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37 条记录 (耗时 0.027 秒)

    Electrostatically operated micro-optical devices and method for manufacturing thereof
    2.
    发明授权
    Electrostatically operated micro-optical devices and method for manufacturing thereof 有权
    静电操作的微光学器件及其制造方法

    公开(公告)号：US06996306B2

    公开(公告)日：2006-02-07

    申请号：US10646927

    申请日：2003-08-25

    申请人： Chih-Chung Chen ,  Chengkuo Lee ,  Yen-Jyh Lai ,  Wen-Chih Chen ,  Ming-Hung Tsai

    发明人： Chih-Chung Chen ,  Chengkuo Lee ,  Yen-Jyh Lai ,  Wen-Chih Chen ,  Ming-Hung Tsai

    IPC分类号： G02B6/26

    CPC分类号： G02B6/357 ,  G02B6/3514 ,  G02B6/3546 ,  G02B6/3552 ,  G02B6/358 ,  G02B6/3584 ,  G02B6/3594

    摘要： Electrostatically operated micro-optical devices and method of manufacturing such devices is disclosed. In a preferred embodiment, the micro-optical devices using electrostatic comb drive actuators having new spring designs to overcome side instability and exhibit enlarged displacement, having new designs of comb finger electrode shapes to generate larger force output, and having new clip type latch mechanism to control the corresponding device at certain states in an analog manner without electrical power consumption. Based on the proposed optical path and device configurations, integration and assembly of a plurality of reflective micro-mirrors in conjunction with proposed new comb drive actuators is very promising way to provide micro-optical devices to get good optical performance and suitable for multi-channel applications. We also disclose several process techniques to manufacture the micro-optical devices with said electrostatic comb drive actuator in a mass production manner with higher yield.

    摘要翻译： 公开了静电操作的微光学器件及其制造方法。 在优选实施例中，使用具有新弹簧设计的静电梳状驱动致动器的微型光学装置克服侧面不稳定性并展现出放大的位移，具有梳状电极形状的新设计以产生较大的力输出，并且具有新的夹式锁定机构 以模拟方式在某些状态下控制相应的设备，而无需电力消耗。 基于所提出的光路和器件配置，结合提出的新梳状驱动致动器的多个反射式微反射镜的集成和组装是提供微光学器件以获得良好的光学性能并且适合于多通道的非常有希望的方式 应用程序。 我们还公开了以大量生产方式以更高的产量制造具有所述静电梳驱动致动器的微光学装置的几种工艺技术。

    Method for manufacturing a film bulk acoustic wave filter
    3.
    发明申请
    Method for manufacturing a film bulk acoustic wave filter 审中-公开
    薄膜体声波滤波器的制造方法

    公开(公告)号：US20030000058A1

    公开(公告)日：2003-01-02

    申请号：US10126541

    申请日：2002-04-22

    申请人： ASIA PACIFIC MICROSYSTEMS, INC.

    发明人： Shu-Hui Tsai ,  Chengkuo Lee ,  Chung-Hsien Lin ,  Ju-Mei Lu

    IPC分类号： H04R017/00 ,  H05K003/02

    CPC分类号： H03H3/02 ,  Y10T29/42 ,  Y10T29/49128 ,  Y10T29/49155

    摘要： A method for manufacturing a film bulk acoustic wave filter, wherein a single-layer high-acoustic-impedance reflection layer is applied for the film bulk acoustic wave, for example, a diamond film with single-layer high-acoustic-impedance or a BCB film with single-layer low-acoustic-impedance is used as a reflection layer under the film bulk acoustic wave device in order to replace the cavity-reflective construction or the multi-layer reflection construction that are presently used; thus, there is no need for etching the cavity, the steadiness of the device and the yield of the device can be improved, and the FOM (figure of merit) of the film acoustic wave device is also improved; further, as there is no backside etching and front-side etching proceeded, the size of die is reduced greatly, so it is advantageous to mass production.

    摘要翻译： 一种制造薄膜体声波滤波器的方法，其中单层高声阻抗反射层用于薄膜体声波，例如具有单层高声阻抗的金刚石薄膜或BCB 为了代替目前使用的空腔反射结构或多层反射结构，在薄膜体声波装置的下面使用具有单层低声阻抗的膜作为反射层; 因此，不需要蚀刻空腔，可以提高器件的稳定性和器件的产量，并且还提高了膜声波器件的FOM（品质因数）; 此外，由于没有背面蚀刻和前侧蚀刻，所以模具的尺寸大大降低，因此有利于批量生产。

    CIRCUIT CARRIER BOARD
    4.
    发明公开
    CIRCUIT CARRIER BOARD 审中-公开

    公开(公告)号：US20240292517A1

    公开(公告)日：2024-08-29

    申请号：US18481097

    申请日：2023-10-04

    申请人： Asia Pacific Microsystems, Inc.

    发明人： Jer-Wei HSIEH ,  Hung-Lin YIN

    IPC分类号： H05K1/02 ,  H05K1/03 ,  H05K1/11 ,  H05K1/18

    CPC分类号： H05K1/0233 ,  H05K1/024 ,  H05K1/0306 ,  H05K1/111 ,  H05K1/184 ,  H05K2201/0183 ,  H05K2201/0206 ,  H05K2201/083

    摘要： A carrier board includes a substrate having a first substrate surface, a second substrate surface, and a substrate hole that penetrates the first substrate surface and the second substrate surface; a magnet sheath disposed in the substrate hole to cover a hole boundary of the substrate hole, and including a first magnetic surface, a second magnetic surface, and an inner periphery that interconnects the first magnetic surface and the second magnetic surface; a first dielectric isolation layer and a second dielectric isolation layer respectively having outer surfaces facing away from the substrate; and a conductive metal layer covering the inner periphery of the magnet sheath and extending to overlie the outer surfaces of the first dielectric isolation layer and the second dielectric isolation layer.

