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公开(公告)号：US20240343613A1
公开(公告)日：2024-10-17
申请号：US18133094
申请日：2023-04-11
申请人： Crystal IS, Inc.
CPC分类号： C02F1/32 , C02F1/001 , C02F9/00 , C02F2201/326 , C02F2303/04
摘要： A liquid treatment system has a liquid inlet, a liquid storage system, a filter, an inline ultraviolet (UV) reactor, and a liquid outlet. The liquid inlet receives a liquid. The filter removes a contaminant from the liquid. The inline UV reactor mitigates impurities in the liquid. The liquid storage system, the filter, and the inline UV reactor form a liquid channel between the liquid inlet and the liquid outlet. The liquid outlet is downstream from the liquid inlet. The inline UV reactor and the filter are downstream of the liquid storage system.
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公开(公告)号：US10801127B2
公开(公告)日：2020-10-13
申请号：US16395543
申请日：2019-04-26
申请人： Crystal IS, Inc.
发明人： Sandra B. Schujman , Shailaja P. Rao , Robert T. Bondokov , Kenneth E. Morgan , Glen A. Slack , Leo J. Schowalter
摘要： In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
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公开(公告)号：US10446391B2
公开(公告)日：2019-10-15
申请号：US13298570
申请日：2011-11-17
IPC分类号： H01L29/06 , H01L21/02 , H01L33/12 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/02
摘要： In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
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公开(公告)号：US10392722B2
公开(公告)日：2019-08-27
申请号：US15685127
申请日：2017-08-24
申请人： CRYSTAL IS, INC.
发明人： Robert T. Bondokov , Leo J. Schowalter , Kenneth Morgan , Glen A. Slack , Shailaja P. Rao , Shawn Robert Gibb
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ≤100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
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公开(公告)号：US10347805B2
公开(公告)日：2019-07-09
申请号：US15898347
申请日：2018-02-16
申请人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
发明人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
摘要： In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
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6.发明授权公开(公告)号：US10106913B2
公开(公告)日：2018-10-23
申请号：US15410915
申请日：2017-01-20
摘要： In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
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公开(公告)号：US09548431B2
公开(公告)日：2017-01-17
申请号：US15044577
申请日：2016-02-16
申请人： Masato Toita , Jianfeng Chen , Yuxin Li , Yuting Wang , Hironori Ishii , Ken Kitamura
发明人： Masato Toita , Jianfeng Chen , Yuxin Li , Yuting Wang , Hironori Ishii , Ken Kitamura
IPC分类号： H01L21/46 , H01L21/78 , H01L21/301 , H01L33/56 , H01L33/58 , H01L33/48 , H01L33/62 , H01L33/44 , H01L33/54
CPC分类号： A61L2/10 , H01L33/44 , H01L33/483 , H01L33/486 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/60 , H01L33/62 , H01L2224/16145 , H01L2224/48091 , H01L2924/1815 , H01L2933/005 , H01L2933/0058 , H01L2933/0066 , H01L2924/00014
摘要： In various embodiments, an illumination device features an ultraviolet (UV) light-emitting device at least partially surrounded by an encapsulant and having a rigid lens. Downward forces is applied while the encapsulant is at least partially cured to substantially prevent partial or full detachment of the rigid lens from the light-emitting device, and/or substantially suppress formation of bubbles between the light-emitting device and the rigid lens.
摘要翻译： 在各种实施例中，照明装置具有至少部分地由密封剂包围并具有刚性透镜的紫外（UV）发光装置。 施加向下的力，同时密封剂至少部分固化，以基本上防止刚性透镜从发光装置的部分或全部脱离，和/或基本上抑制在发光装置和刚性透镜之间形成气泡。
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公开(公告)号：US08222650B2
公开(公告)日：2012-07-17
申请号：US12617150
申请日：2009-11-12
申请人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
发明人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
IPC分类号： H01L27/15
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L2924/0002 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01L2924/00
摘要： Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm−2.
摘要翻译： 基于其的半导体结构和器件包括氮化铝单晶衬底和在其上外延生长的至少一层。 外延层可以包括AlN，GaN，InN或其任何二元或三元合金组合中的至少一种，并且半导体异质结构内的平均位错密度小于约106cm -2。
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公开(公告)号：US20090050050A1
公开(公告)日：2009-02-26
申请号：US12126334
申请日：2008-05-23
申请人： Glen A. Slack , Sandra B. Schujman
发明人： Glen A. Slack , Sandra B. Schujman
CPC分类号： C30B29/403 , C30B13/02 , C30B13/10
摘要： Single-crystal materials are fabricated from a melt at temperatures below their melting points.
摘要翻译： 单晶材料在低于其熔点的温度下由熔体制成。
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公开(公告)号：US20080182092A1
公开(公告)日：2008-07-31
申请号：US12015957
申请日：2008-01-17
CPC分类号： C30B23/025 , C30B23/00 , C30B29/403 , H01L21/02389 , Y10T428/2982
摘要： Bulk single crystal of aluminum nitride (AlN) having an a real planar defect density≦100 cm−2 Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
摘要翻译： 具有实际平面缺陷密度<= 100cm 2的氮化铝（AlN）的单体单晶生长单晶氮化铝的方法包括熔融铝箔以均匀地湿一层基底 铝，形成AlN种子保持器的一部分的基底，用于AlN种子用于AlN生长。 保持器可以基本上由基本上不可渗透的背板组成。
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