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    III-INTRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING THE III-NITRIDE SEMICONDUCTOR LASER DEVICE
    8.
    发明申请
    III-INTRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING THE III-NITRIDE SEMICONDUCTOR LASER DEVICE 审中-公开
    III-INTRIDE SEMICONDUCTOR LASER DEVICE，以及​​制造III-NITRIDE SEMICONDUCTOR LASER DEVICE的方法

    公开(公告)号：US20110075695A1

    公开(公告)日：2011-03-31

    申请号：US12831557

    申请日：2010-07-07

    申请人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Shinji TOKUYAMA ,  Takamichi SUMITOMO ,  Masaki UENO ,  Takatoshi IKEGAMI ,  Koji KATAYAMA ,  Takao NAKAMURA

    发明人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Shinji TOKUYAMA ,  Takamichi SUMITOMO ,  Masaki UENO ,  Takatoshi IKEGAMI ,  Koji KATAYAMA ,  Takao NAKAMURA

    IPC分类号： H01S5/323 ,  H01L33/00 ,  H01S5/30

    CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0287 ,  H01S5/1085 ,  H01S5/16 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/3213 ,  H01S5/34333 ,  H01S2301/14

    摘要： In a III-nitride semiconductor laser device, a laser structure includes a support base with a semipolar primary surface comprised of a III-nitride semiconductor, and a semiconductor region provided on the semipolar primary surface of the support base. First and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device are provided on first and second end faces of the semiconductor region, respectively. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer. The first cladding layer, the second cladding layer, and the active layer are arranged in an axis normal to the semipolar primary surface. A c+ axis vector indicating a direction of the axis of the III-nitride semiconductor of the support base is inclined at an angle in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees toward a direction of any one crystal axis of the m- and a-axes of the III-nitride semiconductor with respect to a normal vector indicating a direction of the normal axis. The first and second end faces intersect with a reference plane defined by the normal axis and the one crystal axis of the hexagonal III-nitride semiconductor. The c+ axis vector makes an acute angle with a waveguide vector indicating a direction from the second end face to the first end face. A thickness of the first dielectric multilayer film is smaller than a thickness of the second dielectric multilayer film.

    摘要翻译： 在III族氮化物半导体激光器件中，激光器结构包括具有由III族氮化物半导体构成的半极性主表面的支撑基底和设置在支撑基底的半极性主表面上的半导体区域。 分别在半导体区域的第一和第二端面上设置用于氮化物半导体激光器件的光腔的第一和第二电介质多层膜。 半导体区域包括第一导电型氮化镓基半导体的第一包层，第二导电型氮化镓基半导体的第二包层和设置在第一包层和第二包层之间的有源层。 第一覆层，第二覆层，有源层配置在与半极性主面垂直的轴上。 指示支撑基座的III族氮化物半导体的<0001轴的方向的c +轴矢量以不小于45度且不大于80度的范围内的角度倾斜，或者在不小于 相对于表示法线轴方向的法线矢量，朝向III族氮化物半导体的m轴和a轴的任意一个晶轴的方向为100度以上且135度以下。 第一和第二端面与由正常轴和六边形III族氮化物半导体的一个晶体轴限定的参考平面相交。 c +轴矢量与表示从第二端面到第一端面的方向的波导矢量成锐角。 第一电介质多层膜的厚度小于第二电介质多层膜的厚度。

    III-Nitride semiconductor laser device, and method of fabricating the III-Nitride semiconductor laser device
    9.
    发明申请
    III-Nitride semiconductor laser device, and method of fabricating the III-Nitride semiconductor laser device 审中-公开
    III型氮化物半导体激光器件及其制造方法

    公开(公告)号：US20110075694A1

    公开(公告)日：2011-03-31

    申请号：US12831566

    申请日：2010-07-07

    申请人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Shinji TOKUYAMA ,  Takamichi SUMITOMO ,  Masaki UENO ,  Takatoshi IKEGAMI ,  Koji KATAYAMA ,  Takao NAKAMURA

    发明人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Shinji TOKUYAMA ,  Takamichi SUMITOMO ,  Masaki UENO ,  Takatoshi IKEGAMI ,  Koji KATAYAMA ,  Takao NAKAMURA

    IPC分类号： H01S5/323 ,  H01L21/78

    CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/34333

    摘要： In a III-nitride semiconductor laser device, a laser structure includes a support base with a semipolar primary surface comprised of a III-nitride semiconductor, and a semiconductor region provided on the semipolar primary surface of the support base. First and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device are provided on first and second end faces of the semiconductor region, respectively. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer. The first cladding layer, the second cladding layer, and the active layer are arranged in an axis normal to the semipolar primary surface. A c+ axis vector indicating a direction of the axis of the III-nitride semiconductor of the support base is inclined at an angle in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees toward a direction of any one crystal axis of the m- and a-axes of the III-nitride semiconductor with respect to a normal vector indicating a direction of the normal axis. The first and second end faces intersect with a reference plane defined by the normal axis and the one crystal axis of the hexagonal III-nitride semiconductor. The c+ axis vector makes an acute angle with a waveguide vector indicating a direction from the second end face to the first end face. A thickness of the second dielectric multilayer film is smaller than a thickness of the first dielectric multilayer film.

    摘要翻译： 在III族氮化物半导体激光器件中，激光器结构包括具有由III族氮化物半导体构成的半极性主表面的支撑基底和设置在支撑基底的半极性主表面上的半导体区域。 分别在半导体区域的第一和第二端面上设置用于氮化物半导体激光器件的光腔的第一和第二电介质多层膜。 半导体区域包括第一导电型氮化镓基半导体的第一包层，第二导电型氮化镓基半导体的第二包层和设置在第一包层和第二包层之间的有源层。 第一覆层，第二覆层，有源层配置在与半极性主面垂直的轴上。 指示支撑基座的III族氮化物半导体的<0001轴的方向的c +轴矢量以不小于45度且不大于80度的范围内的角度倾斜，或者在不小于 相对于表示法线轴方向的法线矢量，朝向III族氮化物半导体的m轴和a轴的任意一个晶轴的方向为100度以上且135度以下。 第一和第二端面与由正常轴和六边形III族氮化物半导体的一个晶体轴限定的参考平面相交。 c +轴矢量与表示从第二端面到第一端面的方向的波导矢量成锐角。 第二电介质多层膜的厚度小于第一电介质多层膜的厚度。