公开(公告)号：US07232631B2

公开(公告)日：2007-06-19

申请号：US10839772

申请日：2004-05-04

申请人： Kenichi Morimoto ,  Yoshinori Kinase ,  Yuki Aritsuka

发明人： Kenichi Morimoto ,  Yoshinori Kinase ,  Yuki Aritsuka

IPC分类号： G03F9/00

CPC分类号： G03F1/20 ,  Y10S430/143

摘要： The present invention relates to an SOI substrate as a mask substrate for the charged particle beam exposure of which a silicon oxidized film has a suitable thickness for the fabrication of a mask, a silicon membrane layer has a suitable thickness as a mask membrane and is a low stress membrane having no defects and excellent uniformity and relates to its forming method. The SOI substrate is an SOI wafer which is obtained by forming an oxidized film on a first silicon wafer, forming a separation layer by hydrogen ion implantation into the first silicon wafer via the oxidized film, bonding the first silicon wafer onto a second silicon wafer, and cleaving the first silicon wafer from the second silicon wafer at the separation layer so that a silicon membrane layer is formed on the second silicon layer via the oxidized film. The method of forming the SOI wafer is characterized by comprising a step of causing epitaxial growth of silicon to form a silicon membrane layer on said silicon membrane layer simultaneously with doping either or both of boron and phosphorus.

摘要翻译： 本发明涉及作为用于带电粒子束曝光的掩模衬底的SOI衬底，其中硅氧化膜具有用于制造掩模的合适厚度，硅膜层具有合适的厚度作为掩模膜，并且是 低应力膜没有缺陷和优异的均匀性，涉及其成型方法。 SOI衬底是通过在第一硅晶片上形成氧化膜而获得的SOI晶片，通过氧化膜将第一硅晶片通过氢离子注入形成分离层，将第一硅晶片接合到第二硅晶片上， 并且在分离层处从第二硅晶片切割第一硅晶片，使得经由氧化膜在第二硅层上形成硅膜层。 形成SOI晶片的方法的特征在于包括使硅的外延生长在掺杂硼和磷中的一种或两种的同时在所述硅膜层上形成硅膜层的步骤。