公开(公告)号：US09112058B2

公开(公告)日：2015-08-18

申请号：US13229338

申请日：2011-09-09

申请人： Zhenan Bao ,  Benjamin Chee-Keong Tee ,  Stefan Christian Bernhardt Mannsfeld ,  Justin P. Opatkiewicz

发明人： Zhenan Bao ,  Benjamin Chee-Keong Tee ,  Stefan Christian Bernhardt Mannsfeld ,  Justin P. Opatkiewicz

IPC分类号： G06F3/045 ,  G06F3/041 ,  H03K17/94 ,  H01G7/00 ,  H01L29/84 ,  G01L1/14 ,  H01L51/00 ,  H01L51/05

CPC分类号： G01L1/146 ,  G01L1/148 ,  G06F3/0412 ,  G06F3/0414 ,  G06F3/044 ,  G06F2203/04102 ,  G06F2203/04103 ,  G06F2203/04107 ,  H01L29/84 ,  H01L51/0055 ,  H01L51/0541 ,  Y10T29/49002 ,  Y10T156/10

摘要： Input devices are provided. In accordance with an example embodiment, an input device includes an interface layer that flexes in response to pressure, a plurality of sense electrodes, a dielectric between the sense electrodes and the interface layer, and interconnecting circuitry. The dielectric compresses or expands in response to movement of the interface layer, and exhibits dielectric characteristics that vary based upon a state of compression of the dielectric. The interconnecting circuitry is coupled to the sense electrodes and provides an output indicative of both the position of each sense electrode and an electric characteristic at each sense electrode that provides an indication of pressure applied to the dielectric adjacent the respective sense electrodes.

摘要翻译： 提供输入设备。 根据示例实施例，输入装置包括响应于压力而弯曲的界面层，多个感测电极，感测电极和界面层之间的电介质以及互连电路。 电介质根据界面层的移动而压缩或膨胀，并且表现出基于电介质的压缩状态而变化的介电特性。 互连电路耦合到感测电极并且提供指示每个感测电极的位置和每个感测电极处的电特性的输出，其提供施加到相邻感测电极附近的电介质的压力的指示。

公开(公告)号：US20120062245A1

公开(公告)日：2012-03-15

申请号：US13229324

申请日：2011-09-09

申请人： Zhenan Bao ,  Stefan Christian Bernhardt Mannsfeld ,  Jason Locklin ,  Benjamin Chee-Keong Tee

发明人： Zhenan Bao ,  Stefan Christian Bernhardt Mannsfeld ,  Jason Locklin ,  Benjamin Chee-Keong Tee

IPC分类号： G01R27/26 ,  H05K13/00 ,  H01L29/84

CPC分类号： G01L1/146 ,  G01L1/148 ,  G06F3/0412 ,  G06F3/0414 ,  G06F3/044 ,  G06F2203/04102 ,  G06F2203/04103 ,  G06F2203/04107 ,  H01L29/84 ,  H01L51/0055 ,  H01L51/0541 ,  Y10T29/49002 ,  Y10T156/10

摘要： Sensors, sensing arrangements and devices, and related methods are provided. In accordance with an example embodiment, an impedance-based sensor includes a flexible dielectric material and generates an output based on pressure applied to the dielectric material and a resulting compression thereof. In certain embodiments, the dielectric material includes a plurality of regions separated by gaps and configured to elastically deform and recover in response to applied pressure.

摘要翻译： 提供了传感器，感测装置和设备以及相关方法。 根据示例实施例，基于阻抗的传感器包括柔性电介质材料，并且基于施加到电介质材料的压力产生输出，并且由此产生压缩。 在某些实施例中，电介质材料包括由间隙分开并被构造为响应于所施加的压力弹性变形和恢复的多个区域。

公开(公告)号：US20110248267A1

公开(公告)日：2011-10-13

申请号：US13079879

申请日：2011-04-05

申请人： Peng Wei ,  Zhenan Bao ,  Joon Hak Oh

发明人： Peng Wei ,  Zhenan Bao ,  Joon Hak Oh

IPC分类号： H01L21/22 ,  H01L29/04

CPC分类号： H01L51/002 ,  B82Y10/00 ,  H01L51/0047 ,  H01L51/0094 ,  H01L51/0525 ,  H01L51/0545

摘要： In connection with various example embodiments, an organic electronic device is provided with an organic material that is susceptible to decreased mobility due to the trapping of electron charge carriers in response to exposure to air. The organic material is doped with an n-type dopant that, when combined with the organic material, effects air stability for the doped organic material (e.g., exhibits a mobility that facilitates stable operation in air, such as may be similar to operation in inert environments). Other embodiments are directed to organic electronic devices n-doped and exhibiting such air stability.

