公开(公告)号：US08903340B2

公开(公告)日：2014-12-02

申请号：US13169699

申请日：2011-06-27

Applicant: Yuyu Chang ,  Hooman Darabi

Inventor： Yuyu Chang ,  Hooman Darabi

IPC: H03G3/34 ,  H03G3/30 ,  H04B1/10 ,  H03G11/02

CPC classification number: H04B1/109 ,  H03G3/3052 ,  H03G3/345 ,  H03G11/02

Abstract: Embodiments of a radio frequency (RF) receiver implementing one or more forms of protection to protect devices of the RF receiver from in-band interferers is provided. The RF receiver includes an integrated circuit terminal configured to couple a RF signal received at an antenna to a RF signal path, and a low noise amplifier (LNA) coupled to the RF signal path and configured to amplify the RF signal to provide an amplified RF signal. To protect the LNA from in-band interferers, the RF receiver can further include one or more clamping circuits and/or an over-voltage detector to determine if a peak of the RF signal exceeds an acceptable level.

Abstract translation: 提供了实现一种或多种形式的保护的射频（RF）接收机的实施例，以保护RF接收机的设备免受带内干扰。 RF接收机包括被配置为将在天线处接收的RF信号耦合到RF信号路径的集成电路终端和耦合到RF信号路径的低噪声放大器（LNA），并被配置为放大RF信号以提供放大RF 信号。 为了保护LNA免受带内干扰，RF接收机还可包括一个或多个钳位电路和/或过电压检测器，以确定RF信号的峰值是否超过可接受的电平。

公开(公告)号：US20120329418A1

公开(公告)日：2012-12-27

申请号：US13169681

申请日：2011-06-27

Applicant: Yuyu Chang ,  Hooman Darabi

Inventor： Yuyu Chang ,  Hooman Darabi

IPC: H04B1/10

CPC classification number: H03F1/52 ,  H03F3/195 ,  H03F3/45475 ,  H03F2200/294 ,  H03F2200/444 ,  H03F2200/453 ,  H03F2200/78

Abstract: Embodiments of a radio frequency (RF) receiver implementing one or more forms of protection to protect devices of the RF receiver from in-band interferers is provided. The RF receiver includes an integrated circuit terminal configured to couple a RF signal received at an antenna to a RF signal path, and a low noise amplifier (LNA) coupled to the RF signal path and configured to amplify the RF signal to provide an amplified RF signal. To protect the LNA from in-band interferers, the RF receiver can further include one or more clamping circuits and/or an over-voltage detector to determine if a peak of the RF signal exceeds an acceptable level.

Abstract translation: 提供了实现一种或多种形式的保护的射频（RF）接收机的实施例，以保护RF接收机的设备免受带内干扰。 RF接收机包括被配置为将在天线处接收的RF信号耦合到RF信号路径的集成电路终端和耦合到RF信号路径的低噪声放大器（LNA），并被配置为放大RF信号以提供放大RF 信号。 为了保护LNA免受带内干扰，RF接收机还可包括一个或多个钳位电路和/或过电压检测器，以确定RF信号的峰值是否超过可接受的电平。

公开(公告)号：US20090134932A1

公开(公告)日：2009-05-28

申请号：US11944715

申请日：2007-11-26

Applicant: Yuyu Chang ,  Hooman Darabi

Inventor： Yuyu Chang ,  Hooman Darabi

IPC: G06G7/16

CPC classification number: G06G7/16 ,  H03D7/1441 ,  H03D7/1458 ,  H03D7/1466 ,  H03D2200/0084

Abstract: Low flicker noise mixer and buffer. This design employs some native metal oxide semiconductor field-effect transistors (MOSFETs) (e.g., having no threshold voltage) within a passive mixer whose gates are driven using clock signals. These native MOSFETs maybe biased at one half of the power supply voltage to provide a lower noise figure. A cooperatively operating buffer employs appropriately places MOSFETs and resistors to ensure the desired gain. Relatively larger valued resistors can be employed to provide for higher voltage gain, and this can sometimes be accompanied with using a higher than typical power supply voltage. Source followers serve as output buffers and also ensure the required output DC voltage level as well. It is also noted that this design can be implemented using n-channel metal oxide semiconductor field-effect transistors (N-MOSFETs) of p-channel metal oxide semiconductor field-effect transistors (P-MOSFETs).

