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    Gas delivery system for semiconductor processing
    7.
    发明授权
    Gas delivery system for semiconductor processing 有权
    用于半导体加工的气体输送系统

    公开(公告)号：US07498268B2

    公开(公告)日：2009-03-03

    申请号：US11552129

    申请日：2006-10-23

    申请人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom K. Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh N. Pham ,  Zhong Qiang Hua

    发明人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom K. Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh N. Pham ,  Zhong Qiang Hua

    IPC分类号： H01L21/461 ,  H01L21/302

    CPC分类号： H01L21/67017 ,  H01L21/67109

    摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

    摘要翻译： 本发明旨在改善半导体处理系统中的缺陷性能。 在具体实施例中，用于处理半导体衬底的设备包括限定其中的处理区域的腔室和设置在腔室中以支撑半导体衬底的衬底支撑件。 至少一个喷嘴延伸到室中以通过喷嘴开口将工艺气体引入室中。 该装置包括至少一个隔热罩，每个隔热罩设置在至少一个喷嘴之一的至少一部分周围。 隔热罩具有向喷嘴的喷嘴开口向远侧突出的延伸部分，其包括用于工艺气体从喷嘴开口流过的隔热开口。 隔热罩降低了处理室中的喷嘴的温度，用于将工艺气体引入其中以减少颗粒。

    Gas distribution system for improved transient phase deposition
    8.
    发明申请
    Gas distribution system for improved transient phase deposition 有权
    用于改善瞬态相沉积的气体分配系统

    公开(公告)号：US20060113038A1

    公开(公告)日：2006-06-01

    申请号：US11123453

    申请日：2005-05-04

    申请人： Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad Rasheed ,  Harry Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer

    发明人： Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad Rasheed ,  Harry Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer

    IPC分类号： H01L21/306 ,  C23F1/00

    CPC分类号： C23C16/4558

    摘要： Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.

    摘要翻译： 本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。 在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。 气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。 多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。 多个孔流体耦合在第一通道和第二通道之间。 多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加 沿着第一通道测量的孔口和气体入口。

    Gas Distribution System for Improved Transient Phase Deposition
    10.
    发明申请
    Gas Distribution System for Improved Transient Phase Deposition 审中-公开
    用于改进瞬态相沉积的气体分配系统

    公开(公告)号：US20080041821A1

    公开(公告)日：2008-02-21

    申请号：US11877502

    申请日：2007-10-23

    申请人： Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad Rasheed ,  Harry Smith Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer ,  Diana Gujer

    发明人： Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad Rasheed ,  Harry Smith Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer ,  Diana Gujer

    IPC分类号： C23F1/00

    CPC分类号： C23C16/4558

    摘要： Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.

    摘要翻译： 本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。 在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。 气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。 多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。 多个孔流体耦合在第一通道和第二通道之间。 多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加 沿着第一通道测量的孔口和气体入口。