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20 条记录 (耗时 0.028 秒)

    Method for making three-dimensional nano-structure array
    1.
    发明授权
    Method for making three-dimensional nano-structure array 有权
    制备三维纳米结构阵列的方法

    公开(公告)号：US08865007B2

    公开(公告)日：2014-10-21

    申请号：US13340221

    申请日：2011-12-29

    申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Yuan-Hao Jin ,  Shou-Shan Fan

    发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Yuan-Hao Jin ,  Shou-Shan Fan

    IPC分类号： B29C59/14 ,  B82Y40/00 ,  B81C1/00

    CPC分类号： B81C1/00111 ,  B82Y40/00 ,  G03F7/0002

    摘要： A method for making three-dimensional nano-structure array is provided. The method includes following steps. A base is provided. A mask layer is located on the base. The mask layer is patterned, and a number of bar-shaped protruding structures is formed on a surface of the mask layer, a lot is defined between each of two adjacent protruding structures of the number of protruding structures to expose a portion of the base. The exposed portion of the base is etched through the slot so that the each of two adjacent protruding structures begin to slant face to face until they are contacting each other to form a protruding pair. The mask layer is removed.

    摘要翻译： 提供了制备三维纳米结构阵列的方法。 该方法包括以下步骤。 提供基地。 掩模层位于基座上。 掩模层被图案化，并且在掩模层的表面上形成许多条形突起结构，在突出结构的数量的两个相邻的突出结构中的每一个之间限定了许多以露出基部的一部分。 基底的暴露部分通过狭槽被蚀刻，使得两个相邻的突出结构中的每一个开始面对面地倾斜，直到它们彼此接触以形成突出的对。 去除掩模层。

    Manufacturing method of grating
    2.
    发明授权
    Manufacturing method of grating 有权
    光栅制造方法

    公开(公告)号：US08853096B2

    公开(公告)日：2014-10-07

    申请号：US13658029

    申请日：2012-10-23

    申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen

    发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen

    IPC分类号： H01L21/302

    CPC分类号： G02B5/1857 ,  B82Y10/00 ,  B82Y40/00 ,  G02B5/18 ,  G02B5/1809 ,  G03F7/0002 ,  G03F7/095 ,  G03F7/70691 ,  H01L33/508

    摘要： The disclosure relates to a method for making a grating. The method includes the following steps. First, a substrate is provided. Second, a photoresist film is formed on a surface of the substrate. Third, a nano-pattern is formed on the photoresist film by nano-imprint lithography. Fourth, the photoresist film is etched to form a patterned photoresist layer. Fifth, a mask layer is covered on the patterned photoresist layer and the surface of the substrate exposed to the patterned photoresist layer. Sixth, the patterned photoresist layer and the mask layer thereon are removed to form a patterned mask layer. Seventh, the substrate is etched through the patterned mask layer by reactive ion etching, wherein etching gases includes carbon tetrafluoride (CF4), sulfur hexafluoride (SF6) and argon (Ar2). Finally, the patterned mask layer is removed.

    摘要翻译： 本公开涉及一种制造光栅的方法。 该方法包括以下步骤。 首先，提供基板。 其次，在基板的表面上形成光致抗蚀剂膜。 第三，通过纳米压印光刻在光致抗蚀剂膜上形成纳米图案。 第四，蚀刻光致抗蚀剂膜以形成图案化的光致抗蚀剂层。 第五，在图案化的光致抗蚀剂层和暴露于图案化光致抗蚀剂层的基板的表面上覆盖掩模层。 第六，去除图案化的光致抗蚀剂层和其上的掩模层以形成图案化掩模层。 第七，通过反应离子蚀刻蚀刻通过图案化掩模层的衬底，其中蚀刻气体包括四氟化碳（CF 4），六氟化硫（SF 6）和氩（Ar 2）。 最后，去除图案化的掩模层。

    Light emitting diode
    3.
    发明授权
    Light emitting diode 有权
    发光二极管

    公开(公告)号：US08796716B2

    公开(公告)日：2014-08-05

    申请号：US13479233

    申请日：2012-05-23

    申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

    发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

    IPC分类号： H01L33/00

    CPC分类号： H01L33/24 ,  H01L33/005

    摘要： A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode covers the entire surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.

    摘要翻译： 提供了包括第一半导体层，有源层和第二半导体层的发光二极管。 第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。 有源层和第二半导体层以该顺序堆叠在第二表面上，并且第二半导体层远离有源层的表面被配置为发光表面。 第一电极覆盖第一半导体层的整个表面。 第二电极与第二半导体层电连接。 多个三维纳米结构位于第一半导体层的第一表面的表面上并排排列，并且每个三维纳米结构的横截面为M形。

    Light emitting diode
    4.
    发明授权
    Light emitting diode 有权
    发光二极管

    公开(公告)号：US08759858B2

    公开(公告)日：2014-06-24

    申请号：US13479230

    申请日：2012-05-23

    申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

    发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

    IPC分类号： H01L33/00

    CPC分类号： H01L33/24 ,  H01L33/06 ,  H01L33/22

    摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes an epitaxial growth surface and a light emitting surface. The first semiconductor layer, the active layer and the second semiconductor layer is stacked on the epitaxial growth surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.