Abstract translation: 低闪烁噪声混频器和缓冲器。 该设计在无源混频器内采用一些本征金属氧化物半导体场效应晶体管（MOSFET）（例如，不具有阈值电压），其门的栅极使用时钟信号驱动。 这些原生MOSFET可能偏置在电源电压的一半处，以提供较低的噪声系数。 合作运行的缓冲器适当地放置MOSFET和电阻器以确保期望的增益。 可以采用相对较大值的电阻器来提供更高的电压增益，并且有时可以伴随使用高于典型的电源电压。 源跟随器用作输出缓冲器，并且还确保所需的输出直流电压电平。 还应注意，该设计可以使用p沟道金属氧化物半导体场效应晶体管（P-MOSFET）的n沟道金属氧化物半导体场效应晶体管（N-MOSFET）来实现。

公开(公告)号：US07990216B2

公开(公告)日：2011-08-02

申请号：US12474021

申请日：2009-05-28

Applicant: Yuyu Chang ,  Hooman Darabi

Inventor： Yuyu Chang ,  Hooman Darabi

IPC: H03F3/45

CPC classification number: H03F3/45188 ,  H03F3/195 ,  H03F2200/294 ,  H03F2200/451 ,  H03F2203/45384 ,  H03F2203/45386 ,  H03F2203/45392 ,  H03F2203/45544 ,  H03F2203/45548 ,  H03F2203/45554 ,  H03F2203/45596 ,  H03F2203/45638 ,  H04B1/18

Abstract: Cross-coupled low noise amplifier for cellular applications. A circuitry implementation that includes two pairs of metal oxide semiconductor field-effect transistors (MOSFETs) (either N-type of P-type) operates as an LNA, which can be used within any of a wide variety of communication devices. In one embodiment, this design is particularly adaptable to cellular telephone applications. A majority of the elements are integrated within the design and need not be implemented off-chip, and this can provide for a reduction in area required by the circuitry. A very high output impedance is provided by using two transistors (implemented in a triple well configuration) with resistive source degeneration. A higher than typical power supply voltage can be employed (if desired) to accommodate the voltage drops of the resistors and transistors.

Abstract translation: 用于蜂窝应用的交叉耦合低噪声放大器。 包括两对金属氧化物半导体场效应晶体管（MOSFET）（N型P型）的电路实现作为LNA工作，可以在各种通信设备中使用。 在一个实施例中，该设计特别适用于蜂窝电话应用。 大多数元件集成在设计中，不需要在片外实现，这可以减少电路所需的面积。 通过使用具有电阻源退化的两个晶体管（以三阱配置实现）来提供非常高的输出阻抗。 可以使用高于典型的电源电压（如果需要）以适应电阻器和晶体管的电压降。

公开(公告)号：US20110143822A1

公开(公告)日：2011-06-16

申请号：US13033289

申请日：2011-02-23

Applicant: Yuyu Chang ,  Hooman Darabi

Inventor： Yuyu Chang ,  Hooman Darabi

IPC: H04W88/02

CPC classification number: H03F3/195 ,  H03F3/45188 ,  H03F2203/45316 ,  H03F2203/45384 ,  H03F2203/45392 ,  H03F2203/45481 ,  H03F2203/45638

Abstract: Fully integrated compact cross-coupled low noise amplifier. A circuitry implementation that includes two pairs of metal oxide semiconductor field-effect transistors (MOSFETs) (either N-type of P-type) operates as an LNA, which can be used within any of a wide variety of communication devices. A majority of the elements are integrated within the design and need not be implemented off-chip, and this can provide for a reduction in area required by the circuitry. A differential 100Ω input impedance is provided by this design. A higher than typical power supply voltage can be employed (if desired) to accommodate one possible implementation that includes two parallel implemented resistors to ground.

