Abstract:
Biomarkers for liver diseases and method for using the same are provided. For detecting liver cirrhosis and liver cancer, the biomarkers are selected from any one of the amino acid sequences with SEQ ID NO:1 to SEQ ID NO:24 or derivatives or fragments or variants or the combination thereof or the antibodies against the amino acid sequences. Then the biomarkers are further developed into detection kits, such that by detecting the existence of autoantibodies or autoantigens in screened specimens, liver diseases are detected with higher accuracy and sensitivity.
Abstract translation:提供肝脏疾病的生物标志物及其使用方法。 为了检测肝硬化和肝癌,生物标志物选自SEQ ID NO:1至SEQ ID NO:24的任一氨基酸序列或衍生物或片段或变体或其组合或针对氨基酸序列的抗体 。 然后生物标志物进一步发展为检测试剂盒,通过检测筛选标本中自身抗体或自身抗原的存在,以更高的准确度和灵敏度检测肝脏疾病。
Abstract:
An all-oxide transistor structure includes a substrate, a first transistor, a second transistor, a third transistor and a fourth transistor. The substrate has an upper surface. The first transistor is disposed on the upper surface of the substrate. The second transistor is disposed on the upper surface of the substrate, wherein the second transistor is electrically connected to the first transistor. The third transistor is electrically connected to the second transistor and overlapped with the second transistor in a first direction, wherein the first direction is parallel to a normal direction of the upper surface of the substrate. The fourth transistor is disposed on the upper surface of the substrate, wherein the fourth transistor is electrically connected to the first transistor, the second transistor and the third transistor.
Abstract:
A power amplifier comprising a first transistor pair and a first odd mode resistor string. The first transistor pair has a first transistor and a second transistor. A first end of the first transistor is symmetrically disposed to a first end of the second transistor. A plurality of first odd mode resistors are serially coupled between the first end of the first transistor and the first end of the second transistor. A total length of the first odd mode resistor string is substantially equal to a distance between the first end of the first transistor and the first end of the second transistor.
Abstract:
A method for removing inorganic substances from wastewater is provided. The method includes: providing a fluidized bed reactor, wherein carriers are added into the fluidized bed reactor, and the carriers includes polyvinylidene fluoride (PVDF), ethylene tetrafluoroethylene (ETFE), alumina (Al2O3) with purity more than 95 wt %, or combinations thereof; introducing the wastewater containing the inorganic substances and a first reagent into the fluidized bed reactor; fluidizing the carriers in the fluidized bed reactor, and making the inorganic substances in the wastewater reacting with the first reagent to form crystals, wherein the crystals are formed on the outer surfaces of the carriers.
Abstract:
A data feature augmentation system and method for a low-precision neural network are provided. The data feature augmentation system includes a first time difference unit. The first time difference unit includes a first sample-and-hold circuit and a subtractor. The first sample-and-hold circuit is used for receiving an input signal and obtaining a first signal according to the input signal. The first signal is related to a first leakage rate of the first sample-and-hold circuit and the first signal is the signal generated by delaying the input signal by one time unit. The subtractor is used for performing subtraction on the input signal and the first signal to obtain a time difference signal. The input signal and the time difference signal are inputted to the low-precision neural network.
Abstract:
A light field display module including a light field display layer, an adjustment layer, and an image forming layer is provided. The light field display layer is configured to form a light field image beam. The adjustment layer is disposed on a path of the light field image beam, and configured to adjust the light field image beam. The image forming layer is disposed on the path of the light field image beam from the adjustment layer, and configured to change a position of a light field image by changing a direction of the light field image beam. The image forming layer has multiple optical micro-structures.
Abstract:
A foam is provided. The foam includes a foaming material and a plurality of cells arranged within the foaming material. The foaming material is prepared from a composition, which includes 0.01-2.0 parts by weight of a flow aid and 100 parts by weight of a block copolymer. The block copolymer includes a first block, a second block, and a linking moiety. The first block is connected to the second block via the linking moiety. The first block is an aromatic polyester block. The second block is an aliphatic polyether block, an aliphatic polyester block, or an aliphatic polycarbonate block. The linking moiety is a residue of a dehydrogenated polyol.
Abstract:
A computer-assisted needle insertion method is provided. The computer-assisted needle insertion method includes the following steps. A first machine learning model and a second machine learning model are obtained. A computed tomography image and a needle insertion path are obtained, a suggested needle insertion path is generated according to the first machine learning model, the computed tomography image, and the needle insertion path, and the needle is instructed to approach a needle insertion point on a skin of a target. The needle insertion point is located on the suggested needle insertion path. A breath signal of the target is obtained, and whether a future breath state of the target is normal is estimated according to the second machine learning model and the breath signal. A suggested needle insertion period is output according to the breath signal in response to determining that the future breath state is normal.
Abstract:
A semiconductor structure including a substrate, a conductive layer, and a semiconductor device is provided. The substrate includes a first surface, a second surface opposite to the first surface, at least one insulating vacancy extending from the first surface toward the second surface, and a through hole passing through the substrate. The conductive layer fills in the through hole. The semiconductor device is disposed on the second surface and is electrically connected to the conductive layer, and the at least one insulating vacancy is distributed corresponding to the semiconductor device.
Abstract:
A flexible hybrid electronic substrate and electronic textile including the same are provided. The flexible hybrid electronic substrate includes a first region and a second region. There is a joint between the first region and the second region. Each of the first region and the second region includes at least one selected from the group consisting of the following structure features: multilayer structure feature, anisotropic structure feature and pre-strained structure feature.