边形III族氮化物的c轴朝向m轴倾斜的支撑基座的半极性表面上具有允许低阈值电流的激光腔的III族氮化物半导体激光器件。 第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。 因此，通过能够实现低阈值电流的带状转变来利用发射是可行的。 在激光结构13中，第一表面13a与第二表面13b相对。 第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。 断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

公开(公告)号：US20120128016A1

公开(公告)日：2012-05-24

申请号：US13328622

申请日：2011-12-16

申请人： Masahiro ADACHI ,  Shinji TOKUYAMA ,  Yohei ENYA ,  Takashi KYONO ,  Yusuke YOSHIZUMI ,  Katsushi AKITA ,  Masaki UENO ,  Koji KATAYAMA ,  Takatoshi IKEGAMI ,  Takao NAKAMURA

发明人： Masahiro ADACHI ,  Shinji TOKUYAMA ,  Yohei ENYA ,  Takashi KYONO ,  Yusuke YOSHIZUMI ,  Katsushi AKITA ,  Masaki UENO ,  Koji KATAYAMA ,  Takatoshi IKEGAMI ,  Takao NAKAMURA

IPC分类号： H01S5/32

CPC分类号： H01S5/2004 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/309 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/18 ,  H01S2302/00

摘要： Provided is a III-nitride semiconductor laser diode which is capable of lasing at a low threshold. A support base has a semipolar or nonpolar primary surface. The c-axis Cx of a III-nitride is inclined relative to the primary surface. An n-type cladding region and a p-type cladding region are provided above the primary surface of the support base. A core semiconductor region is provided between the n-type cladding region and the p-type cladding region. The core semiconductor region includes a first optical guide layer, an active layer, and a second optical guide layer. The active layer is provided between the first optical guide layer and the second optical guide layer. The thickness of the core semiconductor region is not less than 0.5 μm. This structure allows the confinement of light into the core semiconductor region without leakage of light into the support base, and therefore enables reduction in threshold current.

摘要翻译： 提供能够以低阈值激光的III族氮化物半导体激光二极管。 支撑底座具有半极性或非极性主表面。 III族氮化物的c轴Cx相对于主表面倾斜。 在支撑基体的主表面上方设置有n型包层区域和p型包层区域。 芯型半导体区域设置在n型包层区域和p型包层区域之间。 芯半导体区域包括第一光导层，有源层和第二光导层。 有源层设置在第一光导层和第二光导层之间。 芯半导体区域的厚度不小于0.5μm。 这种结构允许将光限制在芯半导体区域中，而不会将光泄漏到支撑基底中，因此能够降低阈值电流。

公开(公告)号：US20110013656A1

公开(公告)日：2011-01-20

申请号：US12836065

申请日：2010-07-14

申请人： Katsushi AKITA ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Shinji TOKUYAMA ,  Yusuke YOSHIZUMI ,  Takamichi SUMITOMO ,  Masaki UENO

发明人： Katsushi AKITA ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Shinji TOKUYAMA ,  Yusuke YOSHIZUMI ,  Takamichi SUMITOMO ,  Masaki UENO

IPC分类号： H01S5/20 ,  H01S5/323

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/3202

摘要： A group III nitride substrate has a semi-polar primary surface. A first cladding layer has a first conductivity type, and comprises aluminum-containing group III nitride. The first cladding layer is provided on the substrate. An active layer is provided on the first cladding layer. A second cladding layer has a second conductivity type, and comprises aluminum-containing group III nitride. The second cladding layer is provided on the active layer. An optical guiding layer is provided between the first cladding layer and the active layer and/or between the second cladding layer and the active layer. The optical guiding layer comprises a first layer comprising Inx1Ga1-x1N (0≦x1

摘要翻译： III族氮化物衬底具有半极性主表面。 第一包层具有第一导电类型，并且包括含铝的III族氮化物。 第一包层设置在基板上。 在第一包层上设置有源层。 第二包层具有第二导电类型，并且包括含铝的III族氮化物。 第二包覆层设置在有源层上。 在第一包层和有源层之间和/或第二包层和有源层之间设置光导层。 光引导层包括包含In x Ga 1-x N（0＆amp; n 1; x1 <1）的第一层和包含In x Ga 1-x 2 N（x 1