Abstract translation: 全集成紧凑型交叉耦合低噪声放大器。 包括两对金属氧化物半导体场效应晶体管（MOSFET）（N型P型）的电路实现作为LNA工作，可以在各种通信设备中使用。 大多数元件集成在设计中，不需要在片外实现，这可以减少电路所需的面积。 差分100＆OHgr; 输入阻抗由本设计提供。 可以采用高于典型的电源电压（如果需要）以适应包括两个并联实现的接地电阻的一种可能的实现。

公开(公告)号：US07679431B2

公开(公告)日：2010-03-16

申请号：US11944715

申请日：2007-11-26

Applicant: Yuyu Chang ,  Hooman Darabi

Inventor： Yuyu Chang ,  Hooman Darabi

IPC: H03B1/00 ,  H03K5/00 ,  H04B1/10

CPC classification number: G06G7/16 ,  H03D7/1441 ,  H03D7/1458 ,  H03D7/1466 ,  H03D2200/0084

Abstract: Low flicker noise mixer and buffer. This design employs some native metal oxide semiconductor field-effect transistors (MOSFETs) (e.g., having no threshold voltage) within a passive mixer whose gates are driven using clock signals. These native MOSFETs maybe biased at one half of the power supply voltage to provide a lower noise figure. A cooperatively operating buffer employs appropriately places MOSFETs and resistors to ensure the desired gain. Relatively larger valued resistors can be employed to provide for higher voltage gain, and this can sometimes be accompanied with using a higher than typical power supply voltage. Source followers serve as output buffers and also ensure the required output DC voltage level as well. It is also noted that this design can be implemented using n-channel metal oxide semiconductor field-effect transistors (N-MOSFETs) of p-channel metal oxide semiconductor field-effect transistors (P-MOSFETs).

Abstract translation: 低闪烁噪声混频器和缓冲器。 该设计在无源混频器内采用一些本征金属氧化物半导体场效应晶体管（MOSFET）（例如，不具有阈值电压），其门的栅极使用时钟信号驱动。 这些原生MOSFET可能偏置在电源电压的一半处，以提供较低的噪声系数。 合作运行的缓冲器适当地放置MOSFET和电阻器以确保期望的增益。 可以采用相对较大值的电阻器来提供更高的电压增益，并且有时可以伴随使用高于典型的电源电压。 源跟随器用作输出缓冲器，并且还确保所需的输出直流电压电平。 还应注意，该设计可以使用p沟道金属氧化物半导体场效应晶体管（P-MOSFET）的n沟道金属氧化物半导体场效应晶体管（N-MOSFET）来实现。

公开(公告)号：US20090102562A1

公开(公告)日：2009-04-23

申请号：US11874305

申请日：2007-10-18

Applicant: Yuyu Chang ,  Hooman Darabi

Inventor： Yuyu Chang ,  Hooman Darabi

IPC: H03F3/16 ,  H03F3/45

CPC classification number: H03F3/45188 ,  H03F3/195 ,  H03F2200/294 ,  H03F2200/451 ,  H03F2203/45384 ,  H03F2203/45386 ,  H03F2203/45392 ,  H03F2203/45544 ,  H03F2203/45548 ,  H03F2203/45554 ,  H03F2203/45596 ,  H03F2203/45638 ,  H04B1/18

Abstract: Cross-coupled low noise amplifier for cellular applications. A circuitry implementation that includes two pairs of metal oxide semiconductor field-effect transistors (MOSFETs) (either N-type of P-type) operates as an LNA, which can be used within any of a wide variety of communication devices. In one embodiment, this design is particularly adaptable to cellular telephone applications. A majority of the elements are integrated within the design and need not be implemented off-chip, and this can provide for a reduction in area required by the circuitry. A very high output impedance is provided by using two transistors (implemented in a triple well configuration) with resistive source degeneration. A higher than typical power supply voltage can be employed (if desired) to accommodate the voltage drops of the resistors and transistors.

Abstract translation: 用于蜂窝应用的交叉耦合低噪声放大器。 包括两对金属氧化物半导体场效应晶体管（MOSFET）（N型P型）的电路实现作为LNA工作，可以在各种通信设备中使用。 在一个实施例中，该设计特别适用于蜂窝电话应用。 大多数元件集成在设计中，不需要在片外实现，这可以减少电路所需的面积。 通过使用具有电阻源退化的两个晶体管（以三阱配置实现）来提供非常高的输出阻抗。 可以使用高于典型的电源电压（如果需要）以适应电阻器和晶体管的电压降。

公开(公告)号：US08369818B2

公开(公告)日：2013-02-05

申请号：US13169681

申请日：2011-06-27

Applicant: Yuyu Chang ,  Hooman Darabi

Inventor： Yuyu Chang ,  Hooman Darabi

IPC: H04B1/16 ,  H03F3/45

CPC classification number: H03F1/52 ,  H03F3/195 ,  H03F3/45475 ,  H03F2200/294 ,  H03F2200/444 ,  H03F2200/453 ,  H03F2200/78

