公开(公告)号：US11072622B2

公开(公告)日：2021-07-27

申请号：US16406532

申请日：2019-05-08

申请人： ASM INTERNATIONAL N.V.

发明人： Viljami Pore ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskelä

IPC分类号： C07F11/00 ,  C23C16/30 ,  C23C16/455 ,  H01L45/00 ,  H01L21/02

摘要： Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

公开(公告)号：US11056385B2

公开(公告)日：2021-07-06

申请号：US16213479

申请日：2018-12-07

申请人： ASM International N.V.

发明人： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC分类号： H01L21/768 ,  H01L21/285 ,  C23C16/04 ,  C23C16/14 ,  H01L21/02 ,  H01L21/3105 ,  C23C16/455 ,  H01L23/532

摘要： Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US10699899B2

公开(公告)日：2020-06-30

申请号：US16105312

申请日：2018-08-20

申请人： ASM International N.V.

发明人： Raija H. Matero ,  Linda Lindroos ,  Hessel Sprey ,  Jan Willem Maes ,  David de Roest ,  Dieter Pierreux ,  Kees van der Jeugd ,  Lucia D'Urzo ,  Tom E. Blomberg

IPC分类号： H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L29/51 ,  H01L21/28 ,  H01L21/22 ,  C23F1/26

摘要： Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

公开(公告)号：US10648078B2

公开(公告)日：2020-05-12

申请号：US15322653

申请日：2015-11-03

申请人： ASM International N.V.

发明人： Ernst Hendrik August Granneman ,  Leilei Hu

IPC分类号： C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  H01L21/677 ,  C23C16/54 ,  H01J37/32

摘要： An atomic layer deposition apparatus, having a first series of high pressure gas injection openings and a first series of exhaust openings that are positioned such that they together create a first high pressure/suction zone within each purge gas zone, wherein each first high pressure/suction zone extends over substantially the entire width of the process tunnel and wherein the distribution of the gas injection openings that are connected to the second purge gas source and the distribution of the gas exhaust openings within the first high pressure/suction zone, as well as the pressure of the second purge gas source and the pressure at the gas exhaust openings are such that the average pressure within the first high pressure/suction zone deviates less than 30% from a reference pressure which is defined by the average pressure within process tunnel when no substrate is present.

公开(公告)号：US10308673B2

公开(公告)日：2019-06-04

申请号：US15711690

申请日：2017-09-21

申请人： ASM INTERNATIONAL N.V.

发明人： Viljami Pore ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskelä

IPC分类号： C23C16/30 ,  C07F11/00 ,  C23C16/455 ,  H01L45/00 ,  H01L21/02

摘要： Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

公开(公告)号：US10147600B2

公开(公告)日：2018-12-04

申请号：US15873776

申请日：2018-01-17

申请人： ASM International N.V.

发明人： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC分类号： H01L21/02 ,  H01L21/324 ,  H01L21/225 ,  H01L29/66 ,  H01L21/22

摘要： The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

公开(公告)号：US09831094B2

公开(公告)日：2017-11-28

申请号：US14812139

申请日：2015-07-29

申请人： ASM International N.V.

发明人： Antti Rahtu ,  Eva Tois ,  Kai-Erik Elers ,  Wei-Min Li

IPC分类号： C23C16/455 ,  H01L21/285 ,  C23C16/32 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L21/312

CPC分类号： H01L21/0228 ,  C23C16/32 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45553 ,  H01L21/02205 ,  H01L21/28088 ,  H01L21/285 ,  H01L21/28562 ,  H01L21/312 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/3205 ,  H01L21/32055 ,  H01L21/32056 ,  H01L21/76843

摘要： Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.

公开(公告)号：US09783563B2

公开(公告)日：2017-10-10

申请号：US14882083

申请日：2015-10-13

申请人： ASM INTERNATIONAL N.V.

发明人： Viljami Pore ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskelä

IPC分类号： C07F7/02 ,  C07F11/00 ,  C23C16/30 ,  C23C16/455 ,  H01L45/00 ,  H01L21/02

CPC分类号： C07F11/005 ,  C23C16/306 ,  C23C16/45553 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/0262 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1616 ,  Y02P20/582

摘要： Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

公开(公告)号：US09646820B2

公开(公告)日：2017-05-09

申请号：US14570668

申请日：2014-12-15

申请人： ASM INTERNATIONAL N.V.

发明人： Viljami Pore ,  Mikko Ritala ,  Markku Leskela

IPC分类号： C23C16/00 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01G4/12 ,  H01G4/33 ,  H01L49/02

CPC分类号： H01L21/0228 ,  C23C16/405 ,  C23C16/45531 ,  H01G4/1218 ,  H01G4/33 ,  H01L28/60 ,  H01L28/75

摘要： The present disclosure relates to the deposition of conductive titanium oxide films by atomic layer deposition processes. Amorphous doped titanium oxide films are deposited by ALD processes comprising titanium oxide deposition cycles and dopant oxide deposition cycles and are subsequently annealed to produce a conductive crystalline anatase film. Doped titanium oxide films may also be deposited by first depositing a doped titanium nitride thin film by ALD processes comprising titanium nitride deposition cycles and dopant nitride deposition cycles and subsequently oxidizing the nitride film to form a doped titanium oxide film. The doped titanium oxide films may be used, for example, in capacitor structures.

公开(公告)号：US09514934B2

公开(公告)日：2016-12-06

申请号：US14658000

申请日：2015-03-13

申请人： ASM INTERNATIONAL, N.V.

发明人： Raija H. Matero ,  Linda Lindroos ,  Hessel Sprey ,  Jan Willem Maes ,  David De Roest ,  Dieter Pierreux ,  Kees Van Der Jeugd ,  Lucia D'Urzo ,  Tom E. Blomberg

IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/28 ,  H01L29/51 ,  H01L21/22

CPC分类号： H01L21/0228 ,  C23F1/26 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/2225 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517

摘要： Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.