公开(公告)号：US20110076788A1

公开(公告)日：2011-03-31

申请号：US12837248

申请日：2010-07-15

申请人： Takashi KYONO ,  Yohei ENYA ,  Yusuke YOSHIZUMI ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Masahiro ADACHI ,  Shinji TOKUYAMA

发明人： Takashi KYONO ,  Yohei ENYA ,  Yusuke YOSHIZUMI ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Masahiro ADACHI ,  Shinji TOKUYAMA

IPC分类号： H01L21/66

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/0014 ,  H01S5/34333

摘要： A method of making a semiconductor light-emitting device involves the steps of selecting at least one tilt angle for a primary surface of a substrate to evaluate the direction of piezoelectric polarization in a light-emitting layer, the substrate comprising a group III nitride semiconductor; preparing a substrate having the primary surface, the primary surface having the selected tilt angle, and the primary surface comprising the group III nitride semiconductor; forming a quantum well structure and p- and n-type gallium nitride semiconductor layers for the light-emitting layer at the selected tilt angle to prepare a substrate product; measuring photoluminescence of the substrate product while applying a bias to the substrate product, to determine bias dependence of the photoluminescence; evaluating the direction of the piezoelectric polarization in the light-emitting layer at the selected tilt angle on the primary surface of the substrate by the determined bias dependence; determining which of the primary surface or the back surface of the substrate is to be used, based on the evaluation to select a plane orientation of a growth substrate for making the semiconductor light-emitting device; and forming a semiconductor laminate for the semiconductor light-emitting device on the primary surface of the growth substrate. The tilt angle is defined by the primary surface of the substrate and the (0001) plane of the group III nitride semiconductor. Each of the well layer and the barrier layer of the light-emitting layer extends along a reference plane tilting from a plane perpendicular to a reference axis extending along the c-axis of the group III nitride semiconductor.

摘要翻译： 制造半导体发光器件的方法包括以下步骤：为衬底的主表面选择至少一个倾斜角以评估发光层中的压电极化的方向，所述衬底包括III族氮化物半导体; 制备具有主表面的基底，所述主表面具有所选择的倾斜角，并且所述主表面包含III族氮化物半导体; 以选定的倾斜角形成量子阱结构和用于发光层的p型和n型氮化镓半导体层以制备衬底产品; 测量衬底产物的光致发光，同时向衬底产物施加偏压，以确定光致发光的偏差依赖性; 以所确定的偏置依赖性，以所选择的倾斜角在所述基板的主表面上评估所述发光层中的所述压电极化的方向; 基于选择用于制造半导体发光器件的生长衬底的平面取向的评估，确定要使用衬底的主表面或背表面中的哪一个; 以及在所述生长衬底的主表面上形成用于所述半导体发光器件的半导体层压体。 倾斜角由衬底的主表面和III族氮化物半导体的（0001）面限定。 发光层的阱层和阻挡层中的每一个沿着从垂直于沿着III族氮化物半导体的c轴延伸的参考轴的平面倾斜的参考平面延伸。

公开(公告)号：US20120114002A1

公开(公告)日：2012-05-10

申请号：US13294378

申请日：2011-11-11

申请人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Takashi KYONO ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

发明人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Takashi KYONO ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

IPC分类号： H01S5/32 ,  H01L33/02

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01S5/2009 ,  H01S5/34333

摘要： Provided is a Group III nitride semiconductor laser diode with a cladding layer capable of providing high optical confinement and carrier confinement. An n-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on a (20-21)-plane GaN substrate. A GaN optical guiding layer is grown so as to be lattice-relaxed on the n-type cladding layer. An active layer, a GaN optical guiding layer, an Al0.12Ga0.88N electron blocking layer, and a GaN optical guiding layer are grown so as not to be lattice-relaxed on the optical guiding layer. A p-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on the optical guiding layer. A p-type GaN contact layer is grown so as not to be lattice-relaxed on the p-type cladding layer, to produce a semiconductor laser. Dislocation densities at junctions are larger than those at the other junctions.

