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    Process and apparatus for manufacturing fiber and fiber sheet carrying solid particles and fiber and fiber sheet carrying solid particles
    3.
    发明授权
    Process and apparatus for manufacturing fiber and fiber sheet carrying solid particles and fiber and fiber sheet carrying solid particles 有权
    用于制造携带固体颗粒的纤维和纤维片材以及承载固体颗粒的纤维和纤维片材的方法和装置

    公开(公告)号：US06863921B2

    公开(公告)日：2005-03-08

    申请号：US10234336

    申请日：2002-09-05

    申请人： Tatsuo Nakamura ,  Susumu Hasegawa ,  Koichi Kato

    发明人： Tatsuo Nakamura ,  Susumu Hasegawa ,  Koichi Kato

    IPC分类号： D01F8/04 ,  D03D15/00 ,  D04H1/413 ,  D06M11/46 ,  D06M11/74 ,  D06M11/76 ,  D06M11/77 ,  D06M23/08 ,  D21H13/14 ,  D21H15/10 ,  D21H19/38 ,  D21H23/64 ,  B05D1/02

    CPC分类号： D06M23/08 ,  D21H13/14 ,  D21H15/10 ,  D21H19/36 ,  D21H19/385 ,  D21H23/50 ,  D21H23/64 ,  Y10T428/24942 ,  Y10T428/249924 ,  Y10T428/25 ,  Y10T428/2927 ,  Y10T428/2933 ,  Y10T428/2958

    摘要： Disclosed is a process for manufacturing a fiber having at least a surface comprised mainly of a thermoplastic resin and carrying solid particles affixed to the surface, comprising the steps of: heating the solid particles having a melting point or a decomposition point higher than a melting point of the thermoplastic resin, to a temperature higher than the melting point of the thermoplastic resin, bringing the heated solid particles into contact with the fiber while maintaining the temperature of the heated solid particles higher than the melting point of the thermoplastic resin to bond the solid particles to a fiber surface by fusing the fiber surface, and cooling the fused fiber carrying the solid particle to affix the solid particles to the fiber surface. Further, an apparatus of manufacturing the same, and a fiber having at least a surface comprised mainly of a thermoplastic resin and carrying solid particles affixed to the surface are also disclosed.

    摘要翻译： 公开了一种制造纤维的方法，该纤维至少具有主要由热塑性树脂构成的表面，并承载固定在该表面上的固体颗粒，包括以下步骤：加热具有高于熔点的熔点或分解点的固体颗粒 的热塑性树脂的温度升高到高于热塑性树脂的熔点的温度，使加热的固体颗粒与纤维接触，同时保持加热的固体颗粒的温度高于热塑性树脂的熔点，以将固体 通过熔融纤维表面将颗粒粘合到纤维表面，以及将携带固体颗粒的熔融纤维冷却以将固体颗粒固定在纤维表面上。 此外，还公开了一种制造装置，以及至少具有主要由热塑性树脂构成的表面并承载固定在表面上的固体颗粒的表面的纤维。

    Method of manufacturing semiconductor device
    4.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08426302B2

    公开(公告)日：2013-04-23

    申请号：US13370532

    申请日：2012-02-10

    申请人： Daisuke Matsushita ,  Koichi Kato ,  Yuichiro Mitani

    发明人： Daisuke Matsushita ,  Koichi Kato ,  Yuichiro Mitani

    IPC分类号： H01L21/3205 ,  H01L21/4763

    CPC分类号： H01L29/7926 ,  G11C16/0466 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02312 ,  H01L21/28282 ,  H01L21/32105 ,  H01L27/11582 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78678

    摘要： A method of manufacturing a semiconductor device according to an embodiment, includes: forming a stack structure by alternately stacking control gate electrodes and interlayer insulating films; forming a through-hole that penetrates through the stack structure in a stacking direction of the control gate electrodes and the interlayer insulating films; forming a first insulating film that covers an inner surface of the through-hole; forming a charge storage layer that covers an inner surface of the first insulating film; forming a second insulating film that covers an inner surface of the charge storage layer; forming a semiconductor layer that covers an inner surface of the second insulating film; and oxidizing an interface between the semiconductor layer and the second insulating film by performing a heat treatment in an atmosphere containing O2 gas at a temperature of 600° C. or lower.

    摘要翻译： 根据实施例的制造半导体器件的方法包括：通过交替堆叠控制栅电极和层间绝缘膜形成堆叠结构; 在所述控制栅电极和所述层间绝缘膜的堆叠方向上形成穿过所述堆叠结构的通孔; 形成覆盖所述通孔的内表面的第一绝缘膜; 形成覆盖所述第一绝缘膜的内表面的电荷存储层; 形成覆盖所述电荷存储层的内表面的第二绝缘膜; 形成覆盖所述第二绝缘膜的内表面的半导体层; 在600℃以下的温度下，在含有O 2气体的气氛中进行热处理，氧化半导体层与第二绝缘膜的界面。

    X-RAY GENERATOR
    5.
    发明申请
    X-RAY GENERATOR 有权
    X射线发生器

    公开(公告)号：US20120163550A1

    公开(公告)日：2012-06-28

    申请号：US13337940

    申请日：2011-12-27

    申请人： Tomohiro Chaki ,  Koichi Kato ,  Masahiro Nonoguchi ,  Masashi Kageyama ,  Masaru Kuribayashi

    发明人： Tomohiro Chaki ,  Koichi Kato ,  Masahiro Nonoguchi ,  Masashi Kageyama ,  Masaru Kuribayashi

