摘要:
Endo-N-(8-methyl-8-azabicyclo[3.2.1]oct-3-yl)-1 -isopropyl-2(1H)-quinolone-3-carboxamide shown by formula (I): ##STR1## or an acid addition salt thereof exhibits a potent action for stimulating a serotonin 4 receptor and is effective for the treatment of diseases and for the improvement of conditions, caused by a reduced motility in the gastrointestinal tract.
摘要:
Endo-(8-methyl-8-azabicyclo�3.2.1!oct-3-yl) 1-isopropyl-2(1H)-quinolone-3-carboxylate represented by Formula (I): ##STR1## or an acid addition salt thereof acts on a serotonin 4 receptor thereby to have a serotonin-like receptor stimulating activity, therefore has an action on activating gastrointestinal motor functions and thus is effective for the improvement of gastrointestinal conditions such as heartburn, anorexia, bowel pain or abdominal distension accompanied by chronic gastritis or postoperative gastroparesis, and further for the treatment of gastro-esophagal reflux, intestinal pseudo-obstruction or constipation.
摘要:
A metal laminated substrate for an oxide superconducting wire is produced by removing, in a state where a copper foil to which rolling is applied at a draft of 90% or more is held at a temperature below a recrystallization temperature, an absorbed material on a surface of the copper foil by applying sputter etching to the surface of the copper foil; removing an absorbed material on a surface of a nonmagnetic metal sheet by applying sputter etching to the surface of the nonmagnetic metal sheet; bonding the copper foil and the metal sheet to each other by reduction rolls at an applied pressure of 300 MPa to 1500 MPa; orienting crystals of the copper by heating a laminated body obtained by bonding at a crystal orientation temperature of copper or above; and forming a protective layer on a copper-side surface of the laminated body by coating.
摘要:
A semiconductor pressure sensing apparatus includes a metallic stem having a diaphragm and a semiconductor sensor bonded to the diaphragm. The semiconductor sensor includes a gauge section and first and second bonding pads. The gauge section is configured to be deformed according to a deformation of the diaphragm. The first and second bonding pads are respectively connected to different positions of the gauge section so that an electrical resistance between the first and second bonding pads can change with a change in the deformation of the diaphragm. The gauge section is formed to a semiconductor layer of an silicon-on-insulator substrate. The semiconductor sensor is directly bonded to the diaphragm by activating contact surfaces between the semiconductor sensor and the diaphragm.
摘要:
A method for manufacturing a semiconductor device having on a silicon substrate semiconductor elements and aluminum (Al) alloy wiring leads as electrically connected thereto is disclosed. The method includes the steps of forming on the silicon substrate an Al alloy layer containing therein copper (Cu), and forming on the Al alloy layer a titanium nitride (TiN) film with enhanced chemical reactivity by using sputtering techniques while applying thereto a DC power of 5.5 W/cm2 or less. Fabrication of such reactivity-rich TiN film on the Al alloy layer results in a reaction layer of Al and Ti being subdivided into several spaced-apart segments. In this case, the reaction layer hardly serves as any diffusion path; thus, it becomes possible to prevent Cu as contained in the Al alloy layer from attempting to outdiffuse with the reaction layer being as its diffusion path. This makes it possible to suppress or minimize unwanted fabrication of AlN on or above the surface of an Al containing lead pattern, thereby enabling increase in electromigration (EM) lifetime of electrical interconnect leads used.
摘要翻译:公开了一种制造半导体器件的方法,该半导体器件具有硅衬底半导体元件和与其电连接的铝(Al)合金布线引线。 该方法包括以下步骤:在硅衬底上形成含有铜(Cu)的Al合金层,并且通过使用溅射技术在Al合金层上形成具有增强的化学反应性的氮化钛(TiN)膜,同时施加直流电力 为5.5W / cm 2以下。 在Al合金层上制备这种富含反应性的TiN膜导致Al和Ti的反应层被细分成几个间隔开的段。 在这种情况下,反应层几乎不作为任何扩散路径; 因此,可以防止Al合金层中所含的Cu作为其扩散路径而反向扩散。 这使得可以抑制或最小化在含铝的引线图案的表面上或上方的AlN的不希望的制造,从而能够增加使用的电互连引线的电迁移(EM)寿命。
摘要:
The object of the present invention is to provide a closed battery capable of rapidly releasing the internal pressure thereof and at the same time disconnecting the current to effectively prevent itself from temperature rising and exploding so that in such a completely closed battery it may assure the safety and reliability thereof, when the internal pressure is elevated due to short circuit, overcharge, reverse charge, or the like. A valve element 5 is provided with a slit 3 between the circumference thereof and a metal substrate 1. When the internal pressure of a battery is elevated, the valve element 5 is smoothly raised up together with a metal foil 2 from a bending fulcrum portion 4 to thereby cut a lead wire 6 or permit a braze portion 8 to detach from the lead wire 6, thus disconnecting the current reliably. Then, the metal foil which usually closes the slit formed around the circumference of the valve element 5 is allowed to burst stably and accurately at a prescribed pressure to thereby form a valve opening portion 7 so that the internal gas of the battery can be discharged.
摘要:
A metal laminated substrate for an oxide superconducting wire is produced by removing, in a state where a copper foil to which rolling is applied at a draft of 90% or more is held at a temperature below a recrystallization temperature, an absorbed material on a surface of the copper foil by applying sputter etching to the surface of the copper foil; removing an absorbed material on a surface of a nonmagnetic metal sheet by applying sputter etching to the surface of the nonmagnetic metal sheet; bonding the copper foil and the metal sheet to each other by reduction rolls at an applied pressure of 300 MPa to 1500 MPa; orienting crystals of the copper by heating a laminated body obtained by bonding at a crystal orientation temperature of copper or above; and forming a protective layer on a copper-side surface of the laminated body by coating.
摘要:
A physical sensor includes: a substrate having a silicon layer, an oxide film and a support layer; and a sensor portion having movable and fixed electrodes and a lower electrode. The movable electrode is supported by a beam on the support layer. The fixed electrode faces the movable electrode. The lower electrode is disposed on the support layer and faces the movable electrode. The physical sensor detects horizontal physical quantity based on a capacitance between the movable and fixed electrodes, and vertical physical quantity based on a capacitance between the movable and lower electrodes. The beam includes vertical and horizontal beams. The thickness of the vertical beam is smaller than the thickness of the horizontal beam.
摘要:
A closed battery which is capable of rapidly releasing the internal pressure there while simultaneously disconnecting the current to prevent the internal temperature of the battery from rising and causing the battery to explode. Thus, when the internal pressure of the closed battery is elevated due to a short circuit, overcharge, reverse charge, or the like, internal gas in the battery can be safely discharged and the battery prevented from bursting.
摘要:
In a semiconductor device including high-voltage, middle-voltage, and low voltage transistors having operating voltages different from one another, a gate length and a thickness of a gate oxide film are increased as the operating voltage is increased. Accordingly, in the high-voltage transistor, an electric field produced at a channel is relaxed. In the low-voltage transistor, a structure is made finer. A concentration of a well and an impurity amount implanted into a surface portion of a substrate are set to be identical with each other in all the transistors. Accordingly, the semiconductor device can be speedily manufactured at a high yield.