摘要翻译： 结合各种示例实施例，有机电子器件被提供有有机材料，其由于电子电荷载体响应于暴露于空气而被俘获而易于降低迁移率。 有机材料掺杂有n型掺杂剂，当与有机材料组合时，掺杂的有机材料具有空气稳定性（例如，表现出促进在空气中稳定运行的迁移率，例如可以类似于在惰性中的操作） 环境）。 其他实施方案涉及n掺杂并表现出这种空气稳定性的有机电子器件。

公开(公告)号：US07795145B2

公开(公告)日：2010-09-14

申请号：US11353934

申请日：2006-02-15

申请人： Marcos Gomez ,  Peter Erk ,  Frauke Richter ,  Zhenan Bao ,  Shuhong Liu

发明人： Marcos Gomez ,  Peter Erk ,  Frauke Richter ,  Zhenan Bao ,  Shuhong Liu

IPC分类号： H01L21/44

CPC分类号： H01L51/0003 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L51/0019 ,  H01L51/0068 ,  H01L51/0533 ,  H01L51/0545

摘要： A method of patterning the surface of a substrate with at least one organic semiconducting compound including: (a) providing a stamp having a surface including a plurality of indentations formed therein defining an indentation pattern contiguous with a stamping surface and defining a stamping pattern, (b) coating the stamping surface with at least one compound (C1) capable of binding to the surface of the substrate and at least one organic semiconducting compound (S), (c) contacting at least a portion of the surface of a substrate with the stamping surface to allow deposition of the compound (C1) on the substrate, (d) removing the stamping surface to provide a pattern of binding sites on the surface of the substrate, (e) applying a plurality of crystallites of the organic semiconducting compound (S) to the surface of the substrate to bind at least a portion of the applied crystallites to the binding sites on the surface of the substrate.

摘要翻译： 一种利用至少一种有机半导体化合物对衬底的表面进行图案化的方法，包括：（a）提供具有表面的印模，所述表面包括形成在其中的多个凹口，所述压痕限定与冲压表面邻接的压痕图案并限定冲压图案（ b）用至少一种能够结合到基底表面的化合物（C1）和至少一种有机半导体化合物（S）涂覆冲压表面，（c）将基底表面的至少一部分与 冲压表面以允许化合物（C1）沉积在基底上，（d）去除冲压表面以在基底表面上提供结合位点的图案，（e）施加多个有机半导体化合物的微晶（ S）到基底的表面以将至少一部分施加的微晶结合到基底表面上的结合位点。

公开(公告)号：US07767998B2

公开(公告)日：2010-08-03

申请号：US10727709

申请日：2003-12-04

申请人： Zhenan Bao

发明人： Zhenan Bao

IPC分类号： H01L35/24

CPC分类号： H01L51/0541 ,  H01L51/0012 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0558

摘要： The present invention provides apparatus and a method of fabricating the apparatus. The apparatus includes a substrate having a surface and an organic field-effect transistor (OFET) located adjacent the surface of the substrate. The OFET comprising a gate, a channel, a source electrode, and a drain electrode. The channel comprises a densified layer of organic molecules with conjugated multiple bonds, axes of the organic molecules being oriented substantially normal to the surface.

摘要翻译： 本发明提供了一种装置及其制造方法。 该装置包括具有表面的衬底和位于衬底表面附近的有机场效应晶体管（OFET）。 OFET包括栅极，沟道，源电极和漏电极。 该通道包括具有共轭多重键的有机分子的致密化层，有机分子的轴线基本上垂直于表面。

公开(公告)号：US07189987B2

公开(公告)日：2007-03-13

申请号：US10405398

申请日：2003-04-02

申请人： Zhenan Bao ,  Bernard Yurke

发明人： Zhenan Bao ,  Bernard Yurke

IPC分类号： H01L51/00

CPC分类号： G01N27/4145

摘要： The present invention provides an organic field effect transistor and a method of fabricating the transistor. The transistor includes a semiconductive film comprising organic molecules. Probe molecules capable of binding to target molecules are coupled to an outer surface of the semiconductive film such that the interior of the film being substantially free of the probe molecules.

摘要翻译： 本发明提供一种有机场效应晶体管及其制造方法。 晶体管包括包含有机分子的半导体膜。 能够结合靶分子的探针分子被偶联到半导体膜的外表面，使得膜的内部基本上不含探针分子。

公开(公告)号：US07122828B2

公开(公告)日：2006-10-17

申请号：US10671303

申请日：2003-09-24

申请人： Zhenan Bao ,  Howard Edan Katz ,  Jeffrey Scott Meth

发明人： Zhenan Bao ,  Howard Edan Katz ,  Jeffrey Scott Meth

IPC分类号： H01L35/24

CPC分类号： H01L27/283 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0516

摘要： Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.

