公开(公告)号：US20230073290A1

公开(公告)日：2023-03-09

申请号：US17870663

申请日：2022-07-21

申请人： FUJIMI INCORPORATED

发明人： Kohsuke TSUCHIYA ,  Hisanori TANSHO ,  Yusuke SUGA ,  Taiki ICHITSUBO ,  Takayuki TAKEMOTO ,  Naohiko SAITO ,  Michihiro KAAI

IPC分类号： C09G1/02 ,  B24B37/04

摘要： Provided is a polishing composition which contains a water-soluble polymer and is suitable for reducing LPDs. The polishing composition provided in this application includes an abrasive, a water-soluble polymer, and a basic compound. In the polishing composition, the content of a reaction product of a polymerization initiator and a polymerization inhibitor is 0.1 ppb or less of the polishing composition on a weight basis.

公开(公告)号：US20230063355A1

公开(公告)日：2023-03-02

申请号：US17975805

申请日：2022-10-28

申请人： FUJIMI INCORPORATED

发明人： Hiroyuki Oda ,  Hiroki Kon ,  Naoto Noguchi ,  Shinichiro Takami

IPC分类号： C09G1/02 ,  H01L21/304

摘要： According to the present invention, there is provided a polishing composition used for polishing a gallium compound-based semiconductor substrate. The polishing composition includes a silica abrasive; a compound Cpho having a phosphoric acid group or a phosphonic acid group; and water. In addition, according to the present invention, there is provided a method for polishing a gallium compound-based semiconductor substrate. The method includes a first polishing step in which polishing is performed using a slurry S1 containing an abrasive A1 and water; and a second polishing step in which polishing is performed using a slurry S2 containing an abrasive A2 and water, in this order. The abrasive A2 contains a silica abrasive. The slurry S2 further contains a compound Cpho having a phosphoric acid group or a phosphonic acid group. The slurry S1 does not contain the compound Cpho or a concentration [% by weight] of the compound Cpho in the slurry S1 is lower than a concentration [% by weight] of the compound Cpho in the slurry S2.

公开(公告)号：US20230027432A1

公开(公告)日：2023-01-26

申请号：US17939645

申请日：2022-09-07

申请人： FUJIMI INCORPORATED

发明人： Tsutomu YOSHINO ,  Shogo ONISHI ,  Yasuto ISHIDA

IPC分类号： C11D3/37 ,  C11D1/00 ,  C11D11/00 ,  H01L21/321 ,  B08B3/08 ,  H01L21/02 ,  H01L21/3105 ,  B08B1/00

摘要： To provide a means capable of sufficiently removing organic residues present on the surface of a polishing object after polishing containing silicon oxide or polysilicon.
A surface treatment composition contains a polymer having a constituent unit represented by Formula (1) below and water and is used for treating the surface of a polishing object after polishing, in which, in Formula (1) above, R1 is a hydrocarbon group having 1 to 5 carbon atoms and R2 is a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms.

公开(公告)号：US20220372330A1

公开(公告)日：2022-11-24

申请号：US17729672

申请日：2022-04-26

申请人： FUJIMI INCORPORATED

发明人： Masashi Abe ,  Toshio Shinoda ,  Satoshi Ishiguro ,  Satoru Yarita

IPC分类号： C09G1/02 ,  C01B33/141

摘要： The method for producing a polishing composition according to the present invention includes mixing a dispersion containing silica and a solution containing a silane coupling agent having a cationic group at a concentration of 0.03% by mass or more and less than 1% by mass to obtain a dispersion containing cationically modified silica.

公开(公告)号：US11498182B2

公开(公告)日：2022-11-15

申请号：US16074668

申请日：2017-02-20

申请人： FUJIMI INCORPORATED

发明人： Toru Kamada ,  Koji Katayama ,  Hitoshi Morinaga ,  Takashi Horibe

IPC分类号： B24B37/22 ,  B24B29/00 ,  B24B37/24 ,  B24D13/14 ,  B24B19/26 ,  B24B29/02 ,  B24B37/26

摘要： A disc-shaped polishing pad (1) is used for a polishing method of the present invention. The polishing pad (1) has a peripheral surface (111) on a polishing surface (10) side in an axial direction of the disc of a tapered surface whose diameter is reduced to the polishing surface (10). An angle formed by the peripheral surface (111) and the polishing surface (10) is 125° or more and less than 180°. The polishing pad (1) has a hardness immediately after a pressing surface is in close contact of 40 or more by a testing method specified in an appendix 2 of JIS K7312: 1996, “Spring Hardness Test Type C Testing Method”. A slurry containing abrasives is supplied to a polished surface larger than the polishing surface (10). The polishing surface (10) is pressed against the polished surface and the polishing pad (1) is moved to polish the polished surface.