摘要翻译： 提供了具有能够提供高的光学限制和载流子限制的包层的III族氮化物半导体激光二极管。 生长n型Al0.08Ga0.92N包覆层，使其在（20-21）面GaN衬底上晶格弛豫。 在n型包覆层上生长GaN光引导层以使其晶格弛豫。 生长活性层，GaN光引导层，Al0.12Ga0.88N电子阻挡层和GaN光引导层，使得在导光层上不会格子弛豫。 生长p型Al0.08Ga0.92N覆层，使其在光导层上格子弛豫。 生长p型GaN接触层，以便在p型覆层上不会发生晶格弛豫，以产生半导体激光器。 交界处的位错密度大于其他路口的位错密度。

公开(公告)号：US20110180805A1

公开(公告)日：2011-07-28

申请号：US12836144

申请日：2010-07-14

申请人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Katsushi AKITA ,  Masaki UENO ,  Takao NAKAMURA

发明人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Katsushi AKITA ,  Masaki UENO ,  Takao NAKAMURA

IPC分类号： H01L33/32

CPC分类号： H01L21/02458 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2302/00

摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle ALPHA with respect to the c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes a plurality of GaN-based semiconductor layers. The reference axis is inclined at a first angle ALPHA1 in the range of not less than 10 degrees, and less than 80 degrees from the c-axis of the III-nitride semiconductor toward a first crystal axis, either one of the m-axis and a-axis. The reference axis is inclined at a second angle ALPHA2 in the range of not less than −0.30 degrees and not more than +0.30 degrees from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. The predetermined angle, the first angle, and the second angle have a relation of ALPHA=(ALPHA12+ALPHA22)1/2. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.

摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，具有主要表面沿垂直于相对于III型氮化物半导体的c轴倾斜预定角度ALPHA的参考轴线的第一参考平面延伸， 氮化物半导体，以及设置在支撑基体的主表面上的外延半导体区域。 外延半导体区域包括多个GaN基半导体层。 基准轴在距离III族氮化物半导体的c轴朝向第一晶轴不小于10度且小于80度的范围内以第一角度ALPHA1倾斜，m轴和 a轴。 参考轴在距离III族氮化物半导体的c轴朝向第二晶轴不小于-0.30度且不大于+0.30度的范围内以第二角度ALPHA2倾斜，另一个m- 轴和a轴。 预定角度，第一角度和第二角度具有ALPHA =（ALPHA12 + ALPHA22）1/2的关系。 外延半导体区域的最外表面的形态包括多个凹坑。 坑的坑密度不大于5×104cm-2。

公开(公告)号：US20110057167A1

公开(公告)日：2011-03-10

申请号：US12947431

申请日：2010-11-16

申请人： Masaki UENO ,  Yohei ENYA ,  Takashi KYONO ,  Katsushi AKITA ,  Yusuke YOSHIZUMI ,  Takamichi SUMITOMO ,  Takao NAKAMURA

发明人： Masaki UENO ,  Yohei ENYA ,  Takashi KYONO ,  Katsushi AKITA ,  Yusuke YOSHIZUMI ,  Takamichi SUMITOMO ,  Takao NAKAMURA

IPC分类号： H01L33/04 ,  H01L33/26 ,  H01L33/32

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L33/18 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3407 ,  H01S2301/173 ,  H01S2304/04

摘要： In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The tilt angle α is in the range of greater than 59 degrees to less than 80 degrees or greater than 150 degrees to less than 180 degrees. A gallium nitride based semiconductor layer P is adjacent to a light-emitting layer SP− with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer W3 is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer P is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer SP− and the gallium nitride based semiconductor layer P.

摘要翻译： 在基于氮化物的半导体光学器件LE1中，应变阱层21沿着从与c轴方向延伸的参考轴正交的平面以倾斜角α倾斜的参考平面SR1延伸。 倾斜角α在大于59度至小于80度或大于150度至小于180度的范围内。 氮化镓基半导体层P与具有负的压电场的发光层SP相邻，并且具有比阻挡层的带隙大的带隙。 阱层W3中的压电场的方向指向从n型层到p型层的方向，并且氮化镓基半导体层P中的压电场指向从p型层的方向， 类型层到n型层。 因此，价带，而不是导带，在发光层SP-和氮化镓基半导体层P之间的界面处有下沉。