摘要翻译： 半导体装置，包括：具有基板表面的基板; 覆盖衬底表面的第一区域的第一材料层; 覆盖所述第一材料层并覆盖所述衬底表面的第二区域的半导体层; 覆盖第一材料层并具有第一导电性的半导体层的第一区域; 半导体层的第二区域，覆盖在衬底表面的第二区域上并具有第二导电性; 并且第一导电性与第二导电性基本不同。 这种半导体装置还包括覆盖衬底表面的第二区域的第二材料层，覆盖第二材料层的半导体层的第二区域。

公开(公告)号：US20050242345A1

公开(公告)日：2005-11-03

申请号：US11177602

申请日：2005-07-08

申请人： Zhenan Bao

发明人： Zhenan Bao

IPC分类号： H01L51/05 ,  H01L21/336 ,  H01L21/338 ,  H01L29/76 ,  H01L29/78 ,  H01L29/786 ,  H01L29/812 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01L29/08

CPC分类号： H01L51/0541 ,  H01L51/0012 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0558

摘要： The present invention provides apparatus and a method of fabricating the apparatus. The apparatus includes a substrate having a surface and an organic field-effect transistor (OFET) located adjacent the surface of the substrate. The OFET comprising a gate, a channel, a source electrode, and a drain electrode. The channel comprises a densified layer of organic molecules with conjugated multiple bonds, axes of the organic molecules being oriented substantially normal to the surface.

摘要翻译： 本发明提供了一种装置及其制造方法。 该装置包括具有表面的衬底和位于衬底表面附近的有机场效应晶体管（OFET）。 OFET包括栅极，沟道，源电极和漏电极。 该通道包括具有共轭多重键的有机分子的致密化层，有机分子的轴线基本上垂直于表面。

公开(公告)号：US20050148129A1

公开(公告)日：2005-07-07

申请号：US11042240

申请日：2005-01-25

申请人： Zhenan Bao ,  Valerie Jeanne Kuck ,  Mark Paczkowski

发明人： Zhenan Bao ,  Valerie Jeanne Kuck ,  Mark Paczkowski

IPC分类号： H01L21/312 ,  H01L29/76 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L21/8234

CPC分类号： H01L51/0516 ,  H01L21/02137 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02315 ,  H01L21/3124 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0078 ,  H01L51/0545

摘要： An organic field effect transistor (FET) is described with an active dielectric layer comprising a low-temperature cured dielectric film of a liquid-deposited silsesquioxane precursor. The dielectric film comprises a silsesquioxane having a dielectric constant of greater than 2. The silsesquioxane dielectric film is advantageously prepared by curing oligomers having alkyl(methyl) and/or alkyl(methyl) pendant groups. The invention also embraces a process for making an organic FET comprising providing a substrate suitable for an organic FET; applying a liquid-phase solution of silsesquioxane precursors over the surface of the substrate; and curing the solution to form a silsesquioxane active dielectric layer. The organic FET thus produced has a high-dielectric, silsesquioxane film with a dielectric constant of greater than about 2, and advantageously, the substrate comprises an indium-tin oxide coated plastic substrate.

摘要翻译： 有机场效应晶体管（FET）用具有液晶沉积倍半硅氧烷前体的低温固化电介质膜的有源电介质层进行描述。 电介质膜包括介电常数大于2的倍半硅氧烷。有效地通过固化具有（甲基）和/或烷基（甲基）侧基的低聚物来制备倍半硅氧烷介电膜。 本发明还包括制造有机FET的方法，其包括提供适合于有机FET的衬底; 在所述基材的表面上施加倍半硅氧烷前体的液相溶液; 并固化该溶液以形成倍半硅氧烷活性介电层。 由此产生的有机FET具有介电常数大于约2的高电介质的倍半硅氧烷膜，并且有利的是，衬底包括氧化铟锡涂覆的塑料衬底。

公开(公告)号：US20050064623A1

公开(公告)日：2005-03-24

申请号：US10669780

申请日：2003-09-24

申请人： Zhenan Bao

发明人： Zhenan Bao

IPC分类号： H01L21/762 ,  H01L21/336 ,  H01L27/28 ,  H01L29/786 ,  H01L51/05 ,  H01L51/40

CPC分类号： H01L51/0541 ,  H01L27/28 ,  H01L51/0545

摘要： A method for making an IC on a surface of a planar substrate includes forming a continuous first layer on the surface of the substrate and pressing a surface of a stamp into the first layer to produce a pattern of non-intersecting smooth regions on the surface. A rough region of the surface of the first layer laterally borders and laterally surrounds each smooth region of the surface of the first layer. The pattern of smooth and rough regions on the surface of the first layer copies a pattern of smooth and rough areas on the surface of the stamp. The method also includes forming a continuous second layer on the patterned first layer. The first layer is one of a dielectric layer and an organic semiconductor layer, and the second layer is the other of a dielectric layer and an organic semiconductor layer.