公开(公告)号：US20220306900A1

公开(公告)日：2022-09-29

申请号：US17700840

申请日：2022-03-22

申请人： FUJIMI INCORPORATED

发明人： Ryota Mae

IPC分类号： C09G1/02

摘要： Provided is a polishing composition capable of polishing an object to be polished containing polycrystalline silicon doped with an n-type impurity at a high polishing speed.
The polishing composition contains abrasive grains and a dispersing medium, wherein: the abrasive grains contain first silica particles having a silanol group density of higher than 0 group/nm2 and 4 groups/nm2 or less and second silica particles having a silanol group density of higher than 4 groups/nm2 and 12 groups/nm2 or less; and the pH is higher than 6.

公开(公告)号：US11446784B2

公开(公告)日：2022-09-20

申请号：US16412562

申请日：2019-05-15

申请人： EBARA CORPORATION ,  FUJIMI INCORPORATED

发明人： Yu Ishii ,  Kenya Ito ,  Hitoshi Morinaga ,  Kazusei Tamai ,  Shingo Ohtsuki ,  Hiroshi Asano

IPC分类号： B24B9/06 ,  B24B5/04 ,  B24B19/08 ,  B24B37/005 ,  B24B37/04 ,  B24B49/00 ,  B24B9/10 ,  B24B5/36 ,  B24B37/10 ,  B24B37/24 ,  B24B37/30

摘要： The present invention relates to a chemical mechanical polishing (CMP) apparatus for polishing a workpiece, such as a metal body, to a mirror finish. The chemical mechanical polishing apparatus includes: a polishing pad (2) having an annular polishing surface (2a) which has a curved vertical cross-section; a workpiece holder (11) for holding a workpiece (W) having a polygonal shape; a rotating device (15) configured to rotate the workpiece holder (11) about an axis of the workpiece (W); a pressing device (14) configured to press a periphery of the workpiece (W) against the annular polishing surface (2a); and an operation controller (25) configured to change a speed at which the rotating device (15) rotates the workpiece (W) according to a rotation angle of the workpiece (W). The pressing device (14) is disposed more inwardly than the workpiece holder (11) in a radial direction of the polishing table (3).

公开(公告)号：US11434391B2

公开(公告)日：2022-09-06

申请号：US16579162

申请日：2019-09-23

申请人： FUJIMI INCORPORATED

发明人： Jingzhi Chen

IPC分类号： C09G1/02 ,  B24B37/04

摘要： Provided are a polishing composition capable of effectively reducing or eliminating a step difference on a surface of an object to be polished consisting of a single material, a method of using such a polishing composition, and a method of producing a substrate.
The polishing composition of the present invention contains an abrasive grain, a pH adjusting agent, a dispersing medium, and at least one kind of first water-soluble polymer having a lactam structure and at least one kind of second water-soluble polymer containing an alkylene oxide represented by the following Formula (I) in the structure, CxH2xOn  (I) (in the Formula (I), X is an integer of 3 or more and n is an integer of 2 or more.).

公开(公告)号：US20220186078A1

公开(公告)日：2022-06-16

申请号：US17442712

申请日：2020-03-25

申请人： FUJIMI INCORPORATED

发明人： Kohsuke TSUCHIYA ,  Maki ASADA ,  Taiki ICHITSUBO

IPC分类号： C09G1/02 ,  C09K3/14

摘要： Provided is a polishing composition having excellent capability of reducing haze on the surface of an object to be polished. The polishing composition provided by the present invention includes an abrasive, a basic compound, a water-soluble polymer, and water. The water-soluble polymer includes at least a water-soluble polymer P1 and a water-soluble polymer P2. Here, the water-soluble polymer P1 is an acetalized polyvinyl alcohol-based polymer, and the water-soluble polymer P2 is a water-soluble polymer other than the acetalized polyvinyl alcohol-based polymer.

公开(公告)号：US20220186077A1

公开(公告)日：2022-06-16

申请号：US17441587

申请日：2020-01-30

申请人： FUJIMI INCORPORATED

发明人： Kohsuke TSUCHIYA ,  Maki ASADA ,  Satoshi MOMOTA

IPC分类号： C09G1/02 ,  H01L21/306

摘要： The present invention provides means capable of achieving both a reduction in the number of defects and a reduction in haze in an object to be polished after polishing at a high level in a method of polishing the object to be polished containing a material having a silicon-silicon bond. The present invention relates to a method of polishing an object to be polished containing a material having a silicon-silicon bond, and the polishing method includes a final polishing step Pf. In this polishing method, the final polishing step Pf has a plurality of polishing sub-steps, the plurality of polishing sub-steps are continuously performed on the same polishing platen, a final polishing sub-step in the plurality of polishing sub-steps is a polishing sub-step Pff of polishing using a polishing composition Sff, a polishing sub-step provided before the polishing sub-step Pff in the plurality of polishing sub-steps is a polishing sub-step Pfp of polishing using a polishing composition Sfp, and the polishing composition Sff satisfies at least one of the following condition (A) or the following condition (B): condition (A): a value of a haze parameter of the polishing composition Sff obtained in a standard test 1 is smaller than a value of the haze parameter of the polishing composition Sfp obtained in the standard test 1, and condition (B): the polishing composition Sff contains an abrasive Aff, a basic compound Bff, and hydroxyethyl cellulose.