    IPC分类号： H01J35/06

    CPC分类号： H01J35/10 ,  H01J35/06 ,  H01J35/14 ,  H01J35/16 ,  H01J2235/06 ,  H01J2235/086 ,  H01J2235/166 ,  H01J2235/168

    摘要： Provided is an X-ray generator for generating X-rays from an X-ray focal point that is a region in which electrons emitted from a filament impinge upon a rotating anode. The X-ray generator has a Wehnelt electrode for surrounding the filament, an attachment part formed integrally with the Wehnelt electrode, a pedestal to which the attachment part is attached, and a casing for housing the pedestal and the anticathode. The width of the space in which the anticathode is housed by the casing is less than the width of the space in which the pedestal is housed by the casing. The Wehnelt electrode extends into the space in which the anticathode is housed by the casing, in a state in which the attachment part is attached to the pedestal.

    摘要翻译： 提供一种用于从X射线焦点产生X射线的X射线发生器，X射线焦点是从灯丝发射的电子撞击在旋转阳极上的区域。 X射线发生器具有用于围绕灯丝的Wehnelt电极，与Wehnelt电极一体形成的安装部分，安装有附接部件的基座以及用于容纳基座和抗电极的壳体。 由外壳容纳防蚁的空间的宽度小于由壳体容纳基座的空间的宽度。 Wehnelt电极在安装部分附接到基座的状态下延伸到由壳体容纳阴极的空间中。

    Semiconductor device and method for manufacturing the same
    9.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07749919B2

    公开(公告)日：2010-07-06

    申请号：US11896860

    申请日：2007-09-06

    申请人： Kiwamu Sakuma ,  Daisuke Matsushita ,  Koichi Kato ,  Yasushi Nakasaki ,  Izumi Hirano ,  Kouichi Muraoka ,  Yuichiro Mitani ,  Shigeto Fukatsu ,  Toshihide Ito

    发明人： Kiwamu Sakuma ,  Daisuke Matsushita ,  Koichi Kato ,  Yasushi Nakasaki ,  Izumi Hirano ,  Kouichi Muraoka ,  Yuichiro Mitani ,  Shigeto Fukatsu ,  Toshihide Ito

    IPC分类号： H01L21/321

    CPC分类号： H01L21/28273

    摘要： A semiconductor device includes: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate, the portion being located between the source region and the drain region; a charge storage film formed on the first insulating film; a second insulating film formed above the charge storage film and made of a high-permittivity material; a control gate electrode formed above the second insulating film; and a silicon nitride layer including nitrogen atoms having three-coordinate nitrogen bonds, at least one of second-nearest neighbor atoms of the nitrogen atoms being a nitrogen atom. At least one of the charge storage film and the control gate electrode contains silicon, the silicon nitride layer is located between the second insulating film and the at least one of the charge storage film and the control gate electrode.

    摘要翻译： 半导体器件包括：半导体衬底; 在半导体衬底中形成为彼此间隔一定距离的源极区域和漏极区域; 形成在半导体衬底的一部分上的第一绝缘膜，该部分位于源区和漏区之间; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上方并由高介电常数材料制成的第二绝缘膜; 形成在所述第二绝缘膜上方的控制栅电极; 和包含具有三配位氮键的氮原子的氮化硅层，氮原子的第二最近邻原子中的至少一个为氮原子。 电荷存储膜和控制栅电极中的至少一个包含硅，氮化硅层位于第二绝缘膜和电荷存储膜和控制栅电极中的至少一个之间。

    SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SAME
    10.
    发明申请
    SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20090134388A1

    公开(公告)日：2009-05-28

    申请号：US12203409

    申请日：2008-09-03

    申请人： Takashi YAMAUCHI ,  Yoshifumi Nishi ,  Yoshinori Tsuchiya ,  Junji Koga ,  Koichi Kato

    发明人： Takashi YAMAUCHI ,  Yoshifumi Nishi ,  Yoshinori Tsuchiya ,  Junji Koga ,  Koichi Kato

    IPC分类号： H01L29/08 ,  H01L21/06

    CPC分类号： H01L21/26513 ,  H01L21/26506 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/7833

    摘要： A semiconductor device having a metal insulator semiconductor field effect transistor (MISFET) with interface resistance-reduced source/drain electrodes is disclosed. This device includes a p-type MISFET formed on a semiconductor substrate. The p-MISFET has a channel region in the substrate, a gate insulating film on the channel region, a gate electrode on the gate insulating film, and a pair of laterally spaced-apart source and drain electrodes on both sides of the channel region. These source/drain electrodes are each formed of a nickel (Ni)-containing silicide layer. The p-MISFET further includes an interface layer which is formed on the substrate side of an interface between the substrate and each source/drain electrode. This interface layer contains magnesium (Mg), calcium (Ca) or barium (Ba) therein. A fabrication method of the semiconductor device is also disclosed.

    摘要翻译： 公开了一种具有金属绝缘体半导体场效应晶体管（MISFET）的半导体器件，具有接口电阻降低的源/漏电极。 该器件包括形成在半导体衬底上的p型MISFET。 p-MISFET在衬底中具有沟道区，沟道区上的栅极绝缘膜，栅极绝缘膜上的栅电极，以及沟道区两侧的一对侧向间隔开的源极和漏极。 这些源极/漏极各自由含镍（Ni）的硅化物层形成。 p-MISFET还包括界面层，该界面层形成在基板和每个源极/漏极之间的界面的基板侧上。 该界面层中含有镁（Mg），钙（Ca）或钡（Ba）。 还公开了半导体器件的制造方法。