    Piezoresistive pressure sensor
    5.
    发明授权
    Piezoresistive pressure sensor 有权

    公开(公告)号：US10156489B2

    公开(公告)日：2018-12-18

    申请号：US15414956

    申请日：2017-01-25

    申请人： Asia Pacific Microsystems, Inc.

    发明人： Hung-Lin Yin ,  Cheng-Yi Chiang ,  Yu-Che Huang

    IPC分类号： G01L9/00 ,  G01L9/06

    摘要： A piezoresistive pressure sensor includes a substrate and a silicon device layer. The substrate has a cavity. The silicon device layer includes a diaphragm and a support element. A top surface of the diaphragm is connected to a top surface of the support element by one or more side surfaces. A recess of the silicon device layer is defined by the top surface of the diaphragm and the one or more side surfaces. A plurality of piezoresistive regions are on the top surface of the diaphragm, on the one or more side surfaces and on the top surface of the support element. A plurality of conductive regions are on the top surface of the support element. The plurality of conductive regions do not extend to the top surface of the diaphragm. The plurality of piezoresistive regions have a first ion dosage concentration. The plurality of conductive regions have a second ion dosage concentration. The second ion dosage concentration is greater than the first ion dosage concentration.

    PIEZORESISTIVE PRESSURE SENSOR
    6.
    发明申请
    PIEZORESISTIVE PRESSURE SENSOR 审中-公开

    公开(公告)号：US20170219449A1

    公开(公告)日：2017-08-03

    申请号：US15414956

    申请日：2017-01-25

    申请人： Asia Pacific Microsystems, Inc.

    发明人： Hung-Lin Yin ,  Cheng-Yi Chiang ,  Yu-Che Huang

    IPC分类号： G01L9/00 ,  G01L9/06

    CPC分类号： G01L9/0044 ,  G01L9/0047 ,  G01L9/0055 ,  G01L9/06

    摘要： A piezoresistive pressure sensor includes a substrate and a silicon device layer. The substrate has a cavity. The silicon device layer includes a diaphragm and a support element. A top surface of the diaphragm is connected to a top surface of the support element by one or more side surfaces. A recess of the silicon device layer is defined by the top surface of the diaphragm and the one or more side surfaces. A plurality of piezoresistive regions are on the top surface of the diaphragm, on the one or more side surfaces and on the top surface of the support element. A plurality of conductive regions are on the top surface of the support element. The plurality of conductive regions do not extend to the top surface of the diaphragm. The plurality of piezoresistive regions have a first ion dosage concentration. The plurality of conductive regions have a second ion dosage concentration. The second ion dosage concentration is greater than the first ion dosage concentration.

    Integrated MEMS device
    7.
    发明授权
    Integrated MEMS device 有权

    公开(公告)号：US09676609B2

    公开(公告)日：2017-06-13

    申请号：US15144896

    申请日：2016-05-03

    申请人： Asia Pacific Microsystems, Inc.

    发明人： Jerwei Hsieh

    IPC分类号： H01L21/4763 ,  B81B7/00 ,  B81C1/00

    CPC分类号： B81B7/0038 ,  B81B7/0058 ,  B81B2201/032 ,  B81C1/00238 ,  B81C1/00817 ,  B81C1/00825 ,  B81C2201/053 ,  B81C2201/056 ,  B81C2203/0785

    摘要： An integrated MEMS device is provided. The integrated MEMS device comprises a circuit chip and a device chip. The circuit chip has a patterned first bonding layer disposed thereon, the bonding layer being composed of a conductive material/materials. The device chip has a first structural layer and a second structural layer, the first structural layer being connected to the second structural layer and the first bonding layer of the circuit chip, and being sandwiched between the second structural layer and the circuit chip. A plurality of hermetic spaces are enclosed by the first structural layer, the second structural layer, the first bonding layer and the circuit chip.

    Method for fabricating a self-aligned vertical comb drive structure
    8.
    发明授权
    Method for fabricating a self-aligned vertical comb drive structure 有权
    用于制造自对准垂直梳驱动结构的方法

    公开(公告)号：US09382113B2

    公开(公告)日：2016-07-05

    申请号：US14070732

    申请日：2013-11-04

    申请人： Asia Pacific Microsystems, Inc.

    发明人： Jer-Wei Hsieh ,  Han-Tang Su

    IPC分类号： G02B26/08 ,  B81C1/00

    CPC分类号： B81C1/00603 ,  B81B2201/042 ,  B81B2203/0136 ,  B81C1/0015 ,  G02B26/0833

    摘要： In a method for fabricating a self-aligned vertical comb drive structure, a multi-layer structure is first formed. The multi-layer structure includes inter-digitated first and second comb structures formed via etching using a first mask layer as a mask. The first comb structure includes a plurality of first comb fingers, each having a first finger portion formed in a first device layer and a second finger portion formed in a second device layer and separated from the first finger portion by a self-aligned pattern on a stop layer. The second comb structure includes a plurality of second comb fingers formed solely in the second device layer. The second finger portions of the first comb fingers are subsequently removed.

    摘要翻译： 在制造自对准垂直梳状驱动结构的方法中，首先形成多层结构。 多层结构包括使用第一掩模层作为掩模通过蚀刻形成的经数字化的第一和第二梳状结构。 第一梳结构包括多个第一梳指，每个第一梳指具有形成在第一器件层中的第一指部和形成在第二器件层中的第二指部，并且在第一器件层上分离自对准图案 停止层。 第二梳结构包括仅在第二器件层中形成的多个第二梳指。 随后去除第一梳齿的第二手指部分。