GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE
    3.
    发明申请
    GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 有权
    III族氮化物半导体激光器件,以及制备III族氮化物半导体激光器件的方法

    公开(公告)号:US20110058585A1

    公开(公告)日:2011-03-10

    申请号:US12846361

    申请日:2010-07-29

    IPC分类号: H01S5/323 H01L33/30

    摘要: A group-III nitride semiconductor laser device comprises a laser structure including a support base and a semiconductor region, and an electrode provided on the semiconductor region of the laser structure. The support base comprises a hexagonal group-III nitride semiconductor and has a semipolar primary surface, and the semiconductor region is provided on the semipolar primary surface of the support base. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer. The first cladding layer, the second cladding layer, and the active layer are arranged along a normal axis to the semipolar primary surface. The active layer comprises a gallium nitride-based semiconductor layer. The c-axis of the hexagonal group-III nitride semiconductor of the support base tilts at a finite angle ALPHA with respect to a normal axis toward an a-axis of the hexagonal group-III nitride semiconductor. The laser structure includes first and second fractured faces intersecting with an a-n plane defined by the normal axis and the a-axis of the hexagonal group-III nitride semiconductor. The laser cavity of the group-III nitride semiconductor laser device includes the first and second fractured faces. The laser structure includes first and second surfaces and the first surface is opposite to the second surface, and each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface.

    摘要翻译: III族氮化物半导体激光器件包括具有支撑基极和半导体区域的激光器结构以及设置在激光器结构的半导体区域上的电极。 支撑基底包括六方晶III族氮化物半导体,并且具有半极性主表面,并且半导体区域设置在支撑基底的半极性主表面上。 半导体区域包括第一导电型氮化镓基半导体的第一包层,第二导电型氮化镓基半导体的第二包覆层和有源层。 第一包层,第二包覆层和有源层沿着正交轴线配置到半极性主表面。 有源层包括氮化镓基半导体层。 支撑基座的六角形III族氮化物半导体的c轴相对于六边形III族氮化物半导体的a轴的法线轴线以有限角度ALPHA倾斜。 激光结构包括与由六角形III族氮化物半导体的法线轴和a轴限定的a-n平面相交的第一和第二断裂面。 III族氮化物半导体激光器件的激光腔包括第一和第二断裂面。 激光结构包括第一表面和第二表面,并且第一表面与第二表面相对,并且第一和第二断裂面中的每一个从第一表面的边缘延伸到第二表面的边缘。

    III-INTRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING THE III-NITRIDE SEMICONDUCTOR LASER DEVICE
    10.
    发明申请
    III-INTRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING THE III-NITRIDE SEMICONDUCTOR LASER DEVICE 审中-公开
    III-INTRIDE SEMICONDUCTOR LASER DEVICE,以及​​制造III-NITRIDE SEMICONDUCTOR LASER DEVICE的方法

    公开(公告)号:US20110075695A1

    公开(公告)日:2011-03-31

    申请号:US12831557

    申请日:2010-07-07

    IPC分类号: H01S5/323 H01L33/00 H01S5/30

    摘要: In a III-nitride semiconductor laser device, a laser structure includes a support base with a semipolar primary surface comprised of a III-nitride semiconductor, and a semiconductor region provided on the semipolar primary surface of the support base. First and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device are provided on first and second end faces of the semiconductor region, respectively. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer. The first cladding layer, the second cladding layer, and the active layer are arranged in an axis normal to the semipolar primary surface. A c+ axis vector indicating a direction of the axis of the III-nitride semiconductor of the support base is inclined at an angle in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees toward a direction of any one crystal axis of the m- and a-axes of the III-nitride semiconductor with respect to a normal vector indicating a direction of the normal axis. The first and second end faces intersect with a reference plane defined by the normal axis and the one crystal axis of the hexagonal III-nitride semiconductor. The c+ axis vector makes an acute angle with a waveguide vector indicating a direction from the second end face to the first end face. A thickness of the first dielectric multilayer film is smaller than a thickness of the second dielectric multilayer film.

    摘要翻译: 在III族氮化物半导体激光器件中,激光器结构包括具有由III族氮化物半导体构成的半极性主表面的支撑基底和设置在支撑基底的半极性主表面上的半导体区域。 分别在半导体区域的第一和第二端面上设置用于氮化物半导体激光器件的光腔的第一和第二电介质多层膜。 半导体区域包括第一导电型氮化镓基半导体的第一包层,第二导电型氮化镓基半导体的第二包层和设置在第一包层和第二包层之间的有源层。 第一覆层,第二覆层,有源层配置在与半极性主面垂直的轴上。 指示支撑基座的III族氮化物半导体的<0001轴的方向的c +轴矢量以不小于45度且不大于80度的范围内的角度倾斜,或者在不小于 相对于表示法线轴方向的法线矢量,朝向III族氮化物半导体的m轴和a轴的任意一个晶轴的方向为100度以上且135度以下。 第一和第二端面与由正常轴和六边形III族氮化物半导体的一个晶体轴限定的参考平面相交。 c +轴矢量与表示从第二端面到第一端面的方向的波导矢量成锐角。 第一电介质多层膜的厚度小于第二电介质多层膜的厚度。