Abstract: Embodiments of a radio frequency (RF) receiver implementing one or more forms of protection to protect devices of the RF receiver from in-band interferers is provided. The RF receiver includes an integrated circuit terminal configured to couple a RF signal received at an antenna to a RF signal path, and a low noise amplifier (LNA) coupled to the RF signal path and configured to amplify the RF signal to provide an amplified RF signal. To protect the LNA from in-band interferers, the RF receiver can further include one or more clamping circuits and/or an over-voltage detector to determine if a peak of the RF signal exceeds an acceptable level.

Abstract translation: 提供了实现一种或多种形式的保护的射频（RF）接收机的实施例，以保护RF接收机的设备免受带内干扰。 RF接收机包括被配置为将在天线处接收的RF信号耦合到RF信号路径的集成电路终端和耦合到RF信号路径的低噪声放大器（LNA），并被配置为放大RF信号以提供放大RF 信号。 为了保护LNA免受带内干扰，RF接收机还可包括一个或多个钳位电路和/或过电压检测器，以确定RF信号的峰值是否超过可接受的电平。

公开(公告)号：US20120329417A1

公开(公告)日：2012-12-27

申请号：US13169699

申请日：2011-06-27

Applicant: Yuyu Chang ,  Hooman Darabi

Inventor： Yuyu Chang ,  Hooman Darabi

IPC: H04B7/00

CPC classification number: H04B1/109 ,  H03G3/3052 ,  H03G3/345 ,  H03G11/02

Abstract: Embodiments of a radio frequency (RF) receiver implementing one or more forms of protection to protect devices of the RF receiver from in-band interferers is provided. The RF receiver includes an integrated circuit terminal configured to couple a RF signal received at an antenna to a RF signal path, and a low noise amplifier (LNA) coupled to the RF signal path and configured to amplify the RF signal to provide an amplified RF signal. To protect the LNA from in-band interferers, the RF receiver can further include one or more clamping circuits and/or an over-voltage detector to determine if a peak of the RF signal exceeds an acceptable level.

Abstract translation: 提供了实现一种或多种形式的保护的射频（RF）接收机的实施例，以保护RF接收机的设备免受带内干扰。 RF接收机包括被配置为将在天线处接收的RF信号耦合到RF信号路径的集成电路终端和耦合到RF信号路径的低噪声放大器（LNA），并被配置为放大RF信号以提供放大RF 信号。 为了保护LNA免受带内干扰，RF接收机还可包括一个或多个钳位电路和/或过电压检测器，以确定RF信号的峰值是否超过可接受的电平。

公开(公告)号：US20090104873A1

公开(公告)日：2009-04-23

申请号：US11874314

申请日：2007-10-18

Applicant: Yuyu Chang ,  Hooman Darabi

Inventor： Yuyu Chang ,  Hooman Darabi

IPC: H04B7/14

CPC classification number: H03F3/195 ,  H03F3/45188 ,  H03F2203/45316 ,  H03F2203/45384 ,  H03F2203/45392 ,  H03F2203/45481 ,  H03F2203/45638

Abstract: Fully integrated compact cross-coupled low noise amplifier. A circuitry implementation that includes two pairs of metal oxide semiconductor field-effect transistors (MOSFETs) (either N-type of P-type) operates as an LNA, which can be used within any of a wide variety of communication devices. A majority of the elements are integrated within the design and need not be implemented off-chip, and this can provide for a reduction in area required by the circuitry. A differential 100Ω input impedance is provided by this design. A higher than typical power supply voltage can be employed (if desired) to accommodate one possible implementation that includes two parallel implemented resistors to ground.

Abstract translation: 全集成紧凑型交叉耦合低噪声放大器。 包括两对金属氧化物半导体场效应晶体管（MOSFET）（N型P型）的电路实现作为LNA工作，可以在各种通信设备中使用。 大多数元件集成在设计中，不需要在片外实现，这可以减少电路所需的面积。 此设计提供差分100Omega输入阻抗。 可以采用高于典型的电源电压（如果需要）以适应包括两个并联实现的接地电阻的一种可能的实现。