    摘要翻译： 提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。 衬底包括外延生长表面和发光表面。 第一半导体层，有源层和第二半导体层堆叠在外延生长表面上。 第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。 有源层和第二半导体层以该顺序堆叠在第二表面上。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。 多个三维纳米结构位于第一半导体层的第一表面的表面上并排排列，并且每个三维纳米结构的横截面为M形。

    Method for making light emitting diode
    7.
    发明授权
    Method for making light emitting diode 有权
    制造发光二极管的方法

    公开(公告)号：US08778709B2

    公开(公告)日：2014-07-15

    申请号：US13479229

    申请日：2012-05-23

    申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

    发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

    IPC分类号： H01L21/00 ,  H01L33/00

    CPC分类号： H01L33/0079 ,  H01L33/0066 ,  H01L33/06 ,  H01L33/22 ,  H01L33/24

    摘要： A method for making light emitting diode includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is located to cover the entire surface of the second semiconductor layer which is away from the active layer.

    摘要翻译： 制造发光二极管的方法包括以下步骤。 提供基板。 在衬底的表面上生长第一半导体层。 图案化的掩模层位于第一半导体层的表面上，并且图案化掩模层包括多个棒状突出结构，在每个两个相邻的突出结构之间限定狭缝以暴露第一半导体层的一部分。 暴露的第一半导体层被蚀刻以形成突出的一对。 通过去除图案化掩模层形成多个三维纳米结构。 在三维纳米结构的数量上依次生长有源层和第二半导体层。 第一电极与第一半导体层电连接。 第二电极被定位成覆盖远离有源层的第二半导体层的整个表面。

    Nanoimprint resist
    8.
    发明授权
    Nanoimprint resist 有权
    纳米抗蚀剂

    公开(公告)号：US08574822B2

    公开(公告)日：2013-11-05

    申请号：US13479484

    申请日：2012-05-24

    申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen

    发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen

    IPC分类号： C08F2/50 ,  G03F1/00

    CPC分类号： B29C59/026 ,  B82Y10/00 ,  B82Y40/00 ,  C08G59/245 ,  C08L63/00 ,  G03F7/0002 ,  Y10T428/31544 ,  Y10T428/31855

    摘要： A nanoimprint resist includes a hyperbranched polyurethane oligomer, a perfluoropolyether, a methylmethacrylate, a diluent solvent, and a photo initiator. The hyperbranched polyurethane oligomer can be polymerized by a copolymerization of trimellitic anhydride, ethylene mercaptan, and epoxy acrylic acid. The hyperbranched polyurethane oligomer can also be polymerized by a ring-opening copolymerization epoxy acrylic acid and ethylene glycol.

    摘要翻译： 纳米压印抗蚀剂包括超支化聚氨酯低聚物，全氟聚醚，甲基丙烯酸甲酯，稀释剂溶剂和光引发剂。 超支化聚氨酯低聚物可以通过偏苯三酸酐，乙烯硫醇和环氧丙烯酸的共聚来聚合。 超支化聚氨酯低聚物也可以通过开环共聚环氧丙烯酸和乙二醇聚合。

    Method for detecting single molecule
    9.
    发明授权
    Method for detecting single molecule 有权
    单分子检测方法

    公开(公告)号：US08502971B2

    公开(公告)日：2013-08-06

    申请号：US13092144

    申请日：2011-04-21

    申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen

    发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen

    IPC分类号： G01J3/44 ,  G01N15/06 ,  G01N21/00 ,  C12Q1/00 ,  C12M3/00 ,  C12P19/34

    CPC分类号： G01N21/658 ,  Y02P20/582

    摘要： A method for detecting single molecule includes providing a carrier. The carrier includes a substrate and a metal layer. The substrate has a surface and defines a number of blind holes caved in the substrate from the surface thereof. The metal layer covers the surface of the substrate and inner surfaces of the number of blind holes. Single molecule samples are disposed on the metal layer. The single molecule samples are detected by a Raman Spectroscopy system.

    摘要翻译： 检测单分子的方法包括提供载体。 载体包括基底和金属层。 衬底具有表面并且限定了从其表面在衬底中凹陷的多个盲孔。 金属层覆盖基板的表面和盲孔数的内表面。 单分子样品设置在金属层上。 单分子样品通过拉曼光谱系统检测。